Results 71 to 80 of about 19,738 (219)
Excitation properties of the divacancy in 4H-SiC
, 2018 We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbour silicon and carbon vacancies.
Csóré, András +6 more
core +1 more source
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.In this work, a polyurethane‐based fluorinated SICEs with excellent mechanical properties (7.35 MPa and 61.4 MJ m−3), conductivity (4.2 × 10−4 S cm−1), and harsh environmental resistance were prepared by a “three birds with one stone” strategy that combines multiple interactions with fluorine effects. The paper‐folding TENG is capable of harvesting not
Zequan Li +9 more
wiley +1 more source
Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
, 2017 The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths.
Awschalom, David D. +13 more
core +2 more sources
Theoretical study of the mechanism of dry oxidation of 4H-SiC [PDF]
, 2005 Possible defect structures, arising from the interaction of O-2 molecules with an ideal portion of the SiC/SiO2 interface, have been investigated systematically using density functional theory.
Adam Gali +13 more
core +1 more source
Crystal Plane Engineering of Zn Nanosheet Arrays Toward Robust Hybrid Capacitive Energy Storage
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.This work demonstrates a dual‐phase ZnCl2 concentration strategy dynamically switching Zn2+ solvation from [Zn(H2O)6]2+ to [ZnCl(H2O)5]+. The solvation shift steers the epitaxial growth of Zn nanosheet arrays, favoring the (002) crystal plane over (101).
Weijun Li +6 more
wiley +1 more source
Journal of Telecommunications and Information Technology, 2000 Silicon carbide (SiC) power devices offer significant benefits of improved efficiency, dynamic performance and reliability of electronic and electric systems.
Mietek Bakowski
doaj +1 more source
Surface defects in 4H-SiC homoepitaxial layers
Nanotechnology and Precision Engineering, 2020 Although a high-quality homoepitaxial layer of 4H‑silicon carbide (4H-SiC) can be obtained on a 4° off-axis substrate using chemical vapor deposition, the reduction of defects is still a focus of research.
Lixia Zhao
doaj +1 more source
High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
, 2010 Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 80 off-axis substrates.
Arthur +37 more
core +1 more source
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.First integration of ZnO nanorods with aerosol‐printed 3D Ag meshes for UV photodetector. 3D Ag/ZnO enhances light absorption and charge separation by providing a large active surface area for efficient charge generation and a strong UV response.
Elius Hossain +3 more
wiley +1 more source
Wafer‐Scale Self‐Limiting Epitaxy of Bernal‐Stacked Single‐Crystal Boron Nitride
Small, EarlyView.Wafer‐scale, single‐crystal Bernal‐stacked boron nitride (bBN) bilayers are grown by flow‐modulated MOCVD, where monoatomic Ni step edges on Ni(111) deterministically direct AB stacking. As an ultrathin interlayer, bBN suppresses interfacial scattering and enables robust, nonvolatile polarization switching in MoS2 channels, offering a scalable platform
Jaewon Wang +22 more
wiley +1 more source