Results 1 to 10 of about 261,592 (260)

Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation

Advanced Materials Interfaces, 2023
High‐efficiency and low‐loss processing is the mainstay to reduce the cost and deepen the application of 4H silicon carbide (4H‐SiC) wafers in high‐power and high‐frequency electronics.
Wenhao Geng, Qinqin Shao, Yan Pei, Lingbo Xu, Can Cui, Xiaodong Pi, Deren Yang, Rong Wang   +7 more
doaj   +2 more sources

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Scientific Reports, 2022
4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar ...
Masashi Kato, Ohga Watanabe, Toshiki Mii, Hitoshi Sakane, Shunta Harada   +4 more
doaj   +2 more sources

Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review [PDF]

Energies, 2019
This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs).
P. Fiorenza, F. Giannazzo, F. Roccaforte
semanticscholar   +3 more sources

Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC

Micromachines, 2021
Single-crystal 4H-SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. A novel polishing technique that combines plasma electrolytic processing and mechanical polishing (PEP-MP)
Gaoling Ma, Shujuan Li, Xu Liu, Xincheng Yin, Zhen Jia, Feilong Liu   +5 more
doaj   +2 more sources

Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser

Crystals, 2022
The physical properties of silicon carbide (SiC) are excellent as a third-generation semiconductor. Nevertheless, diamond wire cutting has many drawbacks, including high loss, long cutting time and prolonged processing time.
Hanwen Wang, Qiu Chen, Yongping Yao, Linlin Che, Baitao Zhang, Hongkun Nie, Rongkun Wang   +6 more
doaj   +2 more sources

Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation [PDF]

Nanomaterials, 2023
Silicon carbide (SiC) is a promising material for thermoelectric power generation. The characterization of thermal transport properties is essential to understanding their applications in thermoelectric devices.
Kaili Yin, Liping Shi, Xiaoliang Ma, Yesheng Zhong, Mingwei Li, Xiaodong He   +5 more
doaj   +2 more sources

Theoretical study of the band structure of 2H-SiC and 4H-SiC of silicon carbide polytypes

Condensed Matter Physics, 2021
We have studied the electronic band properties of 2H-SiC and 4H-SiC silicon carbide polytypes. The structures of the electronic bands and density of state (DOS) using ab initio Density Functional Theory (DFT) were calculated for the first Brillouin zone ...
A. V. Sinelnik, A. V. Semenov
doaj   +2 more sources

Timing Performance Simulation for 3D 4H-SiC Detector [PDF]

Micromachines, 2021
To meet the high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. Three-dimensional 4H-SiC detectors could potentially operate in a harsh radiation and room-temperature environment because of ...
Yuhang Tan, Tao Yang, Kai Liu, Congcong Wang, Xiyuan Zhang, Mei Zhao, Xiaochuan Xia, Hongwei Liang, Ruiliang Xu, Yu Zhao, Xiaoshen Kang, Chenxi Fu, Weimin Song, Zhenzhong Zhang, Ruirui Fan, Xinbo Zou, Xin Shi   +16 more
doaj   +4 more sources

Mechanism of Tailoring Laser-Induced Periodic Surface Structures on 4H-SiC Crystal Using Ultrashort-Pulse Laser [PDF]

Nanomaterials
In this study, we examine the characteristics of laser-induced periodic surface structures (LIPSSs) fabricated on N-doped 4H-SiC (N-SiC) and high-purity 4H-SiC (HP-SiC) crystals using femtosecond–picosecond lasers. The effects of various laser parameters
Erxi Wang, Chong Shan, Xiaohui Zhao, Huamin Kou, Qinghui Wu, Dapeng Jiang, Xing Peng, Penghao Xu, Zhan Sui, Yanqi Gao   +9 more
doaj   +2 more sources

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

Micromachines, 2020
Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article.
Krishna C. Mandal, Joshua W. Kleppinger, Sandeep K. Chaudhuri   +2 more
doaj   +2 more sources