Results 11 to 20 of about 51,918 (342)
Simulative Researching of a 1200V SiC Trench MOSFET With an Enhanced Vertical RESURF Effect
IEEE Journal of the Electron Devices Society, 2020 A SiC trench MOSFET with an enhanced vertical RESURF effect is proposed and analyzed in this article. The device features a deep oxide trench surrounded by a P-type doping layer at the source-side. With the assistant depletion effect of the P-type layer,
Han Yang +4 more
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A 1.2V −55°C‐125°C ultra‐low noise bandgap voltage reference without start‐up circuit
Electronics Letters, 2023 This paper proposes a novel bandgap voltage reference (BGR) with low temperature coefficient, ultra‐low noise and without start‐up circuit. Designed in a TSMC 180‐nm CMOS technology, this bandgap voltage reference operates in the temperature range of −55
Linzhi Tao, Haoyu Zhuang, Qiang Li
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A novel bandgap voltage reference based on folding compensation
Electronics Letters, 2023 This letter proposes a novel bandgap reference circuit that utilizes both curvature and folding compensation to achieve a temperature coefficient (TC) of 2.23 ppm/°C.
Mingyu Liu +4 more
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An expandable 36‐channel neural recording ASIC with modular digital pixel design technique
Electronics Letters, 2023 This paper presents the design and implementation of an expandable neural recording ASIC for multiple‐channel neural recording applications. The ASIC consists of 36 modular digital pixels (MDPs) and a global digital controller (GDC) circuit. Each MDP has
Quan Wang +8 more
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Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars
Results in Physics, 2020 To reduce specific on-resistance (Ron,sp) of power devices, a novel SOI (silicon-on-insulator) trench gate LDMOS with heavily doping L-shaped P/N pillars and vertical dual-trench-gates is proposed in this paper, and its physical mechanism and electrical ...
Jingwei Guo +6 more
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Dependable Digitally-Assisted Mixed-Signal IPs Based on Integrated Self-Test & Self-Calibration [PDF]
, 2010 Heterogeneous SoC devices, including sensors, analogue and mixed-signal front-end circuits and the availability of massive digital processing capability, are being increasingly used in safety-critical applications like in the automotive, medical, and the
Kerkhoff, Hans G., Wan, Jinbo
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New full‐wave rectifier based on modified voltage differencing transconductance amplifier
IET Circuits, Devices and Systems, 2022 A full‐wave rectifier based on a modified voltage differencing transconductance amplifier‐MVDTA and four n‐MOS transistors (or inverting full‐wave rectifier), with no use of any passive elements is proposed in this paper.
Predrag B. Petrović
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Results in Physics, 2020 Double silicon drift layers are used to reduce the specific on-resistance (Ron,sp) for a trench-gate-integrated lateral double-diffused MOSFET (DDL TG LDMOS) based on SOI technology in this paper.
Yuan Wang +7 more
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A low‐voltage and low‐power current‐mode winner‐take‐all (maximum) circuit
Electronics Letters, 2023 In this Letter, a new low‐voltage and low‐power current‐mode winner‐take‐all (WTA) circuit is proposed. The proposed circuit is able to operate with a low supply voltage requirement while exhibiting a high accuracy.
Hossein Yaghoobzadeh Shadmehri +3 more
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IEEE Access, 2019 The theoretical analysis of breakdown model for a deep trench superjunction (DT-SJ) SiC VDMOS is presented in this paper. The vertical electric field distribution is derived by the electric field decomposition.
Tao Liu +7 more
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