Results 31 to 40 of about 36,563 (205)
Self-consistent scattering model of carrier dynamics in GaAs-AlGaAs terahertz quantum-cascade lasers [PDF]
, 2003 Intersubband electron scattering transport in terahertz GaAs–AlGaAs quantum cascade lasers is analyzed, using a full 13-level self-consistent rate equation model.
Harrison, P. +3 more
core +1 more source
Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes
AIP Advances, 2018 GaAs-class strained superlattice (SSL) photocathodes can provide electron beams with electron spin polarization (ESP) exceeding the theoretical maximum 50% of bulk GaAs.
Wei Liu +5 more
doaj +1 more source
Optical loss and lasing characteristics of high-quality-factor AlGaAs microdisk resonators with embedded quantum dots [PDF]
, 2004 Optical characterization of AlGaAs microdisk resonant cavities with a quantum dot active region is presented. Direct passive measurement of the optical loss within AlGaAs microdisk resonant structures embedded with InAs/InGaAs dots-in-a-well (DWELL) is ...
Andreas Stintz +7 more
core +2 more sources
Cumhuriyet Science JournalThis study investigates the electronic and optical properties of a GaAs/AlxGa1-xAs triple triangular quantum well (QW) structure, focusing on the 2-4 and 3-4 intersubband transitions. By varying the right barrier (RB) thickness from 0 to 6 nm, the impact
Behçet Özgür Alaydin
doaj +1 more source
Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
Scientific Reports, 2021 Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of their ...
Mahdi Hajlaoui +10 more
doaj +1 more source
Luminescence from Droplet-Etched GaAs Quantum Dots at and Close to Room Temperature
Nanomaterials, 2021 Epitaxially grown quantum dots (QDs) are established as quantum emitters for quantum information technology, but their operation under ambient conditions remains a challenge.
Leonardo Ranasinghe +5 more
doaj +1 more source
Suppressed spin dephasing for 2D and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms [PDF]
, 2010 We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [
Denega, S. Z. +9 more
core +3 more sources
Multiple Quantum Well AlGaAs Nanowires [PDF]
Nano Letters, 2008 This letter reports on the growth, structure and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during the molecular beam epitaxy growth of the AlGaAs wire on GaAs (111)B substrates.
Chen, C. +5 more
openaire +3 more sources
Advanced Electronic Materials, EarlyView.III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero +6 more
wiley +1 more source
The effect of carrier density gradients on magnetotransport data measured in Hall bar geometry
, 2003 We have measured magnetotransport of the two-dimensional electron gas in a Hall bar geometry in the presence of small carrier density gradients. We find that the longitudinal resistances measured at both sides of the Hall bar interchange by reversing the
A. de Visser +17 more
core +2 more sources