Results 31 to 40 of about 280,313 (347)

Atomic Layer Deposition of Rhenium Disulfide [PDF]

Advanced Materials, 2018
Abstract2D materials research is advancing rapidly as various new “beyond graphene” materials are fabricated, their properties studied, and materials tested in various applications. Rhenium disulfide is one of the 2D transition metal dichalcogenides that has recently shown to possess extraordinary properties such as that it is not limited by the strict
Jani Hämäläinen, Miika Mattinen, Kenichiro Mizohata, Kristoffer Meinander, Marko Vehkamäki, Jyrki Räisänen, Mikko Ritala, Markku Leskelä   +7 more
openaire   +4 more sources

Light Yield Enhancement of 157-Gadolinium Oxysulfide Scintillator Screens for the High-Resolution Neutron Imaging

MethodsX, 2019
This paper reports on light yield enhancement of terbium-doped gadolinium oxysulfide based scintillator screens achieved by coating their substrates with thin layers of a high density and high atomic number material.
Jan Crha, Joan Vila-Comamala, Eberhard Lehmann, Christian David, Pavel Trtik   +4 more
doaj   +1 more source

Influence of NiO ALD Coatings on the Field Emission Characteristic of CNT Arrays

Nanomaterials, 2022
The paper presents a study of a large-area field emitter based on a composite of vertically aligned carbon nanotubes covered with a continuous and conformal layer of nickel oxide by the atomic layer deposition method.
Maksim A. Chumak, Leonid A. Filatov, Ilya S. Ezhov, Anatoly G. Kolosko, Sergey V. Filippov, Eugeni O. Popov, Maxim Yu. Maximov   +6 more
doaj   +1 more source

Ultrathin Oxide Films by Atomic Layer Deposition on Graphene [PDF]

, 2012
In this paper, a method is presented to create and characterize mechanically robust, free standing, ultrathin, oxide films with controlled, nanometer-scale thickness using Atomic Layer Deposition (ALD) on graphene.
Andrew S. Cavanagh, Balandin A. A., Bunch J. S., Bunch J. S., Cavanagh A. S., Coleman J. N., Davidson B. D., Dean C. R., Dillon A. C., Elam J. W., Farmer D. B., Geim A. K., Groner M. D., Hencky H., Huang P. Y., J. Scott Bunch, Jen S.-H., Jonathan J. Travis, Koenig S. P., Lee C., Leskelä M., Leskelä M., Li X., Luda Wang, Miller D. C., Novoselov K. S., Novoselov K. S., Ott A. W., Ott A. W., Pinshane Y. Huang, Ritala M., Rogers J. A., Steven M. George, Steven P. Koenig, Suk J. W., Tapily K., Tripp M. K., Wang X., Williams J. R., Xinghui Liu, Yoneoka S., Zhan Y., Zhang Y. B.   +42 more
core   +1 more source

Atomic layer deposition of functional multicomponent oxides

APL Materials, 2019
Advances in the fabrication of multicomponent oxide thin films are crucial to prepare specific compositions with precise structures and controlled interfaces.
Mariona Coll, Mari Napari
doaj   +1 more source

Special Issue “ALD Technique for Functional Coatings of Nanostructured Materials”

Nanomaterials, 2022
Atomic layer deposition (ALD) is a vapor-phase technique that consists of the alternation of separated self-limiting surface reactions, which enable film thickness to be accurately controlled at the angstrom level, based on the former atomic layer ...
Javier Garcia Fernández, Victor Vega Martínez, Victor Manuel de la Prida Pidal   +2 more
doaj   +1 more source

Atomic Layer Deposition of AlN on Graphene

physica status solidi (a), 2021
Graphene is a material with great promise for several applications within electronics. However, using graphene in any such application requires its integration in a stack of thin layers of materials. The ideal structure of graphene has a fully saturated surface without any binding sites for chemisorption of growth species, making film growth on ...
Milena Beshkova, Petro Deminskyi, Chih‐Wei Hsu, Ivan Shtepliuk, Ivalina Avramova, Rositsa Yakimova, Henrik Pedersen   +6 more
openaire   +3 more sources

Characteristics of Hf_0.5Zr_0.5O₂ Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory

Nanomaterials, 2023
Hf0.5Zr0.5O2 (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process.
Da Hee Hong, Jae Hoon Yoo, Won Ji Park, So Won Kim, Jong Hwan Kim, Sae Hoon Uhm, Hee Chul Lee   +6 more
doaj   +1 more source

Atomic and Molecular Layer Deposition as Surface Engineering Techniques for Emerging Alkali Metal Rechargeable Batteries

Molecules, 2022
Alkali metals (lithium, sodium, and potassium) are promising as anodes in emerging rechargeable batteries, ascribed to their high capacity or abundance.
Matthew Sullivan, Peng Tang, Xiangbo Meng   +2 more
doaj   +1 more source

Seeding-Layer-Free Deposition of High-k Dielectric on CVD Graphene for Enhanced Gate Control Ability

Crystals, 2022
The gate insulator is one of the most crucial factors determining the performance of a graphene field effect transistor (GFET). Good electrostatic control of the conduction channel by gate voltage requires thin gate oxides.
Yunpeng Yan, Songang Peng, Zhi Jin, Dayong Zhang, Jingyuan Shi   +4 more
doaj   +1 more source