Results 71 to 80 of about 261,592 (260)

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress [PDF]

open access: yesNanotechnology, 2019
The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failed after three months of high temperature reverse bias stress. A local inspection of the failed devices demonstrated the presence of a threading dislocation (TD) at the breakdown ...
P. Fiorenza   +9 more
semanticscholar   +1 more source

Robust C–V Ratio Technique for Profiling Defects in Proton‐Irradiated 4H‐SiC

open access: yesAdvanced Electronic Materials, EarlyView.
A noise‐robust C–V ratio technique is introduced to profile radiation‐induced defects in proton‐irradiated 4H‐SiC Schottky diodes. By using analytical capacitance ratios instead of numerical differentiation, the method directly extracts trap‐density and effective trap‐energy profiles at room temperature.
Kibeom Kim   +4 more
wiley   +1 more source

Effect of surface roughness on the nucleation of diamond on a 4H-SiC substrate

open access: yesFunctional Diamond
Diamond has the highest thermal conductivity among all materials and can be applied to overcome the heat dissipation problem in radio frequency devices based on the heterojunction of gallium nitride (GaN) and 4H silicon carbide (4H-SiC). However, growing
Hanchang Hu   +5 more
doaj   +1 more source

Electrical charge state identification and control for the silicon vacancy in 4H-SiC

open access: yesnpj Quantum Information, 2019
Reliable single-photon emission is crucial for realizing efficient spin-photon entanglement and scalable quantum information systems. The silicon vacancy ($${V}_{{\rm{Si}}}$$VSi) in 4H-SiC is a promising single-photon emitter exhibiting millisecond spin ...
M. E. Bathen   +7 more
semanticscholar   +1 more source

Toward Complete CO2 Electroconversion: Status, Challenges, and Perspectives

open access: yesAdvanced Energy Materials, EarlyView.
Electrocatalytic CO2 reduction and CO2 batteries face challenges in achieving complete CO2 conversion with high conversion rates and Faradaic efficiency simultaneously. Existing systems compromise one for the other with incomplete CO2 conversion and inefficiencies, hindering practical applications. This perspective highlights state‐of‐the‐art progress,
Changfan Xu   +5 more
wiley   +1 more source

Gallium Vanadium Oxide‐Based Free‐Standing Versatile Electrode for Next‐Generation Lithium and Sodium Energy Storage: Combined Experimental and First‐Principles Insights into Electrochemical Performance

open access: yesENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
A gallium vanadium oxide (GVO)‐based free‐standing electrode is fabricated via a two‐step process involving a wet ball mill followed by thermal treatment and the surface‐engineered tape casting technique. The resulting GVO‐based free‐standing composite electrode has been successfully utilized for four distinct energy storage applications without any ...
Amarsingh Bhabu Kanagaraj   +6 more
wiley   +1 more source

Enhancing Electrical and Interfacial Properties of BeO/4H‐SiC Structures with SiO2 Interlayer

open access: yesAdvanced Electronic Materials
Beryllium oxide (BeO) has exceptionally high thermal conductivity (330 W m−1·K−1), a large bandgap energy, and a high dielectric constant, making it an optimal dielectric for high‐power devices.
Sangoh Han   +7 more
doaj   +1 more source

Ultra‐High Strength and Environmentally Stable Fluorinated Solid‐State Ion‐Conductive Elastomers with Folding‐Paper‐Structured Triboelectric Nanogenerators for Wave Energy Harvesting

open access: yesENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
In this work, a polyurethane‐based fluorinated SICEs with excellent mechanical properties (7.35 MPa and 61.4 MJ m−3), conductivity (4.2 × 10−4 S cm−1), and harsh environmental resistance were prepared by a “three birds with one stone” strategy that combines multiple interactions with fluorine effects. The paper‐folding TENG is capable of harvesting not
Zequan Li   +9 more
wiley   +1 more source

Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

open access: yesMicromachines, 2020
In this paper, the chemical vapor deposition (CVD) processing for 4H-SiC epilayer is investigated with particular emphasis on the defects and the noise properties.
Jinlan Li   +6 more
doaj   +1 more source

Crystal Plane Engineering of Zn Nanosheet Arrays Toward Robust Hybrid Capacitive Energy Storage

open access: yesENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
This work demonstrates a dual‐phase ZnCl2 concentration strategy dynamically switching Zn2+ solvation from [Zn(H2O)6]2+ to [ZnCl(H2O)5]+. The solvation shift steers the epitaxial growth of Zn nanosheet arrays, favoring the (002) crystal plane over (101).
Weijun Li   +6 more
wiley   +1 more source

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