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AlGaN/GaN microwave power HEMT's
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369), 2003High average microwave power output density has been observed with AlGaN/GaN HEMT's grown on sapphire substrates, reaching 4.0 W/mm with 49% power-added efficiency for single gates, and 1.8 W/mm with 78% power-added efficiency for multiple gates. Using SiC substrates, an order of magnitude more heat can be removed.
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Fabrication of AlGaN/GaN/AlGaN Double Heterostructure HEMT on Diamond
ECS Meeting Abstracts, 2011Abstract not Available.
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2017
???????????????????????? ???????????????????? ???????????????????????? ?????????????????????????? ?????????????? ?????????? ???????????????????????? ?????????????????????? ???? ???????????? ?????????????????????????????? AlGaN/GaN ?? ???????????????????? ?????????????????????????????? ?????????????????????? ???????????????? ??????????????, ?????????????
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???????????????????????? ???????????????????? ???????????????????????? ?????????????????????????? ?????????????? ?????????? ???????????????????????? ?????????????????????? ???? ???????????? ?????????????????????????????? AlGaN/GaN ?? ???????????????????? ?????????????????????????????? ?????????????????????? ???????????????? ??????????????, ?????????????
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AlGaN/GaN/graded-AlGaN Double-Heterostructure HEMTs
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, 2003Yugang Zhou +3 more
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2015
???????????????????? ???????????????????????? ?????? ?????????????? ???????????????????? ?????????????????????? ?? ???????????????? ?? 1,8 ?????? ???????????????????????????? ???? ?????????????? ???????????????????? ?????????????????????? ?? 3???10????? ?????????. ?????????????????? ?? ?????????????? ???????????????????? ???????????????????? ???? ??????
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???????????????????? ???????????????????????? ?????? ?????????????? ???????????????????? ?????????????????????? ?? ???????????????? ?? 1,8 ?????? ???????????????????????????? ???? ?????????????? ???????????????????? ?????????????????????? ?? 3???10????? ?????????. ?????????????????? ?? ?????????????? ???????????????????? ???????????????????? ???? ??????
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Semipolar (112̅2) AlGaN-Based Solar-Blind Ultraviolet Photodetectors with Fast Response
ACS Applied Materials & Interfaces, 2022Tongbo Wei
exaly
Photocurrent Properties of AlGaN/GaN/AlGaN Photodetecters on Si
Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials, 2001R. L. Jiang +6 more
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