Results 11 to 20 of about 261,592 (260)

Sodium diffusion in 4H-SiC [PDF]

APL Materials, 2014
Sodium diffusion has been studied in p-type 4H-SiC. Heat treatments have been performed from 1200 °C to 1800 °C for 1 min to 4 h. Secondary ion mass spectrometry has been used to measure the sodium distribution.
M. K. Linnarsson, A. Hallén
doaj   +2 more sources

Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments

Microsystems & Nanoengineering, 2023
Microelectromechanical system (MEMS) pressure sensors based on silicon are widely used and offer the benefits of miniaturization and high precision. However, they cannot easily withstand high temperatures exceeding 150 °C because of intrinsic material ...
Chen Wu, Xudong Fang, Q. Kang, Z. Fang, Junxia Wu, Hongtao He, Dong Zhang, Libo Zhao, B. Tian, Ryuta Maeda, Zhuangde Jiang   +10 more
semanticscholar   +1 more source

Ultra-Stable and Durable Piezoelectric Nanogenerator with All-Weather Service Capability Based on N Doped 4H-SiC Nanohole Arrays

Nano-Micro Letters, 2021
An ultra-stable all-weather service piezoelectric nanogenerator (PENG) with a wide operating temperature range (-80~80 ℃) and a wide operating relative humidity range (0~100%) is proposed.
Linlin Zhou, Laipan Zhu, Tao Yang, X. Hou, Zhengtao Du, Sheng Cao, Hailong Wang, K. Chou, Zhong Lin Wang   +8 more
semanticscholar   +1 more source

Dislocation-related leakage-current paths of 4H silicon carbide

Frontiers in Materials, 2023
Improving the quality of 4H silicon carbide (4H-SiC) epitaxial layers to reduce the leakage current of 4H-SiC based high-power devices is a long-standing issue in the development of 4H-SiC homoepitaxy.
Wandong Gao, Wandong Gao, Guang Yang, Yixiao Qian, Yixiao Qian, Xuefeng Han, Xuefeng Han, Can Cui, Xiaodong Pi, Xiaodong Pi, Deren Yang, Deren Yang, Rong Wang, Rong Wang   +13 more
doaj   +1 more source

Investigation of the Anisotropy of 4H-SiC Materials in Nanoindentation and Scratch Experiments

Materials, 2022
Silicon carbide is an ideal material for advanced electronics, military, and aerospace applications due to its superior physical and chemical properties.
Suhua Shi, Yiqing Yu, Ningchang Wang, Yong Zhang, Weibin Shi, Xinjiang Liao, Nian Duan   +6 more
semanticscholar   +1 more source

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

Electronics, 2022
In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes (SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other semiconductor devices such as PiN diodes or metal-oxide-semiconductor (MOS ...
I. Capan
semanticscholar   +1 more source

Analysis of carrier recombination coefficients of 3C- and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC

AIP Advances, 2023
In recent years, 4H-SiC power devices have been widely employed in power electronic systems owing to their superior performance to Si power devices. However, stacking faults in 4H-SiC can degrade the device performance.
Kazuhiro Tanaka, Masashi Kato
doaj   +1 more source

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Advanced Materials Interfaces, 2023
4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones.
Wantang Wang, Xuesong Lu, Xinke Wu, Yiqiang Zhang, Rong Wang, Deren Yang, Xiaodong Pi   +6 more
doaj   +1 more source

Modified divacancies in 4H-SiC

Journal of Applied Physics, 2022
Divacancies near or at lattice defects in SiC, the PL5–PL7 photoluminescence centers, are known to have more favorable optical and spin properties for applications in quantum technology compared to the usual divacancies. These centers were previously predicted to be divacancies near stacking faults. Using electron paramagnetic resonance, we observe PL5,
N. T. Son, D. Shafizadeh, T. Ohshima, I. G. Ivanov   +3 more
openaire   +1 more source

Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation

Scientific Reports, 2022
SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage ...
S. Harada, T. Mii, Hitoshi Sakane, M. Kato   +3 more
semanticscholar   +1 more source