Results 181 to 190 of about 3,294 (243)

Single ambipolar OECT-based inverter with volatility and nonvolatility on demand. [PDF]

open access: yesSci Adv
Cong S   +12 more
europepmc   +1 more source

Integrating Electric Ambipolar Effect for High-Performance Zinc Bromide Batteries. [PDF]

open access: yesNanomicro Lett
Li W   +11 more
europepmc   +1 more source

μ<sub>2T</sub>(n): a method for extracting the density dependent mobility in two-terminal nanodevices. [PDF]

open access: yesCommun Eng
Petersen CEN   +8 more
europepmc   +1 more source

Ambipolar Diffusion in Direct-Current Positive Column with Variations in Radius of Discharge Tube

open access: yesChinese Physics Letters, 2006
The ambipolar diffusion and argon ion mobility as functions of the reduced electric field and pressure times the tube radius are investigated in a weakly ionized non-uniform glow discharge plasma system. In particular, the variable cross section at the same discharge tube on the ambipolar diffusion coefficient shows a more noticeable effect than the ...
D Akbar, S Bilikmen
openaire   +2 more sources

Ambipolar Organic Tri‐Gate Transistor for Low‐Power Complementary Electronics

open access: yesAdvanced Materials, 2016
Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode ...
Fabrizio Torricelli   +2 more
exaly   +3 more sources

Suppressing Ambipolar Current in UTFET by Auxiliary Gate

Iranian Journal of Science and Technology, Transactions of Electrical Engineering, 2020
In this paper, a new U-shaped channel tunneling-based field-effect transistor (UTFET) with auxiliary gate above drain is proposed. The ambipolar current in the proposed is investigated, in which simulation results show that ambipolar current takes place, due to drain-to-drain tunneling similar to gate-induced drain leakage in conventional MOSFETs.
Kaveh Eyvazi, Mohammad Azim Karami
openaire   +1 more source

Methods to Reduce Ambipolar Current of Various TFET Structures: a Review

Silicon, 2021
As far as miniaturization of devices are being continue in semiconductor market, there are alternative option has been discovered by the researcher. It is well known that Metal Oxide Semiconductor (MOS) devices have vast applications in various emerging fields from medical to defense. However, there are certain drawbacks of MOSFET such as limited value
Shreyas Tiwari, Rajesh Saha
openaire   +1 more source

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