Results 71 to 80 of about 36,563 (205)

GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for high-power semiconductor infrared emitters

Technical Physics, 2022
The internal quantum efficiency of GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for infrared light emitter diodes has been determined. The influence of the growth conditions of heterostructures grown by the molecular beam epitaxy and post-growth annealing on the quantum efficiency of heterostructures has been investigated.
D. V. Gulyaev, D. V. Dmitriev, N. V. Fateev, D. Yu. Protasov, A. S. Kozhukhov, K. S. Zhuravlev   +5 more
openaire   +1 more source

Epitaxial Lift‐Off Process for Triple‐Junction Solar Cells Using Internal Push–Pull Stressors

Progress in Photovoltaics: Research and Applications, Volume 34, Issue 3, Page 239-246, March 2026.
Epitaxial lift‐off of multijunction solar cells is achieved using internal push‐pull stressors to enable thin‐film release. An oxide sidewall protection layer ensures selective etching of the sacrificial layer while preventing damage to Al and P containing active layers.
Prabudeva Ramu, Arto Aho, Riku Isoaho, Antti Tukiainen, Jarno Reuna, Ville Polojärvi, Timo Aho, Turkka Salminen, Teemu Hakkarainen, Mircea Guina   +9 more
wiley   +1 more source

Observation of electronic modes in open cavity resonator

Nature Communications, 2023
Electron optics draws upon the resemblance between electron and optical waves. Here, the authors report on the observation of electron mode formation in open cavity resonators realized in a GaAs/AlGaAs two-dimensional electronic gas.
Hwanchul Jung, Dongsung T. Park, Seokyeong Lee, Uhjin Kim, Chanuk Yang, Jehyun Kim, V. Umansky, Dohun Kim, H.-S. Sim, Yunchul Chung, Hyoungsoon Choi, Hyung Kook Choi   +11 more
doaj   +1 more source

Capacitance of a Double-Heterojunction GaAs/AlGaAs Structure Subjected to In-Plane Magnetic Fields: Results of Self-Consistent Calculations

, 1993
The capacitance of a double-heterojunction structure with a wide GaAs undoped layer embedded between two selectively doped AlGaAs barriers is calculated self-consistently as a function of intensity of the in-plane magnetic field.
Jungwirth, T., Smrcka, L.
core   +2 more sources

High‐Temperature Stable Narrowband Near‐Infrared Phosphor‐Converted Light‐Emitting Diode Based on Melt‐Grown CsPbCl3: Yb3+ Crystal

Rare Metals, Volume 45, Issue 3, March 2026.
ABSTRACT Narrowband near‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) featuring low full‐width at half maximum (FWHM) and high conversion efficiency are crucial for chemical content evaluation, light therapy, and bioimaging.
Chunshen Li, Yuexin Zhu, Wendong Nie, Haomiao Zhu, Peng Zhang   +4 more
wiley   +1 more source

Self‐Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Axial Heterostructures Grown by Molecular Beam Epitaxy

Advanced Materials Interfaces
Self‐catalyzed AlGaAs nanowires (NWs) offer advantageous properties, including lattice matching to GaAs, a wide range of electronic bandgaps, and monolithic integration with the mature Si platform due to elastic strain relaxation.
Giorgos Boras, Haotian Zeng, Stephen Church, Raghavendra Juluri, Anton Velichko, Huiwen Deng, Hui Jia, Francisco Alvarado, Ziyue Yin, Chong Chen, Jaeseong Park, Mingchu Tang, David Mowbray, Ana M. Sanchez, Patrick Parkinson, Huiyun Liu   +15 more
doaj   +1 more source

Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy

Nanoscale Research Letters, 2010
We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration ...
Isella G, Chrastina D, Fedorov A, Bietti S, Somaschini C, Sarti E, Koguchi N, Sanguinetti S   +7 more
doaj   +1 more source

Integrated AlGaAs source of highly indistinguishable and energy-time entangled photons

, 2015
The generation of nonclassical states of light in miniature chips is a crucial step towards practical implementations of future quantum technologies.
Autebert, Claire, Bruno, Natalia, Carbonell, Carmen Gomez, Ducci, Sara, Favero, Ivan, Lemaître, Aristide, Leo, Giuseppe, Martin, Anthony, Zbinden, Hugo   +8 more
core   +2 more sources

High‐Temperature Operation of All‐Molecular Beam Epitaxy InAs/GaAs Quantum Dot Lasers on V‐Grooved Si (001)

physica status solidi (a), Volume 223, Issue 4, 24 February 2026.
We demonstrate thermally reliable all‐MBE InAs/GaAs quantum dot lasers directly grown on V‐grooved Si (001). By preventing V‐groove deformation and eliminating micro‐cracks, the device achieves a maximum pulsed operating temperature of 150°C. This establishes a robust, scalable platform for monolithic Si photonics.
Jun Li, Haotian Zeng, Lifeng Bao, Jae‐Seong Park, Chong Chen, Yangqian Wang, Hexing Wang, Kongming Liu, Yutong Zhang, Makhayeni Mtunzi, Huiwen Deng, Hui Jia, Frederic Gardes, Jeremy Moeyaert, Thierry Baron, Mingchu Tang, Alwyn Seeds, Huiyun Liu   +17 more
wiley   +1 more source

Observation of a two-dimensional spin-lattice in non-magnetic semiconductor heterostructures [PDF]

, 2007
Tunable magnetic interactions in high-mobility nonmagnetic semiconductor heterostructures are centrally important to spin-based quantum technologies.
Farrer, Ian, Ghosh, Arindam, Pepper, Michael, Ritchie, David A., Siegert, Christoph   +4 more
core   +1 more source