Results 201 to 210 of about 261,592 (260)

Fabrication and characterization of CuAlO2/ 4H–SiC heterostructure on 4H–SiC (0001)

Superlattices and Microstructures, 2021
Abstract In this work, CuAlO2 films were prepared on 4H–SiC (0001) using the sol-gel method. The surface morphology, structure and optical characteristics of the prepared films were studied. A homogeneous distribution of fine rhombohedral crystal structural grains is observed on the 4H–SiC substrate using scanning electron microscope (SEM).
Jichao Hu, Dan Li, Xiaomin He, Xi Wang, Bei Xu, Yuan Zang, Lianbi Li   +6 more
openaire   +1 more source

Compensation of p-type doping in Al-doped 4H-SiC

Journal of Applied Physics, 2022
One of the major challenges of 4H-silicon carbide (4H-SiC) is that the preparation of low resistivity p-type 4H-SiC single crystals lags seriously behind that of low resistivity n-type 4H-SiC single crystals, hindering the development of important 4H-SiC
Yuanchao Huang, Rong Wang, Yiqiang Zhang, Deren Yang, X. Pi   +4 more
semanticscholar   +1 more source

Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits

Social Science Research Network, 2022
Discrimination of dislocations is critical to the statistics of dislocation densities in 4H silicon carbide (4H-SiC), which are routinely used to evaluate the quality of 4H-SiC single crystals and homoepitaxial layers.
Guang Yang, Haokun Luo, Jiajun Li, Qinqin Shao, Yazhe Wang, Ruzhong Zhu, Xi Zhang, Lihui Song, Yiqiang Zhang, Lingbo Xu, C. Cui, X. Pi, Deren Yang, Rong Wang   +13 more
semanticscholar   +1 more source

Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching

Journal of Semiconductors, 2022
In this work, we propose to reveal the subsurface damage (SSD) of 4H-SiC wafers by photo-chemical etching and identify the nature of SSD by molten-alkali etching. Under UV illumination, SSD acts as a photoluminescence-black defect.
Wenhao Geng, Guangyi Yang, Xuqing Zhang, Xi Zhang, Yazhe Wang, Lihui Song, Peng Chen, Yiqiang Zhang, X. Pi, Deren Yang, Rong Wang   +10 more
semanticscholar   +1 more source

Anisotropic deformation of 4H-SiC wafers: insights from nanoindentation tests

Journal of Physics D: Applied Physics, 2022
In this work, the anisotropic deformation and anisotropic mechanical properties of 4H silicon carbide (4H-SiC) single crystal wafers are proposed by using nanoindentation. The C face of a 4H-SiC wafer has higher hardness and lower fracture toughness than
Xiaoshuang Liu, Rong Wang, Junran Zhang, Yunhao Lu, Yiqiang Zhang, Deren Yang, X. Pi   +6 more
semanticscholar   +1 more source

Doping-dependent nucleation of basal plane dislocations in 4H-SiC

Journal of Physics D: Applied Physics, 2022
Basal plane dislocations (BPDs) are one of the most harmful dislocations in 4H silicon carbide (4H-SiC). Understanding the nucleation of BPDs is the basis of reducing the density of BPDs in 4H-SiC. In this work, we investigate the nucleation mechanism of
Xiaoshuang Liu, Rong Wang, Junran Zhang, Yunhao Lu, Yiqiang Zhang, Deren Yang, X. Pi   +6 more
semanticscholar   +1 more source

Analysis of Mobility for 4H-SiC N/P-Channel MOSFETs Up To 300 °C

IEEE Transactions on Electron Devices, 2021
The ${I}$ – ${V}$ characteristics of 4H-SiC N/P-channel MOSFETs have been carried out at high temperatures up to 300 °C. Different scattering mechanisms of surface mobility for 4H-SiC N-channel MOSFETs have been studied in this article.
Liao Yang, Yun Bai, Chengzhan Li, Hong Chen, Zhonglin Han, Yidan Tang, J. Hao, Chengyue Yang, Xiaoli Tian, Jiang Lu, Xinyu Liu   +10 more
semanticscholar   +1 more source

Divacancy in 4H-SiC

Physical Review Letters, 2006
Electron paramagnetic resonance and ab initio supercell calculations suggest that the P6/P7 centers, which were previously assigned to the photoexcited triplet states of the carbon vacancy-antisite pairs in the double positive charge state, are related to the triplet ground states of the neutral divacancy. The spin density is found to be located mainly
N T, Son, P, Carlsson, J, ul Hassan, E, Janzén, T, Umeda, J, Isoya, A, Gali, M, Bockstedte, N, Morishita, T, Ohshima, H, Itoh   +10 more
openaire   +2 more sources

Two-Step Chemical Mechanical Polishing of 4H-SiC (0001) Wafer

ECS Journal of Solid State Science and Technology, 2021
Chemical mechanical polishing (CMP), as a widely used global smoothing technique, requires a high polishing rate and a low surface roughness. However, it is difficult to meet these requirements with single-step polishing. To obtain a perfect 4H-SiC wafer
Weilei Wang, Weili Liu, Zhitang Song
semanticscholar   +1 more source

Helium implantation into 4H‐SiC

physica status solidi (a), 2009
AbstractThe paper provides the properties of single crystalline 4H‐SiC under helium implantation at temperatures of implantation up to 750 °C and fluences in the range 5 × 1015–1 × 1017 cm−2. The microstructure evolution was studied by transmission electron microscopy cross‐section and X‐ray diffraction experiments. The mechanical property changes were
Barbot, J-F., Leclerc, S., David, M.-L., Oliviero, E., Montsouka, R., Pailloux, F., Eyidi, D., F. Denanot, M., Beaufort, M.F., Declémy, A., Audurier, V., Tromas, C.   +11 more
openaire   +2 more sources