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Impurities and defects in 4H silicon carbide
Applied Physics Letters, 2023The widespread use of 4H silicon carbide (4H-SiC) is just around the corner since high-power electronics based on 4H-SiC are increasingly fabricated to enable the low-carbon development of the world. Quantum technologies are also intensively explored by scrutinizing 4H-SiC as a platform for wafer-scale integration of semiconductor and quantum ...
Rong Wang +3 more
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4H-Silicon Carbide as an Acoustic Material for MEMS
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2023This article discusses the potential of 4H-silicon carbide (SiC) as a superior acoustic material for microelectromechanical systems (MEMS), particularly for high-performance resonator and extreme environments applications. Through a comparison of the crystalline structure along with the mechanical, acoustic, electrical, and thermal properties of 4H ...
Yaoyao Long, Zhenming Liu, Farrokh Ayazi
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Physica B: Condensed Matter, 2001
We present experimental results related to several different intrinsic defects that in different ways influence the material properties and are therefore technologically important defects.
J.P. Bergman +5 more
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We present experimental results related to several different intrinsic defects that in different ways influence the material properties and are therefore technologically important defects.
J.P. Bergman +5 more
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Physica B: Condensed Matter, 2009
Data for low-field muon spin rotation spectra for 4H-SiC is presented for a wide temperature range from 10 to 1400 K. At low temperatures, dependence of amplitude transitions for all the samples show carrier capture processes. For p-type sample in the intermediate temperature region transition energies imply both donor and acceptor ionizations.
Y.G. Celebi +4 more
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Data for low-field muon spin rotation spectra for 4H-SiC is presented for a wide temperature range from 10 to 1400 K. At low temperatures, dependence of amplitude transitions for all the samples show carrier capture processes. For p-type sample in the intermediate temperature region transition energies imply both donor and acceptor ionizations.
Y.G. Celebi +4 more
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Phosphorus implantation into 4H-silicon carbide
Journal of Electronic Materials, 2000Sheet resistances in nitrogen- and phosphorus-implanted 4H-SiC are measured to assess the time and temperature dependencies of this variable. In 4H-SiC implanted with 3 × 1015 cm−2 nitrogen ions to a depth of 2800 A, the minimum sheet resistance observed is 534 Ω/□.
M. A. Capano +4 more
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Muonium transitions in 4H silicon carbide
Physica B: Condensed Matter, 2009Preliminary low-field data on the diamagnetic muon spin rotation signal in 4H-SiC are presented. The initial results on all three electrical types of 4H-SiC are compared with those for the 6H polytype. Analysis of amplitude transitions at low temperatures in n- and p-type samples indicates carrier capture.
Y.G. Celebi +7 more
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A Study of the Elastic Constants of 4H Silicon Carbide (4H-SiC)
2019 18th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2019Stress sensors integrated on silicon ICs represent a powerful tool for experimental evaluation of die stress distributions, but silicon's upper temperature range is limited by its relatively low bandgap energy. Stress sensors made with wide bandgap semiconductor such as 4H silicon carbide (4H-SiC) offer the advantage of much higher temperature ...
Jun Chen +3 more
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Defect structure of 4H silicon carbide ingots
Journal of Crystal Growth, 2011Defects caused by 15R polytype inclusions in 4H silicon carbide ingots have been considered. Growth rate along with curvature of the interface determines the stability of the 4H-polytype reproduction. The domain structure arising in the 4H polytype as a result of foreign polytype inclusion has been analyzed.
A.O. Lebedev +5 more
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Vanadium-related Center in 4H Silicon Carbide
Materials Science Forum, 2000The V4+ (3d(1)) center in 4H SiC is investigated using photoluminescence (PL) and photoluminescence excitation (PLE). The energy position of the ground state of the defect is determined to be 2.1 +/- 0.1 eV below the conduction band for both the hexagonal and the quasi-cubic site.
Björn Magnusson +3 more
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Hydrostatic Calibration of the Piezoresistive Coefficients on 4H Silicon Carbide
2021 20th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm), 2021Silicon carbide (SiC) has been shown to be a good alternative to silicon in the development of stress sensors for harsh environments due to its desirable material properties. The piezoresistive behavior of stress sensors is characterized by piezoresistive coefficients, which must be calibrated before use in stress measurement.
Jun Chen +3 more
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