Results 61 to 70 of about 29,849 (211)

Increasing the stability of DNA nanostructure templates by atomic layer deposition of Al2O3 and its application in imprinting lithography

Beilstein Journal of Nanotechnology, 2017
We present a method to increase the stability of DNA nanostructure templates through conformal coating with a nanometer-thin protective inorganic oxide layer created using atomic layer deposition (ALD).
Hyojeong Kim, Kristin Arbutina, Anqin Xu, Haitao Liu   +3 more
doaj   +1 more source

Atomic Layer Deposition (ALD) to Mitigate Tin Whisker Growth and Corrosion Issues on Printed Circuit Board Assemblies [PDF]

, 2019
This paper presents the results of a research program set up to evaluate atomic layer deposition (ALD) conformal coatings as a method of mitigating the growth of tin whiskers from printed circuit board assemblies.
B Horváth, B Illés, B Illés, B Illés, B Illés, C-H Su, DM Haspel, E Chason, E Chason, E Chason, E Chason, E Härkönen, Geoffrey D. Wilcox, Jing Wang, JS Ponraj, Jussi Hokka, KS Kim, Liang Wu, M Sun, MA Ashworth, Mark A. Ashworth, Marko Pudas, N Jadhav, Paul Collander, RW Johnson, S Han, SH Liu, SM George, Terho Kutilainen, Tero Lehto, VG Karpov, W Fox, WS Hong, YW Lin, Z Mahim   +34 more
core   +2 more sources

Passivation effects of atomic-layer-deposited aluminum oxide

EPJ Photovoltaics, 2013
Atomic-layer-deposited (ALD) aluminum oxide (Al2O3) has recently demonstrated an excellent surface passivation for both n- and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Qf ~ 1012−1013 cm-2) in combination with a low ...
Kotipalli R., Delamare R., Poncelet O., Tang X., Francis L. A., Flandre D.   +5 more
doaj   +1 more source

Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiON/Al2O3

AIP Advances, 2020
The fabrication of a single-crystal hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistor (MOSFET) with HfSiON/Al2O3 bilayer dielectric has been carried out. HfSiON and Al2O3 layers were deposited by sputtering-deposition (SD) and
Jibran Hussain, Haris Naeem Abbasi, Wei Wang, Yan-Feng Wang, Ruozheng Wang, Hong-Xing Wang   +5 more
doaj   +1 more source

Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition

, 2013
A tunneling spectroscopy study is presented of superconducting MoN and Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding critical ...
Altin, Serdar, Becker, Nicholas G., Cao, Chaoyue, Claus, Helmut, Groll, Nickolas, Klug, Jeffrey A., Pellin, Michael J., Proslier, Thomas, Zasadzinski, John F.   +8 more
core   +1 more source

The optical properties of transferred graphene and the dielectrics grown on it obtained by ellipsometry

, 2018
Graphene layers grown by chemical vapour deposition (CVD) method and transferred from Cu-foils to the oxidized Si-substrates were investigated by spectroscopic ellipsometry (SE), Raman and X-Ray Photoelectron Spectroscopy (XPS) methods.
Alles, Harry, Kahro, Tauno, Kasikov, Aarne, Kodu, Margus, Matisen, Leonard, Seemen, Helina, Tarre, Aivar   +6 more
core   +1 more source

Fatigue Resistance Improvement in Cold-Drawn NiTi Wires Treated with ALD: A Preliminary Investigation

Applied Sciences
NiTi shape memory alloys (SMAs) are widely studied for their potential applications, and atomic layer deposition (ALD) is an effective technique for coating them due to its precise control over coating thickness.
David Vokoun, Ondřej Tyc, Sneha Manjaree Samal, Ivo Stachiv, Yoshane Yu, Chichung Kei   +5 more
doaj   +1 more source

Atomic Layer Deposition of ZrO2 on Titanium Inhibits Bacterial Adhesion and Enhances Osteoblast Viability

International Journal of Nanomedicine, 2021
Yujin Jo,1 Yong Tae Kim,2 Hoonsung Cho,2 Min-Kyung Ji,3 Jaeyeong Heo,2,3 Hyun-Pil Lim1 1Department of Prosthodontics, School of Dentistry, Chonnam National University, Gwangju, Korea; 2Department of Materials Science and Engineering, Chonnam National ...
Jo Y, Kim YT, Cho H, Ji MK, Heo J, Lim HP   +5 more
doaj  

Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation [PDF]

, 2007
The method of surface preparation on n-type GaAs, even with the presence of an amorphous-Si interfacial passivation layer, is shown to be a critical step in the removal of accumulation capacitance frequency dispersion.
A. M. Sonnet, B. Lee, C. L. Hinkle, E. M. Vogel, F. S. Aguirre-Tostado, G. J. Hughes, J. Kim, K. J. Choi, M. Milojevic, Nicollian E. H., R. M. Wallace, S. McDonnell   +11 more
core   +1 more source

Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer [PDF]

Titanium oxide (TiO2) layer was used to control the flatband voltage (V-FB) of p-type metal-oxide-semiconductor field effect transistors. TiO2 was deposited by plasma enhanced atomic layer deposition (PE-ALD) on hafnium oxide (HfO2) gate dielectrics ...
Kim, H, Kim, WH, Koo, JH, Lee, CS, Lee, T, Lim, SJ, Maeng, WJ   +6 more
core   +1 more source