Results 101 to 110 of about 166,038 (326)

Diffusion–Model–Driven Discovery of Ferroelectrics for Photocurrent Applications

open access: yesAdvanced Science, EarlyView.
We developed a diffusion model–based generative AI and high‐throughput screening framework that accelerates the discovery of photovoltaic ferroelectrics. By coupling AI driven crystal generation with machine learning and DFT screening, we identified Ca3P2 and LiCdP as new ferroelectric materials exhibiting strong polarization, feasible switching ...
Byung Chul Yeo   +3 more
wiley   +1 more source

The Faraday Scalpel: Electrochemical Nerve Lesioning Mechanisms Studied in Invertebrate Models

open access: yesAdvanced Science, EarlyView.
Direct‐current produces nerve lesioning through discrete electrochemical reactions. Using hypoxia‐sensitive locust nerves and hypoxia‐tolerant leech nerves, we map three injury pathways: cathodic oxygen reduction, cathodic alkalization, and anodic chloride oxidation. These findings establish electrochemical lesioning—the “Faraday Scalpel”—as a precise,
Petra Ondráčková   +5 more
wiley   +1 more source

Synaptic κ‐Ga2O3 Photodetectors for Privacy‐Enhancing Neuromorphic Computing

open access: yesAdvanced Science, EarlyView.
We report on a single‐element neuromorphic sensor based on the persistent photoconductivity (PPC) of κ‐phase Ga2O3 capable of sensing ultraviolet light and harnessing intrinsic data privacy. The approach establishes a materials‐enabled pathway toward compact, intelligent, and privacy‐enhancing optoelectronic hardware for next‐generation edge systems ...
Yanqing Jia   +13 more
wiley   +1 more source

Highly Vertically Oriented Graphene Microstrip Pads With Ultrahigh Through‐Plane Thermal Conductivity and Ultralow Compressive Modulus for Efficient Heat Dissipation

open access: yesAdvanced Science, EarlyView.
Vertically aligned graphene microstrip pads (GMPs) break the traditional thermomechanical trade‐off in thermal interface materials. It simultaneously achieves an ultrahigh through‐plane thermal conductivity of 565.92 W m−1 K−1 and an ultralow compressive modulus below 115.16 kPa.
Xu Ran   +7 more
wiley   +1 more source

Enhancement of Hardness and Corrosion Resistance of Al-Si-N Multilayer Coating Via Sin/Alsin/Aln Compositional Gradient Interlayer

open access: green, 2023
Xunwang Shi   +9 more
openalex   +1 more source

Impedance‐Matched High‐Overtone Thickness‐Shear Bulk Acoustic Resonators With Scalable Mode Volume

open access: yesAdvanced Science, EarlyView.
A bottom‐electrode‐free high‐overtone bulk acoustic resonator is achieved by lateral excitation of antisymmetric thickness‐shear modes on a lithium‐niobate‐on‐silicon platform. Planar electrode geometry eliminates conventional loading along the resonance path and confines acoustic energy within the electrode gap.
Zi‐Dong Zhang   +7 more
wiley   +1 more source

Enhanced Thermoelectric Performance of the Aln/Gan Bilayer

open access: green, 2022
Cong He   +4 more
openalex   +1 more source

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

open access: yesAdvanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero   +6 more
wiley   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

open access: yesAdvanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim   +4 more
wiley   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix   +10 more
wiley   +1 more source

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