Band structure analysis of the conduction-band mass anisotropy in 6H and 4H SiC
, 1995 The band structures of 6H and 4H SiC calculated by means of the FP-LMTO method are used to determine the effective mass tensors for their conduction-band minima.
Benjamin Segall +8 more
core +1 more source
Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers [PDF]
, 2011 Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers are investigated. The authors reported that the carrier lifetime in n-type epilayers increased by reduction of deep levels through thermal ...
Asano, K. +3 more
core +1 more source
The Principles of Social Order. Selected Essays of Lon L. Fuller, edited With an introduction by Kenneth I. Winston [PDF]
, 1983 The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined.
Abrikosov, Igor +8 more
core +2 more sources
Enhancing Electrical and Interfacial Properties of BeO/4H‐SiC Structures with SiO2 Interlayer
Advanced Electronic MaterialsBeryllium oxide (BeO) has exceptionally high thermal conductivity (330 W m−1·K−1), a large bandgap energy, and a high dielectric constant, making it an optimal dielectric for high‐power devices.
Sangoh Han +7 more
doaj +1 more source
Estimation of power dissipation of a 4H-SiC Schottky barrier diode with a linearly graded doping profile in the drift region [PDF]
, 2009 The aim of this paper is to establish the importance of a linearly graded profile in the drift region of a 4H-SiC Schottky barrier diode (SBD). The power dissipation of the device is found to be considerably lower at any given current density as compared
Rajneesh Talwar
core
Effect of Boron Incorporation on Slow Interface Traps in SiO2/4H-SiC Structures [PDF]
, 2017 The reason for the effective removal of interface traps in SiO2/4H-SiC (0001) structures by boron (B) incorporation was investigated by employing low-temperature electrical measurements.
HARADA Shinsuke +7 more
core +2 more sources
Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy [PDF]
, 2015 We show that "single" stacking fault 3C inclusions formed in 4H-SiC p-i-n diodes behave as electron quantum wells (QWs) with the QW energy depth of ???0.25 eV below 4H-SiC conduction band minimum, by measuring the Schottky barriers on and away ...
Carter C. H. +5 more
core +1 more source
Micromachines, 2020 In this paper, the chemical vapor deposition (CVD) processing for 4H-SiC epilayer is investigated with particular emphasis on the defects and the noise properties.
Jinlan Li +6 more
doaj +1 more source
Modeling of the photoelectronic characteristics of a new 4H-SiC avalanche photodiode [PDF]
, 2015 紫外波段的光电探测器广泛应用于火箭发射、导弹跟踪、火焰探测、紫外通信以及紫外辐射测量等领域，具有很高的应用价值。采用4H-SiC半导体材料制备的紫外光电探测器具有低漏电流、高的量子效率、紫外可见抑制比高、抗辐射和耐高温等优点，是目前最具应用前景的紫外光电探测器。国内外多个课题组都对4H-SiC基紫外光电探测器进行了研究，成功制备出了多种结构的性能优越的4H-SiC紫外光电探测器，并在继续探索新结构的性能更优越的光电探测器。 本文基于传统的PIN结构和吸收-倍增-分离(SAM)结构的4H ...
钟金祥
core
Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) [PDF]
, 2009 Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a ...
Chen Z. +8 more
core +4 more sources