Results 51 to 60 of about 261,592 (260)

Applications of 4H Silicon Carbide Radiation Detectors in Fission and Fusion Reactor Environments [PDF]

EPJ Web of Conferences
Semiconductor radiation detectors based on the 4H polytype of Silicon Carbide (4H-SiC) have many advantages for high-temperature, high-radiation and mixed-radiation applications.
Ruddy Frank H., Lyoussi Abdallah, Destouches Christophe, Ottaviani Laurent, Reynard-Carette Christelle, Llido Olivier   +5 more
doaj   +1 more source

Surface defects in 4H-SiC homoepitaxial layers

Nanotechnology and Precision Engineering, 2020
Although a high-quality homoepitaxial layer of 4H‑silicon carbide (4H-SiC) can be obtained on a 4° off-axis substrate using chemical vapor deposition, the reduction of defects is still a focus of research.
Lixia Zhao
doaj   +1 more source

Ion implantation in 4H–SiC

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2008
Abstract Silicon carbide offers unique applications as a wide bandgap semiconductor. This paper reviews various aspects of ion implantation in 4H–SiC studied with a view to optimise ion implantation in silicon carbide. Al, P and Si ions with keV energies were used.
Wong-Leung, Jennifer, Janson, M S, Kuznetsov, A Yu, Svensson, Bengt Gunnar, Linnarsson, M K, Hallen, A, Jagadish, Chennupati, Cockayne, David John Hugh   +7 more
openaire   +2 more sources

Toughening β‐Ga2O3 via Mechanically Seeded Dislocations

Advanced Functional Materials, EarlyView.
β‐Ga2O3 is promising for next‐generation semiconductors but its brittleness limits flexible and high‐precision applications. Here, mechanically seeded dislocations introduced by surface deformation improved damage tolerance in (001) β‐Ga2O3. Nanoindentation and characterization show dislocations suppress cleavage cracks by enabling stable plastic ...
Zanlin Cheng, Jiawen Zhang, Peng Gao, Guosong Zeng, Xufei Fang, Wenjun Lu   +5 more
wiley   +1 more source

Optical charge state control of spin defects in 4H-SiC [PDF]

Nature Communications, 2017
Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin ...
G. Wolfowicz, Christopher P Anderson, A. Yeats, S. Whiteley, J. Niklas, O. Poluektov, F. J. Heremans, D. Awschalom   +7 more
semanticscholar   +1 more source

Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures

Advanced Functional Materials, EarlyView.
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji, Zi'Ang Gao, Shiva Prasad Poudel, Rui‐Qi Cao, Tianzhe Chen, Luxin Li, Chong Liu, Salvador Barraza‐Lopez, Stuart S. P. Parkin, Kai Chang   +9 more
wiley   +1 more source

Oxidation removal mechanism based on ReaxFF-MD in 4H-SiC CMP

Jin'gangshi yu moliao moju gongcheng
ObjectivesSilicon carbide has the advantages of high temperature stability, high electron mobility, and wide bandgap, and has been widely used in fields such as new energy vehicles, photovoltaics, and integrated circuits.
Tianyu ZHANG, Zirui WANG, Rui ZHU, Yang PENG, Yuguang ZHU, Shengjie YOU, Yongguang WANG, Chuanyang WANG   +7 more
doaj   +1 more source

On‐Surface Synthesis of Bismuth Monolayers through Ice‐Confined Redox Reactions

Advanced Materials, EarlyView.
We report an ice‐confined growth strategy for the synthesis of atomically thin 2D bismuth and related 2D metals. This approach involves rapid freezing of a BiCl3 aqueous solution on an aluminum foil using liquid nitrogen, which triggers interfacial redox reactions between the ice and the aluminum surface.
Zexiang He, Depeng Wang, Wentao Fan, Songlin Liu, Antonio Gaetano Ricciardulli, Haixia Zhong, Yiyong Mai, Paolo Samorì, Sheng Yang   +8 more
wiley   +1 more source

Electronic Structure and High Magnetic Properties of (Cr, Co)-codoped 4H–SiC Studied by First-Principle Calculations

Crystals, 2020
The electronic structure and magnetic properties of 3d transition metal (Cr, Co)-codoped 4H–SiC were studied by density functional theory within GGA methods.
Mengyu Zhang, Jingtao Huang, Xiao Liu, Long Lin, Hualong Tao   +4 more
doaj   +1 more source

Side-Illuminated Photoconductive Semiconductor Switch Based on High Purity Semi-Insulating 4H-SiC [PDF]

, 2021
Pyeung Hwi Choi, Yong Pyo Kim, Min-Seong Kim, Jiheon Ryu, Sung-Hyun Baek, Sung‐Min Hong, Sungbae Lee, Jae‐Hyung Jang   +7 more
openalex   +1 more source