Results 51 to 60 of about 19,738 (219)
Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts: Cubic inclusions in hexagonal SiC [PDF]
, 2015 Finite-element calculations of Schottky diode capacitance-voltage (C-V) curves show that an array of subsurface inclined quantum wells (QWs) produce negligible change in shape and slope of C-V curves, but significantly reduce the intercept voltage.
B. J. Skromme +6 more
core +1 more source
Anisotropic hole drift velocity in 4H-SiC [PDF]
Materials Science and Engineering: B, 2019 A theoretical study on the nonlinear transport of holes in the transient and steady state of p-doped 4H-SiC under the influence of high electric fields is presented. It is based on a nonlinear quantum kinetic theory which provides a clear description of the dissipative phenomena that are evolving in the system.
Vasconcelos, Jackelinne L. +2 more
openaire +2 more sources
Holos, 2019 AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and
Masoud Sabaghi
doaj +1 more source
Integrated photoanode based on silicon carbide nanowire arrays for efficient water splitting
工程科学学报, 2023 In the context of rapid social development, it is urgent to address the increasingly prominent issues of fossil energy depletion and environmental pollution.
Lin-lin ZHOU +4 more
doaj +1 more source
Neutral silicon interstitials in silicon carbide: a first principles study [PDF]
, 2009 International audienceAbstract. The structures and stability of single silicon interstitials in their neutral state are investigated via first principles calculations in 3C- and 4H-SiC.
Liao, Ting, Roma, Guido, Wang, Jingyang
core +5 more sources
Simple method for the growth of 4H silicon carbide on silicon substrate
AIP Advances, 2016 In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C60 powder of high purity (99.99%) was evaporated from molybdenum boat.
M. Asghar +6 more
doaj +1 more source
Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer
Micromachines, 2019 In this work, the piezoresistive properties of heavily doped p-type 4H-SiC at room temperature were investigated innovatively. It was verified by a field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), and laser Raman spectroscopy
Yongwei Li +8 more
doaj +1 more source
, 2019 Full investigation of deep defect states and impurities in wide-bandgap materials by employing commercial transient capacitance spectroscopy is a challenge, demanding very high temperatures. Therefore, a high-temperature deep-level transient spectroscopy
A. Hallén +8 more
core +1 more source
Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes [PDF]
, 2015 Fabrication and electrical and optical characterization of 4H-SiC Schottky UV photodetectors with nickel silicide interdigitated contacts is reported. Dark capacitance and current measurements as a function of applied voltage over the temperature range ...
A. Sciuto +28 more
core +1 more source
Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures
Advanced Functional Materials, EarlyView.The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji +9 more
wiley +1 more source