Results 151 to 160 of about 2,236 (212)

Functionalized Terthiophene as an Ambipolar Redox System: Structure, Spectroscopy, and Switchable Proton-Coupled Electron Transfer. [PDF]

J Am Chem Soc
Käch D, Klose D, Wettstein L, Bezdek MJ.   +3 more
europepmc   +1 more source

Single ambipolar OECT-based inverter with volatility and nonvolatility on demand. [PDF]

Sci Adv
Cong S, Chen J, Xie M, Deng Z, Chen C, Liu R, Duan J, Zhu X, Li Z, Cheng Y, Huang W, McCulloch I, Yue W.   +12 more
europepmc   +1 more source

Silver Ions as Ambipolar Dopants in InAs Nanocrystal Solids. [PDF]

Adv Mater
Cho H, Kim H, Kim M, Choi M, Jo H, Kim DI, Kang B, Roh S, Kim H, Park JS, Jeong S, Kang MS.   +11 more
europepmc   +1 more source

Recent Advances in Graphene-Based Field-Effect Transistor Biosensors for Disease Biomarker Detection and Clinical Prospects. [PDF]

Biosensors (Basel)
Nagpal D, Singh A, Link J, Mehta AS, Kumar A, Budhraja V.   +5 more
europepmc   +1 more source

Integrating Electric Ambipolar Effect for High-Performance Zinc Bromide Batteries. [PDF]

Nanomicro Lett
Li W, Xu H, Ke S, Zhang H, Chen H, Guo G, Xiong X, Zhang S, Fu J, Jing C, Cheng J, Liu S.   +11 more
europepmc   +1 more source

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Suppressing Ambipolar Current in UTFET by Auxiliary Gate

Iranian Journal of Science and Technology, Transactions of Electrical Engineering, 2020
In this paper, a new U-shaped channel tunneling-based field-effect transistor (UTFET) with auxiliary gate above drain is proposed. The ambipolar current in the proposed is investigated, in which simulation results show that ambipolar current takes place, due to drain-to-drain tunneling similar to gate-induced drain leakage in conventional MOSFETs.
Kaveh Eyvazi, Mohammad Azim Karami
openaire   +1 more source

Methods to Reduce Ambipolar Current of Various TFET Structures: a Review

Silicon, 2021
As far as miniaturization of devices are being continue in semiconductor market, there are alternative option has been discovered by the researcher. It is well known that Metal Oxide Semiconductor (MOS) devices have vast applications in various emerging fields from medical to defense. However, there are certain drawbacks of MOSFET such as limited value
Shreyas Tiwari, Rajesh Saha
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A junctionless inverted-TFET with increased ON-current and reduced ambipolarity

2017 8th IEEE Annual Information Technology, Electronics and Mobile Communication Conference (IEMCON), 2017
In this paper, we simulate and investigate a novel Tunnel Field-Effect Transistor (TFET) using the charge plasma concept on the source side. Herein, an inverted p-type source is created to form a p+-n tunneling diode structure on a uniformly n-type doped thin silicon film, hence named, Inverted-TFET (I-TFET).
M. Ehteshamuddin, Sajad A. Loan, M. Rafat, Abdullah G. Alharbi   +3 more
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A Novel Step-shaped Gate Tunnel FET with Low Ambipolar Current

2019 2nd International Symposium on Devices, Circuits and Systems (ISDCS), 2019
In this paper, a novel TFET architecture named the step-shaped gate TFET (SSG-TFET) has been proposed for the suppression of the ambipolar current. By adjusting the energy band, the SSG-TFET can evidently reduce the ambipolar current. We compare the proposed SSG-TFET with the conventional DGTFET, gate overlap on drain TFET (OGTFET) and gate underlap ...
Mingjun Liu, Qian Xie 0002, Shuang Xia, Zheng Wang 0050   +3 more
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Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors

Nanoscale, 2016
Multi-layer black phosphorus has emerged as a strong candidate owing to its high carrier mobility with most of the previous research work focused on its p-type properties. Very few studies have been performed on its n-type electronic characteristics which are important not only for the complementary operation for logic, but also crucial for ...
Xuefei, Li, Yuchen, Du, Mengwei, Si, Lingming, Yang, Sichao, Li, Tiaoyang, Li, Xiong, Xiong, Peide, Ye, Yanqing, Wu   +8 more
openaire   +2 more sources