Results 171 to 180 of about 2,236 (212)

Effects of Drain Doping Profile and Gate Structure on Ambipolar Current of TFET

2020 IEEE 3rd International Conference on Electronics Technology (ICET), 2020
In this paper, the effects of drain doping profile and gate structure on ambipolar behavior of tunnel field effect transistor (TFET) are investigated. The Gaussian doping drain region TFET (GD TFET) ambipolar current is lower than abrupt junction doping TFET.
Jie Li, Qian Xie, Anpeng Huang, Zheng Wang   +3 more
openaire   +1 more source

Exciplex current mechanism for ambipolar bilayer organic light emitting diodes

Applied Physics Letters, 2011
The effect of exciplex dynamics on the current in a bilayer organic light emitting diode with ambipolar injection is explored. Exciplex formation facilitates intermolecular electron-hole recombination across the interface. We discuss the characteristics of the exciplex recombination current with respect to different energy level alignments, interface ...
Feilong Liu, P. Paul Ruden, Ian H. Campbell, Darryl L. Smith   +3 more
openaire   +1 more source

Band-to-band tunneling limited ambipolar current in black phosphorus MOSFETs

2017 75th Annual Device Research Conference (DRC), 2017
Black phosphorus (BP) has emerged as a promising channel material for highly scaled transistors with a high mobility (1000 cm2/Vs), tunable band gap (0.3 eV–2.0 eV), and anisotropic effective mass [1]-[4] at ultra-thin body thicknesses. While devices with high performance in the ON-state have been demonstrated by using Schottky contacts, the ...
Matthew C. Robbins, Nazila Haratipour, Steven J. Koester   +2 more
openaire   +1 more source

The Hypothesis of Two-Sources on TFET’s Ambipolar Current and its Quantum Confinement Effect

2020 8th International Electrical Engineering Congress (iEECON), 2020
An innovative TFET called Double Symmetrical Source Tunnel FET (DSS-TFET) is put forward in this paper, which fosters higher I ON with smaller driving voltage as compared to conventional TFETs. The tunnelling area is considerably upgraded which increases the I ON , for smaller turn-on voltage.
Bijoy Goswami, Kousik Naskar, Sharmistha Shee kanra, Anup Day, Abir Jana, Subir Kumar Sarkar   +5 more
openaire   +1 more source

Current conduction in ambipolar organic field-effect transistors (OFETs)

SPIE Proceedings, 2007
Current conduction in organic field-effect transistors (OFETs) has attracted much attention. The most intriguing issue is that for most organic semiconductors only one carrier type is observed. To examine why this is so, effort has been spent to study ambipolar conduction in OFETs under strong gate bias.
openaire   +1 more source

Ambipolar diffusion along magnetic field lines in the presence of an electric current

Planetary and Space Science, 1971
Abstract The one-dimensional ambipolar diffusion parallel to the magnetic field is treated for the case of a plasma cloud imbedded in a weakly ionized gas with a homogeneous magnetic field. We distinguish between cloud ions and background ions. A constant electric current is allowed to flow from infinity through the cloud.
M. Scholer, G. Haerendel
openaire   +1 more source

Direct current-self-sustained non-ambipolar plasma at low pressure

Applied Physics Letters, 2013
For decades, non-ambipolar diffusion has been observed and studied in laboratory plasmas that contain a double layer. However, self-sustained non-ambipolar plasma has yet to be demonstrated. This article reports the method and results for achieving such a condition at low pressure, with a wide power range (as low as 6 W).
Zhiying Chen, Lee Chen, Merritt Funk
openaire   +1 more source

GAA CNT TFETs Structural Engineering: A Higher ON Current, Lower Ambipolarity

IEEE Transactions on Electron Devices, 2019
Based on the nonequilibrium Green’s function (NEGF) ballistic transport simulation, an optimized homojunction carbon nanotube (CNT) gate-all-around tunnel field effect transistor (GAA TFET) is proposed in this study. This TFET enhances the ON-state current and suppresses the ambipolarity extensively.
S. G. Shirazi, G. R. Karimi, S. Mirzakuchaki   +2 more
openaire   +1 more source

30-nm Tunnel FET With Improved Performance and Reduced Ambipolar Current

IEEE Transactions on Electron Devices, 2011
This paper presents the optimization of double-gate silicon (Si) tunnel field-effect transistors (TFETs). It shows that, for the heterodielectric structure, the ION current is boosted by correctly positioning the source with respect to the gate edge. The second booster used in this paper is the Si thickness that is tuned in order to maximize the ION ...
Costin Anghel, null Hraziia, Anju Gupta, Amara Amara, Andrei Vladimirescu   +4 more
openaire   +1 more source

Development of the ambipolar electric field in a compressed current sheet and the impact on magnetic reconnection

Journal of Plasma Physics
Satellite data analysis of a compressed gyro-scale current sheet prior to magnetic reconnection in the magnetotail shows that electrostatic lower hybrid waves localized to the region of a transverse ambipolar electric field at the centre of the current sheet are driven by $\boldsymbol{E} \times \boldsymbol{B}$ velocity shear
Ami M. DuBois, Chris Crabtree, Gurudas Ganguli   +2 more
openaire   +1 more source