Results 31 to 40 of about 29,849 (211)

Fabrication of Nb/Al2O3/Nb Josephson Junctions using in situ Magnetron Sputtering and Atomic Layer Deposition

, 2013
Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al2O3 tunnel barriers in ...
Elliot, Alan J., Ewing, Daniel J., Han, Siyuan, Lewis, Rupert M., Lu, Rongtao, Mao, Bo, Schulze, Heidi M., Talvacchio, John, Wille, Logan, Wu, Judy Z., Xue, G. M., Yu, H. F., Zhao, S. P.   +12 more
core   +1 more source

Application of a Pd-TiO2 nanotube/Ti electrode prepared by atomic layer deposition to reductive dechlorination of trichloroethylene

Electrochemistry Communications, 2019
Trichloroethylene (TCE) is a toxic carcinogen. Electrocatalytic hydrodechlorination is a very effective and safe method for degrading TCE and does not produce any secondary pollution.
Jueming Lu, JianGuo Bao, Xueshi Lu, Dan Zheng, Xiaobin Li   +4 more
doaj   +1 more source

Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

Nanoscale Research Letters, 2019
s High-k metal oxide films are vital for the future development of microelectronics technology. In this work, ZrO2 films were grown on silicon by atomic layer deposition (ALD) using tetrakis(dimethylamido)zirconium and ozone as precursors. The relatively
Junqing Liu, Junpeng Li, Jianzhuo Wu, Jiaming Sun   +3 more
doaj   +1 more source

High‐Performance Graphene‐Dielectric Interface by UV‐Assisted Atomic Layer Deposition for Graphene Field Effect Transistor

Advanced Electronic Materials, 2023
The deposition of high‐quality dielectric films on graphene surfaces is crucial in fabricating high‐performance graphene‐based electronics. In this study, the first application of UV‐assisted atomic layer deposition (UV‐ALD) to graphene surfaces and the ...
Geonwoo Park, Dohyun Go, Sungchan Jo, Tae Hoon Lee, Jeong Woo Shin, Jihwan An   +5 more
doaj   +1 more source

Ultrathin Oxide Films by Atomic Layer Deposition on Graphene [PDF]

, 2012
In this paper, a method is presented to create and characterize mechanically robust, free standing, ultrathin, oxide films with controlled, nanometer-scale thickness using Atomic Layer Deposition (ALD) on graphene.
Andrew S. Cavanagh, Balandin A. A., Bunch J. S., Bunch J. S., Cavanagh A. S., Coleman J. N., Davidson B. D., Dean C. R., Dillon A. C., Elam J. W., Farmer D. B., Geim A. K., Groner M. D., Hencky H., Huang P. Y., J. Scott Bunch, Jen S.-H., Jonathan J. Travis, Koenig S. P., Lee C., Leskelä M., Leskelä M., Li X., Luda Wang, Miller D. C., Novoselov K. S., Novoselov K. S., Ott A. W., Ott A. W., Pinshane Y. Huang, Ritala M., Rogers J. A., Steven M. George, Steven P. Koenig, Suk J. W., Tapily K., Tripp M. K., Wang X., Williams J. R., Xinghui Liu, Yoneoka S., Zhan Y., Zhang Y. B.   +42 more
core   +1 more source

Efficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer

Advanced Science, 2018
Planar perovskite solar cells using low‐temperature atomic layer deposition (ALD) of the SnO2 electron transporting layer (ETL), with excellent electron extraction and hole‐blocking ability, offer significant advantages compared with high‐temperature ...
Yonghui Lee, Seunghwan Lee, Gabseok Seo, Sanghyun Paek, Kyung Taek Cho, Aron J. Huckaba, Marco Calizzi, Dong‐won Choi, Jin‐Seong Park, Dongwook Lee, Hyo Joong Lee, Abdullah M. Asiri, Mohammad Khaja Nazeeruddin   +12 more
doaj   +1 more source

ALD grown zinc oxide with controllable electrical properties

, 2012
The paper presents results for zinc oxide films grown at low temperature regime by Atomic Layer Deposition (ALD). We discuss electrical properties of such films and show that low temperature deposition results in oxygen-rich ZnO layers in which free ...
Gieraltowska, S., Godlewski, M., Guziewicz, E., Jablonski, A., Jakiela, R., Krajewski, T. A., Krawczyk, M., Lisowski, W., Luka, G., Sobczak, J. W., Stonert, A., Wachnicki, L.   +11 more
core   +1 more source

Advances in the application of atomic layer deposition in gas sensors

Gongneng cailiao yu qijian xuebao
Atomic layer deposition (ALD) represents a high-precision thin film deposition technique, distinguished by its sub-nanometer thickness control, superior uniformity, and unique three-dimensional conformality.
Fayu SONG, Jingyuan ZHANG, Weijin LI, Min TU   +3 more
doaj   +1 more source

Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures

AIP Advances, 2020
In this paper, we report on an interface dipole modulation (IDM) loss occurring in HfO2/atomically thin TiO2/SiO2 stack structures prepared by atomic layer deposition (ALD).
Shutaro Asanuma, Kyoko Sumita, Yusuke Miyaguchi, Kazumasa Horita, Takehito Jimbo, Kazuya Saito, Noriyuki Miyata   +6 more
doaj   +1 more source

Atomic Layer Deposition of \(Sc_2O_3\) for Passivating AlGaN/GaN High Electron Mobility Transistor Devices [PDF]

, 2012
Polycrystalline, partially epitaxial \(Sc_2O_3\) films were grown on AlGaN/GaN substrates by atomic layer deposition (ALD). With this ALD \(Sc_2O_3\) film as the insulator layer, the \(Sc_2O_3\)/AlGaN/GaN metal-insulator-semiconductor high electron ...
Gordon, Roy Gerald, Lou, Xiabing, Molnar, Richard J., Palacios, Tomás, Saadat, Omair I., Wang, Xinwei, Xi, Bin   +6 more
core   +1 more source