Results 71 to 80 of about 261,592 (260)
Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress [PDF]
The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failed after three months of high temperature reverse bias stress. A local inspection of the failed devices demonstrated the presence of a threading dislocation (TD) at the breakdown ...
P. Fiorenza +9 more
semanticscholar +1 more source
Robust C–V Ratio Technique for Profiling Defects in Proton‐Irradiated 4H‐SiC
A noise‐robust C–V ratio technique is introduced to profile radiation‐induced defects in proton‐irradiated 4H‐SiC Schottky diodes. By using analytical capacitance ratios instead of numerical differentiation, the method directly extracts trap‐density and effective trap‐energy profiles at room temperature.
Kibeom Kim +4 more
wiley +1 more source
Effect of surface roughness on the nucleation of diamond on a 4H-SiC substrate
Diamond has the highest thermal conductivity among all materials and can be applied to overcome the heat dissipation problem in radio frequency devices based on the heterojunction of gallium nitride (GaN) and 4H silicon carbide (4H-SiC). However, growing
Hanchang Hu +5 more
doaj +1 more source
Electrical charge state identification and control for the silicon vacancy in 4H-SiC
Reliable single-photon emission is crucial for realizing efficient spin-photon entanglement and scalable quantum information systems. The silicon vacancy ($${V}_{{\rm{Si}}}$$VSi) in 4H-SiC is a promising single-photon emitter exhibiting millisecond spin ...
M. E. Bathen +7 more
semanticscholar +1 more source
Toward Complete CO2 Electroconversion: Status, Challenges, and Perspectives
Electrocatalytic CO2 reduction and CO2 batteries face challenges in achieving complete CO2 conversion with high conversion rates and Faradaic efficiency simultaneously. Existing systems compromise one for the other with incomplete CO2 conversion and inefficiencies, hindering practical applications. This perspective highlights state‐of‐the‐art progress,
Changfan Xu +5 more
wiley +1 more source
A gallium vanadium oxide (GVO)‐based free‐standing electrode is fabricated via a two‐step process involving a wet ball mill followed by thermal treatment and the surface‐engineered tape casting technique. The resulting GVO‐based free‐standing composite electrode has been successfully utilized for four distinct energy storage applications without any ...
Amarsingh Bhabu Kanagaraj +6 more
wiley +1 more source
Enhancing Electrical and Interfacial Properties of BeO/4H‐SiC Structures with SiO2 Interlayer
Beryllium oxide (BeO) has exceptionally high thermal conductivity (330 W m−1·K−1), a large bandgap energy, and a high dielectric constant, making it an optimal dielectric for high‐power devices.
Sangoh Han +7 more
doaj +1 more source
In this work, a polyurethane‐based fluorinated SICEs with excellent mechanical properties (7.35 MPa and 61.4 MJ m−3), conductivity (4.2 × 10−4 S cm−1), and harsh environmental resistance were prepared by a “three birds with one stone” strategy that combines multiple interactions with fluorine effects. The paper‐folding TENG is capable of harvesting not
Zequan Li +9 more
wiley +1 more source
In this paper, the chemical vapor deposition (CVD) processing for 4H-SiC epilayer is investigated with particular emphasis on the defects and the noise properties.
Jinlan Li +6 more
doaj +1 more source
Crystal Plane Engineering of Zn Nanosheet Arrays Toward Robust Hybrid Capacitive Energy Storage
This work demonstrates a dual‐phase ZnCl2 concentration strategy dynamically switching Zn2+ solvation from [Zn(H2O)6]2+ to [ZnCl(H2O)5]+. The solvation shift steers the epitaxial growth of Zn nanosheet arrays, favoring the (002) crystal plane over (101).
Weijun Li +6 more
wiley +1 more source

