Results 91 to 100 of about 36,563 (205)
Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
Nanoscale Research Letters, 2011 We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer ...
Jo Masafumi +3 more
doaj
Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers
The Scientific World Journal, 2014 This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN).
Moustafa Ahmed
doaj +1 more source
Modelocking of AlGaAs laser diode by intracavity AlGaAs phase-modulator
Electronics Letters, 1989 Active modelocking of an 830 nm AlGaAs laser diode by an intracavity AlGaAs phase-modulator is reported. The typical states of modelocking by pure phase-modulation, the even state, the odd state and double pulsing are demonstrated. The behaviour of a semiconductor laser in this experiment corresponds to that one known from the HeNe laser and Nd:YAG ...
J. BÖsl +5 more
openaire +1 more source
Recent Progress in on‐Demand Transfer‐Enabled Integration of Wavelength‐Scale Light Sources
Nanophotonics, Volume 15, Issue 4, 24 February 2026.A novel integration technology using micro‐transfer‐printing, demonstrating individually and selectively addressable pick‐up of a microlaser on a growth wafer and on‐demand integration at a predetermined location on the compact PIC chip. ABSTRACT The growing demand for massive and high‐speed data processing within compact photonic circuits has ...
Hyundong Kim +7 more
wiley +1 more source
Nanowire quantum dots tuned to atomic resonances [PDF]
, 2018 Quantum dots tuned to atomic resonances represent an emerging field of hybrid quantum systems where the advantages of quantum dots and natural atoms can be combined.
Akopian, Nika +9 more
core +3 more sources
Rare Metals, Volume 45, Issue 2, February 2026.ABSTRACT Photodetectors, based on GaAs nanowires (NWs), hold significant promise in the fields of high integration micro‐ and nano‐optoelectronics applications because of their outstanding electronic and optical properties. To date, significant efforts have been directed toward enhancing the performance of photodetectors, aiming for high detectivity ...
Yu Hao +11 more
wiley +1 more source
Numerical study of valence band states evolution in AlxGa1-xAs [111] QDs systems [PDF]
PeerJ Materials ScienceQuantum dots (QDs) are very attractive nanostructures from an application point of view due to their unique optical properties. Optical properties and valence band (VB) state character was numerically investigated with respect to the effects of ...
Mikhail Lazarev
doaj +2 more sources
Optical Transmittance Maximization in Superior Performance Tunnel Junctions for Very High Concentration Applications. [PDF]
, 2010 The light transmission through a tunnel junction in a multijunction solar cell depends on the optical properties and thickness of the whole solar cell layers stack, which configure the light absorption, reflection and interference processes taking place ...
Algora del Valle, Carlos +2 more
core +1 more source
, 2010 We report the observation of a colossal, narrow resistance peak that arises in ultraclean (mobility 3X10^7cm^2/Vs) GaAs/AlGaAs quantum wells (QWs) under millimeterwave irradiation and a weak magnetic field.
A. P. Dmitriev +4 more
core +1 more source
Solid-state ensemble of highly entangled photon sources at rubidium atomic transitions [PDF]
, 2016 Semiconductor InAs/GaAs quantum dots grown by the Stranski-Krastanov method are among the leading candidates for the deterministic generation of polarization entangled photon pairs.
Chen, Yan +6 more
core +3 more sources