Results 211 to 220 of about 3,294 (243)

30-nm Tunnel FET With Improved Performance and Reduced Ambipolar Current

IEEE Transactions on Electron Devices, 2011
This paper presents the optimization of double-gate silicon (Si) tunnel field-effect transistors (TFETs). It shows that, for the heterodielectric structure, the ION current is boosted by correctly positioning the source with respect to the gate edge. The second booster used in this paper is the Si thickness that is tuned in order to maximize the ION ...
Costin Anghel, null Hraziia, Anju Gupta, Amara Amara, Andrei Vladimirescu   +4 more
openaire   +1 more source

Development of the ambipolar electric field in a compressed current sheet and the impact on magnetic reconnection

Journal of Plasma Physics
Satellite data analysis of a compressed gyro-scale current sheet prior to magnetic reconnection in the magnetotail shows that electrostatic lower hybrid waves localized to the region of a transverse ambipolar electric field at the centre of the current sheet are driven by $\boldsymbol{E} \times \boldsymbol{B}$ velocity shear
Ami M. DuBois, Chris Crabtree, Gurudas Ganguli   +2 more
openaire   +1 more source

Current conduction in ambipolar organic field-effect transistors (OFETs)

SPIE Proceedings, 2007
Current conduction in organic field-effect transistors (OFETs) has attracted much attention. The most intriguing issue is that for most organic semiconductors only one carrier type is observed. To examine why this is so, effort has been spent to study ambipolar conduction in OFETs under strong gate bias.
openaire   +1 more source

Suppression of ambipolar current in tunnel FETs using drain-pocket: Proposal and analysis

Superlattices and Microstructures, 2018
Abstract In this paper, we investigate the impact of a drain-pocket (DP) adjacent to the drain region in Tunnel Field-Effect Transistors (TFETs) to effectively suppress the ambipolar current. Using calibrated two-dimensional device simulation, we examine the impact of DP in Double Gate TFET (DGTFET). We demonstrate the superiority of the DP technique
Shelly Garg, Sneh Saurabh
openaire   +1 more source

Investigation on Ambipolar Current Suppression in Tunnel FETs

2023
Mohammad Ehteshamuddin, S. Manikandan, Adhithan Pon   +2 more
openaire   +1 more source

Investigation of Dual Metal Gate Schottky Barrier MOSFET for Suppression of Ambipolar Current

IETE Journal of Research, 2020
In this paper, I have presented a simulation study to suppress the ambipolar current of the Schottky Barrier (SB) MOSFET. In this work, I have used a dual metal gate device structure.
openaire   +1 more source

Controlling the Ambipolar current by using Graded drain doped TFET

2023 International Conference on Device Intelligence, Computing and Communication Technologies, (DICCT), 2023
Priyanka Dhiman, Kavindra Kumar Kavi, Ratneshwar Kumar Ratnesh, Abhishek Kumar   +3 more
openaire   +1 more source

The role of ambipolar phenomena in the mechanism of the post-zero current in vacuum circuit breakers

Proceedings of the IEEE, 1967
This paper attempts to develop a theory of the role of ambipolar phenomena in the mechanism of the post-zero current in high-current vacuum circuit breakers on a more general and more accurate basis that can be found in the literature. Several cases of interest are compared and discussed and their probable range of validity established.
openaire   +1 more source

Analysis of ON Current and Ambipolar Current for Source Pocket Gate-Drain Underlap Double Gate Tunnel Field Effect Transistor

2022 IEEE International Symposium on Smart Electronic Systems (iSES), 2022
K. Murali Chandra Babu, Ekta Goel
openaire   +1 more source

Multi-Bit Analog Transmission Enabled by Electrostatically Reconfigurable Ambipolar and Anti-Ambipolar Transport

ACS Nano, 2021
Kartikey Thakar, Saurabh Lodha
exaly