Results 131 to 140 of about 3,294 (243)

Selenium‐Incorporated Polymerized Nonfullerene Acceptors/SWCNT Composites with Polymer‐Assisted n‐Doping for High‐Performance Organic Thermoelectrics

open access: yesAdvanced Functional Materials, Volume 36, Issue 46, 8 June 2026.
Selenium‐incorporated polymerized nonfullerene acceptor PCB2Se forms a strong supramolecular complex with SWCNTs, enabling a record‐high zT of 0.29. Sequential N‐DMBI doping, mediated through a polymer‐assisted electron‐transfer pathway, successfully converts the PCB2Se/SWCNT composite into an efficient n‐type material with an impressive power factor ...
Chi‐Chun Tseng   +8 more
wiley   +1 more source

Electron Dispersion at the Electron Edge of the Earth's Magnetospheric Cusp

open access: yesGeophysical Research Letters, Volume 53, Issue 10, 28 May 2026.
Abstract The Tandem Reconnection and Cusp Electrodynamics Reconnaissance Satellites (TRACERS) mission observes electron energy‐latitude dispersion at the equatorward edge of the magnetospheric cusp, and high‐cadence Analyzer for Cusp Electrons (ACE) measurements resolve the dispersed edge. The inverse velocity dispersion (low energy before high energy)
J. S. Halekas   +26 more
wiley   +1 more source

Ambipolar Effect Free Double Gate PN Diode Based Tunnel FET

open access: yes, 2016
In this paper, we present and investigate a double gate PN diode based tunnel field effect transistor (DGPNTFET). The importance of proposed structure is that the formation of different drain doping is not required and ambipolar effect in OFF state is ...
Mamta Khosla   +2 more
core   +1 more source

Observational Characteristics of Electron Distributions in the Martian Induced Magnetotail

open access: yesGeophysical Research Letters
Mars's magnetotail represents a unique case within the solar system, embodying both intrinsic and induced magnetic fields. Yet, the electron dynamics within this region have remained largely unexplored. Utilizing nine years of electron and magnetic field
Chi Zhang   +10 more
doaj   +1 more source

Suppressing Ambipolar Characteristics of WSe2 Field Effect Transistors Using Graphene Oxide

open access: yes, 2019
Monolayer (1L) tungsten diselenide (WSe2) is of interest for next generation ultrathin flexible electronic devices. However, typical WSe2 field effect transistors (FETs) show ambipolar characteristics that are not desirable for complementary field-effect-
Seok Joon Yun   +5 more
core  

Electron Energization by Ion Density Enhancement in the Martian Magnetotail—MAVEN Observations

open access: yesThe Astrophysical Journal
It has been long observed at Mars that electron fluxes are enhanced during the tail current sheet crossings, of which the cause is not well understood. We use a novel approach to reveal one of the electron energization mechanisms with observations from ...
Shaosui Xu   +9 more
doaj   +1 more source

Drain-Induced Multifunctional Ambipolar Electronics Based on Junctionless MoS2

open access: yes
Applying a drain bias to a strongly gate-coupled semiconductor influences the carrier density of the channel. However, practical applications of this drain-bias-induced effect in the advancement of switching electronics have remained elusive due to the ...
Yongwook Seok (9910026)   +7 more
core   +1 more source

Channel-Length-Modulated Avalanche Multiplication in Ambipolar WSe2 Field-Effect Transistors

open access: yes
Recently there has been growing interest in avalanche multiplication in two-dimensional (2D) materials and device applications such as avalanche photodetectors and transistors.
Kyeong-Yoon Baek (12343008)   +12 more
core   +1 more source

Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga2O3/NiO Semiconductors

open access: yes
Recent advancements in power electronics have been driven by Ga2O3-based ultrawide bandgap (UWBG) semiconductor devices, enabling efficient high-current switching.
Kumar, Mritunjay   +11 more
core   +1 more source

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