Results 61 to 70 of about 36,563 (205)
Tunnel Junctions for III-V Multijunction Solar Cells Review
Crystals, 2018 Tunnel Junctions, as addressed in this review, are conductive, optically transparent semiconductor layers used to join different semiconductor materials in order to increase overall device efficiency.
Peter Colter +2 more
doaj +1 more source
Micromachines, 2023 The Al/Au alloy was investigated to improve the ohmic characteristic and light efficiency of reflective infrared light-emitting diodes (IR-LEDs). The Al/Au alloy, which was fabricated by combining 10% aluminum and 90% gold, led to considerably improved ...
Hyung-Joo Lee +4 more
doaj +1 more source
Magneto-optical study of thermally annealed InAs-InGaAs-GaAs self-assembled quantum dots [PDF]
, 2009 We report a magneto-optical study of InAs-InGaAs-GaAs self-assembled quantum dots (QDs) subjected to post-growth thermal annealing at different temperatures.
Bimberg D. +7 more
core +1 more source
Mid‐Infrared Integrated Photonics: Material Platforms and Emerging Applications
Laser &Photonics Reviews, Volume 20, Issue 6, 18 March 2026.Mid‐infrared (MIR) integrated photonics enables advanced chemical and biological sensing through the unique absorption features of molecules in the 2–20 µm range. This review highlights recent material advances such as chalcogenide glasses, silicon, and graphene and explores MIR applications in environmental monitoring, medical diagnostics ...
Muhammad Ali Butt +2 more
wiley +1 more source
Fabrication of AlGaAs/GaAs/diamond heterojunctions for diamond-collector HBTs
AIP Advances, 2020 Diamond is a highly attractive ultrawide bandgap semiconductor for next-generation high-power switching devices and RF devices for its superior physical and electrical properties.
Sang June Cho +16 more
doaj +1 more source
Giant Stark effect in the emission of single semiconductor quantum dots
, 2010 We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of -500 kV/cm, leading to ...
Adachi S. +8 more
core +1 more source
Finite Temperature Resonant Magnetotunneling in AlGaAs-GaAs-AlGaAs Heterostructures
, 1995 We have analyzed the effect of electron-LO phonon interaction in a double-barrier resonant tunneling structure under a magnetic field {\bf B} applied parallel to the tunneling current. While the low temperature anti-crossing phenomenon has already been investigated, here we study the phonon absorption resonant magnetotunneling at finite temperatures ...
Boe, Oe. Lund +2 more
openaire +2 more sources
Nanophotonics, Volume 15, Issue 6, 27 March 2026.Scalable quantum photonics require robust realization of quantum light sources for foundry‐scale fabrication. An interferometrically coupled silicon nitride microring resonator enables post‐fabrication control of bus–ring coupling. Thermal phase shifters adjust the Q‐factor and the pair generation rate, revealing that optimal generation does not occur ...
Jan Heine +2 more
wiley +1 more source
CHARACTERIZATION OF AlGaAs THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING
Momento, 2018 Las películas de AlGaAs fueron depositadas por pulverización catódica asistida por campo magnético sobre sustratos de vidrio y Si (100). Se mantuvo constante la temperatura del substrato y se varió la relación de la potencia de los blancos de Al y GaAs ...
Juan D. Losada Losada +1 more
doaj +1 more source
Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices [PDF]
, 2004 We examine the phase and the period of the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices utilizing in-situ magnetic field calibration by Electron Spin Resonance of DiPhenyl-Picryl-Hydrazal. The results confirm a $f$-independent 1/
J. H. Smet +12 more
core +3 more sources