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A junctionless inverted-TFET with increased ON-current and reduced ambipolarity
2017 8th IEEE Annual Information Technology, Electronics and Mobile Communication Conference (IEMCON), 2017In this paper, we simulate and investigate a novel Tunnel Field-Effect Transistor (TFET) using the charge plasma concept on the source side. Herein, an inverted p-type source is created to form a p+-n tunneling diode structure on a uniformly n-type doped thin silicon film, hence named, Inverted-TFET (I-TFET).
M. Ehteshamuddin +3 more
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A Novel Step-shaped Gate Tunnel FET with Low Ambipolar Current
2019 2nd International Symposium on Devices, Circuits and Systems (ISDCS), 2019In this paper, a novel TFET architecture named the step-shaped gate TFET (SSG-TFET) has been proposed for the suppression of the ambipolar current. By adjusting the energy band, the SSG-TFET can evidently reduce the ambipolar current. We compare the proposed SSG-TFET with the conventional DGTFET, gate overlap on drain TFET (OGTFET) and gate underlap ...
Mingjun Liu +3 more
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Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors
Nanoscale, 2016Multi-layer black phosphorus has emerged as a strong candidate owing to its high carrier mobility with most of the previous research work focused on its p-type properties. Very few studies have been performed on its n-type electronic characteristics which are important not only for the complementary operation for logic, but also crucial for ...
Xuefei, Li +8 more
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Design and Analysis of ION and Ambipolar Current for Vertical TFET
2020This draft investigates about the vertical tunnel FET (VTFET) with heterostructure at channel/source interface of SiGe layer using Sentaurus Technology computer-aided design simulation. As MOSFET is scaled down to the nanoscale dimensions, the problems arise such as short channel effects, the I-OFF leakage current grow drastically because to the non ...
Shailendra Singh, Balwinder Raj
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Kinetics of ambipolar diffusion and drift currents of nonequilibrium carriers in semiconductors
Semiconductors, 2003A radically new method is suggested for drift mobility determination in semiconductors; this method is based on the measurement of how much time it takes to attain a peak value of the diffusion-drift current of nonequilibrium charge carriers excited by short pulses of light from a high-absorption region through the one of the contacts.
A. A. Abdullaev +2 more
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Tapered-Shape Channel Engineering for Suppression of Ambipolar Current in TFET
2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM), 2020This paper proposes a novel Si-TFET based on a tapered channel structure. The taper-channel design presented in this work provides a higher thickness at the source side than at the drain side, whereas the gate oxide is lesser at the source than at the drain side.
Yasmin Morgan +3 more
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Controlling ambipolar current of dopingless tunnel field-effect transistor
Applied Physics A, 2018Ambipolarity in tunnel field-effect transistor (TFET) is a subject of grave concern in the current scenario of the semiconductor industry as this property of device limits its usability in CMOS circuit applications. In this concern, this paper presents a new approach to suppress the ambipolar behavior of dopingless TFET (DL TFET) by controlling the ...
Sukeshni Tirkey +2 more
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An analysis on the ambipolar current in Si double-gate tunnel FETs
Solid-State Electronics, 2012Abstract This work presents a study on the influence of the design parameters on the ambipolar current (IAMB) of the Tunnel Field Effect Transistors (TFETs). Using numerical device simulations, IAMB is reduced progressively by underlapping the gate and the drain, by using low-k spacers and by placing the contacts in the top and bottom configuration ...
Hraziia +3 more
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Suppression of Ambipolar current in Tunnel Field-Effect Transistor using Field-Plate
2020 24th International Symposium on VLSI Design and Test (VDAT), 2020This paper proposes a tunnel field-effect transistor (TFET) with an additional field-plate over the drain region in the device. Using 2-D device simulations, it is shown that, by introducing a field-plate with an appropriate work function, placed on the top of the drain region, the ambipolar current of the device can be effectively suppressed ...
Subhadip Poria +2 more
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Study of Ambipolar Current of a Steep Slope Tunneling FET with Drain Underlap
2020 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT), 2020The tunneling field effect transistor is basically a gated p-i-n diode, is recently under rising interest due to its potential to deliver steep on-off slopes and its ability in operating at supply voltages below 0.5 V. We present simulation results of double gate pocket doped silicon n-channel Tunnel FET on the investigation of the influences of drain ...
Satya Gopal Dinda, S. Sundar Kumar Iyer
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