Results 171 to 180 of about 261,592 (260)

Temperature-dependent Hall mobility in heavily Al-doped 4H-SiC grown by chemical vapor deposition

Atsuki Hidaka, Yuuta Tokai, Tetsuo Narita, Hideharu Matsuura, Kazuma Eto, Shiyang Ji, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida   +8 more
openalex   +1 more source

Step-flow growth of nanolaminate Ti3SiC2 epitaxial layers on 4H-SiC(0 0 0 1)

, 2011
Kristina Buchholt, Per Eklund, J. Jensen, Jun Lu, Anita Lloyd Spetz, Lars Hultman   +5 more
openalex   +2 more sources

Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics. [PDF]

Nanomaterials (Basel)
Wang P, Li C, Deng C, Yang Q, Xu S, Tang X, Wang Z, Tao W, Tao N, Wang Q, Yu H.   +10 more
europepmc   +1 more source

Effects of High-Temperature Treatments in Inert Atmosphere on 4H-SiC Substrates and Epitaxial Layers. [PDF]

Materials (Basel)
Migliore F, Cannas M, Gelardi FM, Pasquali F, Brischetto A, Vecchio D, Pirnaci MD, Agnello S.   +7 more
europepmc   +1 more source

About the Nature of Recombination Current in 4H-SiC pn Structures

, 2006
Anatoly M. Strel’chuk, A.V. Mashichev, A.A. Lebedev, A.N. Volkova, Konstantinos Zekentes   +4 more
openalex   +1 more source

1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance. [PDF]

Micromachines (Basel)
Li M, Qiu Z, Li T, Kang Y, Lu S, Hu X.
europepmc   +1 more source

Surface Modification and Crystal Quality Improvement of 4H-SiC Film via Laser Treatment: Comparison of Continuous Wave and Femtosecond Pulse Laser. [PDF]

Materials (Basel)
Han X, Zhou J, Li R, Wang S, Dong F, Sun C, Liu S.   +6 more
europepmc   +1 more source

Robust single modified divacancy color centers in 4H-SiC under resonant excitation. [PDF]

Nat Commun
He ZX, Zhou JY, Li Q, Lin WX, Liang RJ, Wang JF, Wen XL, Hao ZH, Liu W, Ren S, Li H, You LX, Zhang RJ, Zhang F, Tang JS, Xu JS, Li CF, Guo GC.   +17 more
europepmc   +1 more source

Effects of Al ion implantation to 4H-SiC on the specific contact resistance of TiAl-based contact materials

, 2006
Kazuhiro Ito, Susumu Tsukimoto, Masanori Murakami   +2 more
openalex   +1 more source

A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q_gd and R_on. [PDF]

Micromachines (Basel)
Cui W, Guo J, Xu H, Zhang DW.
europepmc   +1 more source