Study on the Carbonation Behavior of Steel Slag in the SiC-K<sub>2</sub>SiO<sub>3</sub> System Assisted by Microwave Heating. [PDF]
Long W, Fu W, Jiang W.
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Sputtered Piezoelectric AlN Thin Films: Parameter Optimisation, Deposition Challenges, and Emerging Perspectives-A Review. [PDF]
Muralidaran R +5 more
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SiC resistive X-ray beam monitor for intensity and position control of synchrotron light. [PDF]
Trovato G +7 more
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Application of UV Laser for Ohmic Contact Formation on 4H-SiC. [PDF]
Kubiak A +3 more
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Fabrication of Three-Dimensional Microstructures on SiC Substrates by Using 355 nm Nanosecond Lasers: Process Control and Morphology Evolution. [PDF]
Tsai HY +4 more
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Defect Reduction in HEMT Epilayers on SiC Meta-Substrates. [PDF]
Su VC, Wei TY, Chen MH, Ku CT, Liu GS.
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Heteroepitaxial 3C-SiC for MEMS Applications. [PDF]
Garofalo A +6 more
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Impact ionization coefficients of 4H silicon carbide
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Dislocations in 4H silicon carbide
Journal of Physics D: Applied Physics, 2022Abstract Owing to the superior properties of the wide bandgap, high carrier mobility, high thermal conductivity and high stability, 4H silicon carbide (4H-SiC) holds great promise for applications in electrical vehicles, 5G communications, and new-energy systems.
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