Results 91 to 100 of about 29,849 (211)

Area-selective atomic layer deposition on 2D monolayer lateral superlattices

Nature Communications
The advanced patterning process is the basis of integration technology to realize the development of next-generation high-speed, low-power consumption devices.
Jeongwon Park, Seung Jae Kwak, Sumin Kang, Saeyoung Oh, Bongki Shin, Gichang Noh, Tae Soo Kim, Changhwan Kim, Hyeonbin Park, Seung Hoon Oh, Woojin Kang, Namwook Hur, Hyun-Jun Chai, Minsoo Kang, Seongdae Kwon, Jaehyun Lee, Yongjoon Lee, Eoram Moon, Chuqiao Shi, Jun Lou, Won Bo Lee, Joon Young Kwak, Heejun Yang, Taek-Mo Chung, Taeyong Eom, Joonki Suh, Yimo Han, Hu Young Jeong, YongJoo Kim, Kibum Kang   +29 more
doaj   +1 more source

Advances in atmospheric-pressure particle atomic layer deposition

Gongneng cailiao yu qijian xuebao
Atmospheric pressure particle atomic layer deposition (AP-PALD) shows promising potentials in the fields of energy and catalytic materials due to its ability in precisely modifying the surfaces of functional materials operated at atmospheric or near ...
Guanghui YAN, Gaoshan HUANG, Xueqiang LU, Xueqin ZUO, Dongdong MI, Guoxiang CHEN, Yi OUYANG, Xiangzhong CHEN, Zhihao BAO, Yongfeng MEI, Jianjun SHI   +10 more
doaj   +1 more source

Atomic Layer Deposition Josephson Junctions for Cryogenic Circuit Applications [PDF]

Superconducting-insulating-superconducting (SIS) trilayers have been produced for Josephson Junction fabrication by thermal atomic layer deposition (ALD) processes. The trilayers are composed of alternating layers of Ti0.4N0.6/Al2O3/ Ti0.4N0.6, deposited
Jhabvala, Christine A., Nagler, Peter C., Nagler, Peter C.   +2 more
core   +1 more source

IMPROVEMENTS OF ATOMIC LAYER DEPOSITION (ALD) DEVICES AND TYPES

, 2018
The products obtained by changing the surfaceproperties of the materials can be given different functionalities besidestheir own properties. Developments in surface technologies also provide thedevelopment of obtain new products and manufacturing processes.
UĞUR, Alper, AY, Nuran
openaire   +2 more sources

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures. [PDF]

, 2015
Effective passivation of interface defects in high-k metal oxide/Ge gate stacks is a longstanding goal of research on germanium metal-oxide-semiconductor devices. In this paper, we use photoelectron spectroscopy to probe the formation of a GeO2 interface

core   +1 more source

Structure and Properties of ZnO Coatings Obtained by Atomic Layer Deposition (ALD) Method on a Cr-Ni-Mo Steel Substrate Type. [PDF]

Materials (Basel), 2020
Staszuk M, Pakuła D, Reimann Ł, Król M, Basiaga M, Mysłek D, Kříž A.   +6 more
europepmc   +1 more source

Advances in Atomic Layer Deposition (ALD) Nanolaminate Synthesis of Thermoelectric Films in Porous Templates for Improved Seebeck Coefficient. [PDF]

Materials (Basel), 2020
Chen X, Baumgart H.
europepmc   +1 more source

Ab-initio Study of the Trimethylaluminum Atomic Layer Deposition Process on Carbon Nanotubes - An Alternative Initial Step

, 2017
Electronic applications of carbon nanotubes (CNTs) require the deposition of dielectric films on the tubes while conserving their excellent electronic properties.
Friedrich, J., Förster, A., Schuster, J., Wagner, C.   +3 more
core   +1 more source

Properties and characterization of ALD grown dielectric oxides for MIS structures

, 2011
We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD).
Dietl, T., Gieraltowska, S., Godlewski, M., Guziewicz, E., Luka, G., Lusakowska, E., Sawicki, M., Sztenkiel, D., Wachnicki, L., Witkowski, B. S.   +9 more
core   +1 more source

Optimizing Atomic Layer Deposition Processes with Nanowire‐Assisted TEM Analysis

Advanced Materials Interfaces
Atomic layer deposition (ALD) is one of the premier methods to synthesize ultra‐thin materials on complex surfaces. The technique allows for precise control of the thickness down to single atomic layers, while at the same time providing uniform coverage ...
Peter Schweizer, Lilian M. Vogl, Xavier Maeder, Ivo Utke, Johann Michler   +4 more
doaj   +1 more source