Results 11 to 20 of about 19,738 (219)

Timing Performance Simulation for 3D 4H-SiC Detector [PDF]

Micromachines, 2021
To meet the high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. Three-dimensional 4H-SiC detectors could potentially operate in a harsh radiation and room-temperature environment because of ...
Yuhang Tan, Tao Yang, Kai Liu, Congcong Wang, Xiyuan Zhang, Mei Zhao, Xiaochuan Xia, Hongwei Liang, Ruiliang Xu, Yu Zhao, Xiaoshen Kang, Chenxi Fu, Weimin Song, Zhenzhong Zhang, Ruirui Fan, Xinbo Zou, Xin Shi   +16 more
doaj   +4 more sources

Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation [PDF]

Nanomaterials, 2023
Silicon carbide (SiC) is a promising material for thermoelectric power generation. The characterization of thermal transport properties is essential to understanding their applications in thermoelectric devices.
Kaili Yin, Liping Shi, Xiaoliang Ma, Yesheng Zhong, Mingwei Li, Xiaodong He   +5 more
doaj   +2 more sources

Mechanism of Tailoring Laser-Induced Periodic Surface Structures on 4H-SiC Crystal Using Ultrashort-Pulse Laser [PDF]

Nanomaterials
In this study, we examine the characteristics of laser-induced periodic surface structures (LIPSSs) fabricated on N-doped 4H-SiC (N-SiC) and high-purity 4H-SiC (HP-SiC) crystals using femtosecond–picosecond lasers. The effects of various laser parameters
Erxi Wang, Chong Shan, Xiaohui Zhao, Huamin Kou, Qinghui Wu, Dapeng Jiang, Xing Peng, Penghao Xu, Zhan Sui, Yanqi Gao   +9 more
doaj   +2 more sources

Sodium diffusion in 4H-SiC [PDF]

APL Materials, 2014
Sodium diffusion has been studied in p-type 4H-SiC. Heat treatments have been performed from 1200 °C to 1800 °C for 1 min to 4 h. Secondary ion mass spectrometry has been used to measure the sodium distribution.
M. K. Linnarsson, A. Hallén
doaj   +2 more sources

Dislocation-related leakage-current paths of 4H silicon carbide

Frontiers in Materials, 2023
Improving the quality of 4H silicon carbide (4H-SiC) epitaxial layers to reduce the leakage current of 4H-SiC based high-power devices is a long-standing issue in the development of 4H-SiC homoepitaxy.
Wandong Gao, Wandong Gao, Guang Yang, Yixiao Qian, Yixiao Qian, Xuefeng Han, Xuefeng Han, Can Cui, Xiaodong Pi, Xiaodong Pi, Deren Yang, Deren Yang, Rong Wang, Rong Wang   +13 more
doaj   +1 more source

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Scientific Reports, 2022
4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar ...
Masashi Kato, Ohga Watanabe, Toshiki Mii, Hitoshi Sakane, Shunta Harada   +4 more
doaj   +1 more source

Analysis of carrier recombination coefficients of 3C- and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC

AIP Advances, 2023
In recent years, 4H-SiC power devices have been widely employed in power electronic systems owing to their superior performance to Si power devices. However, stacking faults in 4H-SiC can degrade the device performance.
Kazuhiro Tanaka, Masashi Kato
doaj   +1 more source

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Advanced Materials Interfaces, 2023
4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones.
Wantang Wang, Xuesong Lu, Xinke Wu, Yiqiang Zhang, Rong Wang, Deren Yang, Xiaodong Pi   +6 more
doaj   +1 more source

Theoretical study of the band structure of 2H-SiC and 4H-SiC of silicon carbide polytypes

Condensed Matter Physics, 2021
We have studied the electronic band properties of 2H-SiC and 4H-SiC silicon carbide polytypes. The structures of the electronic bands and density of state (DOS) using ab initio Density Functional Theory (DFT) were calculated for the first Brillouin zone ...
A. V. Sinelnik, A. V. Semenov
doaj   +1 more source

Modified divacancies in 4H-SiC

Journal of Applied Physics, 2022
Divacancies near or at lattice defects in SiC, the PL5–PL7 photoluminescence centers, are known to have more favorable optical and spin properties for applications in quantum technology compared to the usual divacancies. These centers were previously predicted to be divacancies near stacking faults. Using electron paramagnetic resonance, we observe PL5,
N. T. Son, D. Shafizadeh, T. Ohshima, I. G. Ivanov   +3 more
openaire   +1 more source