Results 51 to 60 of about 89 (89)

Photoelectrochemical etching of n-type 4H silicon carbide

Journal of Applied Physics, 2004
Photoelectrochemical etching of highly doped n-type 4H SiC in dilute hydrofluoric acid along different crystallographic orientations under low voltage and/or low current conditions is studied. Scanning electron microscope images show that anodization of the hexagonal polytype 4H SiC with subsequent pore formation proceeds anisotropically.
Y. Shishkin, W. J. Choyke, R. P. Devaty
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4H-silicon carbide thin junction based ultraviolet photodetectors

Thin Solid Films, 2012
This paper deals with the study of the photoresponse properties of 4H-SiC UV-photodetector devices based on a thin junction following their testing in darkness and under UV light over the 200 to 400 nm range. An increase of the carrier harvesting for low implanted layer thickness was shown by simulation. Thus, an implantation at low energy (27 keV) was
Biondo, Stéphane, Lazar, Mihai, Ottaviani, Laurent, Vervisch, Wilfried, Le Borgne, Vincent, El Khakani, My Ali, Duchaine, Julian, Milesi, Frédéric, Palais, Olivier, Planson, Dominique   +9 more
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Surface roughening in ion implanted 4H-silicon carbide

Journal of Electronic Materials, 1999
Silicon carbide (SiC) devices have the potential to yield new components with functional capabilities that far exceed components based on silicon devices. Selective doping of SiC by ion implantation is an important fabrication technology that must be completely understood if SiC devices are to achieve their potential.
M. A. Capano, S. Ryu, J. A. Cooper, M. R. Melloch, K. Rottner, S. Karlsson, N. Nordell, A. Powell, D. E. Walker   +8 more
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Planar edge termination for 4H-silicon carbide devices

IEEE Transactions on Electron Devices, 1996
In this paper, it is demonstrated that the edge termination for 6H-SiC based upon self-aligned implantation of a neutral species on the edges of devices to form an amorphous layer can also be applied to 4H-SiC inspite of differences in their band structures.
D. Alok, R. Raghunathan, B.J. Baliga
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Incomplete ionization in aluminum-doped 4H-silicon carbide

Journal of Applied Physics, 2019
In this work, we investigate the degree of incomplete ionization of Al doped 4H-SiC. In particular, we perform analysis on a comprehensive list of published measurements of ionization energy, resistivity, and Hall mobility for varying Al concentration.
C. Darmody, N. Goldsman
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Investigation Of Microplasma Breakdown In 4H Silicon Carbide

MRS Proceedings, 1998
ABSTRACTReverse bias breakdown behaviour of high quality 4H silicon carbide p-n diodes was investigated, using optical and electrical measurement techniques. Most of the sample diodes suffered from early breakdown phenomena in the form of microplasmas at about 80% of the calculated parallel plane breakdown voltage for the diodes, as evident from ...
Uwe Zimmermann, Anders Hallén, Andrey O. Konstantinov, Bo Breitholtz   +3 more
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Piezoresistive 4H-Silicon Carbide (SiC) pressure sensor

2021 IEEE Sensors, 2021
Piotr Mackowiak, Kolja Erbacher, Manuel Baeuscher, Michael Schiffer, Klaus-Dieter Lang, Martin Schneider-Ramelow, Ha-Duong Ngo   +6 more
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6H- and 4H-silicon carbide for device applications

1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145), 2002
4H- and 6H-SiC crystals with the values of N/sub d/-N/sub a/ from 5 10/sup 18/ cm/sup -3/ to less than 2 10/sup 15/ cm/sup -3/ have been grown. Material with high resistivity is of great importance for high temperature electronics and other severe environment electronics based on silicon carbide as well as nitride-based electronics.
A.S. Bakin, S.I. Dorozhkin, A.S. Zubrilov   +2 more
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Infrared absorption spectra of 4H silicon carbide

Applied Physics A Materials Science & Processing, 2001
We performed infrared absorption measurements on 4H-SiC samples with polarization E∥c and E⊥c at 8, 85 and 300 K. From the strong temperature dependence of the absorption lines, electronic transitions are separated from vibronic transitions. The electronic transition lines between 300 and 500 cm-1 are assigned to the shallow nitrogen donor. It is found
Chen, C., Helbig, R., Engelbrecht, F., Zeman, J.   +3 more
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A Study of the Elastic Constants of 4H Silicon Carbide (4H-SiC)

2019 18th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2019
Stress sensors integrated on silicon ICs represent a powerful tool for experimental evaluation of die stress distributions, but silicon's upper temperature range is limited by its relatively low bandgap energy. Stress sensors made with wide bandgap semiconductor such as 4H silicon carbide (4H-SiC) offer the advantage of much higher temperature ...
Jun Chen, Abdullah Fahim, Jeffrey C. Suhling, Richard C. Jaeger   +3 more
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