Results 201 to 210 of about 3,294 (243)

Insights on the Origination of Ambipolar Photocurrent of Ferroelectric and the Improvement of Photoanodic Current

Journal of The Electrochemical Society, 2019
Modulating the photoelectrochemical (PEC) reactions on one photoelectrode is of significance to the photoelectrochemistry. Herein, we fabricate ferroelectric photoelectrode based on Pb(Zr, Ti)O3 (PZT) without polarization that shows tunable PEC reactions in the form of ambipolar photocurrent, and demonstrate that the interesting behavior originates ...
Yakun Wang, Jun Liu, Yanbin Huang, Zhan Wang, Qicong Li, Shizhong Yue, Kong Liu, Shaolong Yan, Mingsheng Liu, Dawei Cao, Yan Li, Zhijie Wang, Xinrong Yang, Shengchun Qu   +13 more
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Effects of Drain Doping Profile and Gate Structure on Ambipolar Current of TFET

2020 IEEE 3rd International Conference on Electronics Technology (ICET), 2020
In this paper, the effects of drain doping profile and gate structure on ambipolar behavior of tunnel field effect transistor (TFET) are investigated. The Gaussian doping drain region TFET (GD TFET) ambipolar current is lower than abrupt junction doping TFET.
Jie Li, Qian Xie, Anpeng Huang, Zheng Wang   +3 more
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Ambipolar mobility and injection currents in semiconductors with deep traps

Physica Status Solidi (a), 1973
The ambipolar mobility of charge carriers is discussed for compensated semiconductors with deep single-level traps; its influence on the double injection current is theoretically investigated. The I–U curve of a long sample is considered under the simultaneous variation of the ambipolar mobility and of the lifetime.
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Compressed Current Sheets in the Magnetotail: Importance of the Ambipolar Electric Field

2022
Micro-scale features are now being resolved by NASA’s Magnetospheric Multi-Scale (MMS) mission, which means for the first time, we are able to investigate thin and non-ideal current sheets (i.e. current sheets that cannot be explained by the Harris equilibrium model) in detail and assess their role in magnetic reconnection. We use MMS satellite data to
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Exciplex current mechanism for ambipolar bilayer organic light emitting diodes

Applied Physics Letters, 2011
The effect of exciplex dynamics on the current in a bilayer organic light emitting diode with ambipolar injection is explored. Exciplex formation facilitates intermolecular electron-hole recombination across the interface. We discuss the characteristics of the exciplex recombination current with respect to different energy level alignments, interface ...
Feilong Liu, P. Paul Ruden, Ian H. Campbell, Darryl L. Smith   +3 more
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Band-to-band tunneling limited ambipolar current in black phosphorus MOSFETs

2017 75th Annual Device Research Conference (DRC), 2017
Black phosphorus (BP) has emerged as a promising channel material for highly scaled transistors with a high mobility (1000 cm2/Vs), tunable band gap (0.3 eV–2.0 eV), and anisotropic effective mass [1]-[4] at ultra-thin body thicknesses. While devices with high performance in the ON-state have been demonstrated by using Schottky contacts, the ...
Matthew C. Robbins, Nazila Haratipour, Steven J. Koester   +2 more
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Ambipolar diffusion along magnetic field lines in the presence of an electric current

Planetary and Space Science, 1971
Abstract The one-dimensional ambipolar diffusion parallel to the magnetic field is treated for the case of a plasma cloud imbedded in a weakly ionized gas with a homogeneous magnetic field. We distinguish between cloud ions and background ions. A constant electric current is allowed to flow from infinity through the cloud.
M. Scholer, G. Haerendel
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Direct current-self-sustained non-ambipolar plasma at low pressure

Applied Physics Letters, 2013
For decades, non-ambipolar diffusion has been observed and studied in laboratory plasmas that contain a double layer. However, self-sustained non-ambipolar plasma has yet to be demonstrated. This article reports the method and results for achieving such a condition at low pressure, with a wide power range (as low as 6 W).
Zhiying Chen, Lee Chen, Merritt Funk
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GAA CNT TFETs Structural Engineering: A Higher ON Current, Lower Ambipolarity

IEEE Transactions on Electron Devices, 2019
Based on the nonequilibrium Green’s function (NEGF) ballistic transport simulation, an optimized homojunction carbon nanotube (CNT) gate-all-around tunnel field effect transistor (GAA TFET) is proposed in this study. This TFET enhances the ON-state current and suppresses the ambipolarity extensively.
S. G. Shirazi, G. R. Karimi, S. Mirzakuchaki   +2 more
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The Hypothesis of Two-Sources on TFET’s Ambipolar Current and its Quantum Confinement Effect

2020 8th International Electrical Engineering Congress (iEECON), 2020
An innovative TFET called Double Symmetrical Source Tunnel FET (DSS-TFET) is put forward in this paper, which fosters higher I ON with smaller driving voltage as compared to conventional TFETs. The tunnelling area is considerably upgraded which increases the I ON , for smaller turn-on voltage.
Bijoy Goswami, Kousik Naskar, Sharmistha Shee kanra, Anup Day, Abir Jana, Subir Kumar Sarkar   +5 more
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