Results 161 to 170 of about 2,236 (212)

Design and Analysis of ION and Ambipolar Current for Vertical TFET

2020
This draft investigates about the vertical tunnel FET (VTFET) with heterostructure at channel/source interface of SiGe layer using Sentaurus Technology computer-aided design simulation. As MOSFET is scaled down to the nanoscale dimensions, the problems arise such as short channel effects, the I-OFF leakage current grow drastically because to the non ...
Shailendra Singh, Balwinder Raj
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Kinetics of ambipolar diffusion and drift currents of nonequilibrium carriers in semiconductors

Semiconductors, 2003
A radically new method is suggested for drift mobility determination in semiconductors; this method is based on the measurement of how much time it takes to attain a peak value of the diffusion-drift current of nonequilibrium charge carriers excited by short pulses of light from a high-absorption region through the one of the contacts.
A. A. Abdullaev, A. R. Aliev, I. K. Kamilov   +2 more
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Tapered-Shape Channel Engineering for Suppression of Ambipolar Current in TFET

2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM), 2020
This paper proposes a novel Si-TFET based on a tapered channel structure. The taper-channel design presented in this work provides a higher thickness at the source side than at the drain side, whereas the gate oxide is lesser at the source than at the drain side.
Yasmin Morgan, Mohamed Abouelatta, Mohamed El-Banna, Ahmed Shaker   +3 more
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Controlling ambipolar current of dopingless tunnel field-effect transistor

Applied Physics A, 2018
Ambipolarity in tunnel field-effect transistor (TFET) is a subject of grave concern in the current scenario of the semiconductor industry as this property of device limits its usability in CMOS circuit applications. In this concern, this paper presents a new approach to suppress the ambipolar behavior of dopingless TFET (DL TFET) by controlling the ...
Sukeshni Tirkey, Dharmendra Singh Yadav, Dheeraj Sharma   +2 more
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Compressed Current Sheets in the Magnetotail: Importance of the Ambipolar Electric Field

2022
Micro-scale features are now being resolved by NASA’s Magnetospheric Multi-Scale (MMS) mission, which means for the first time, we are able to investigate thin and non-ideal current sheets (i.e. current sheets that cannot be explained by the Harris equilibrium model) in detail and assess their role in magnetic reconnection. We use MMS satellite data to
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Suppression of Ambipolar current in Tunnel Field-Effect Transistor using Field-Plate

2020 24th International Symposium on VLSI Design and Test (VDAT), 2020
This paper proposes a tunnel field-effect transistor (TFET) with an additional field-plate over the drain region in the device. Using 2-D device simulations, it is shown that, by introducing a field-plate with an appropriate work function, placed on the top of the drain region, the ambipolar current of the device can be effectively suppressed ...
Subhadip Poria, Shelly Garg, Sneh Saurabh   +2 more
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Insights on the Origination of Ambipolar Photocurrent of Ferroelectric and the Improvement of Photoanodic Current

Journal of The Electrochemical Society, 2019
Modulating the photoelectrochemical (PEC) reactions on one photoelectrode is of significance to the photoelectrochemistry. Herein, we fabricate ferroelectric photoelectrode based on Pb(Zr, Ti)O3 (PZT) without polarization that shows tunable PEC reactions in the form of ambipolar photocurrent, and demonstrate that the interesting behavior originates ...
Yakun Wang, Jun Liu, Yanbin Huang, Zhan Wang, Qicong Li, Shizhong Yue, Kong Liu, Shaolong Yan, Mingsheng Liu, Dawei Cao, Yan Li, Zhijie Wang, Xinrong Yang, Shengchun Qu   +13 more
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Ambipolar mobility and injection currents in semiconductors with deep traps

Physica Status Solidi (a), 1973
The ambipolar mobility of charge carriers is discussed for compensated semiconductors with deep single-level traps; its influence on the double injection current is theoretically investigated. The I–U curve of a long sample is considered under the simultaneous variation of the ambipolar mobility and of the lifetime.
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An analysis on the ambipolar current in Si double-gate tunnel FETs

Solid-State Electronics, 2012
Abstract This work presents a study on the influence of the design parameters on the ambipolar current (IAMB) of the Tunnel Field Effect Transistors (TFETs). Using numerical device simulations, IAMB is reduced progressively by underlapping the gate and the drain, by using low-k spacers and by placing the contacts in the top and bottom configuration ...
Hraziia, Vladimirescu A., Amara A., Anghel C.   +3 more
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Study of Ambipolar Current of a Steep Slope Tunneling FET with Drain Underlap

2020 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT), 2020
The tunneling field effect transistor is basically a gated p-i-n diode, is recently under rising interest due to its potential to deliver steep on-off slopes and its ability in operating at supply voltages below 0.5 V. We present simulation results of double gate pocket doped silicon n-channel Tunnel FET on the investigation of the influences of drain ...
Satya Gopal Dinda, S. Sundar Kumar Iyer
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