Results 11 to 20 of about 22,526 (196)

VLC Using 800-μm Diameter APD Receiver Integrated in Standard 0.35-μm BiCMOS Technology

IEEE Photonics Journal, 2021
The fully integrated 800 μm. diameter avalanche photodiode optical receiver is implemented in 0.35 μm BiCMOS technology without any process modifications.
D. Milovancev, T. Jukic, N. Vokic, P. Brandl, B. Steindl, H. Zimmermann   +5 more
doaj   +1 more source

Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering

Nature Communications, 2023
The limited breakdown electric field and the high dark current hider the application of solar blind avalanche photodiodes. Here, Zhang et al., by lattice and band engineering, construct a unipolar barrier avalanche photodiode with suppressed dark current
Qingyi Zhang, Ning Li, Tao Zhang, Dianmeng Dong, Yongtao Yang, Yuehui Wang, Zhengang Dong, Jiaying Shen, Tianhong Zhou, Yuanlin Liang, Weihua Tang, Zhenping Wu, Yang Zhang, Jianhua Hao   +13 more
doaj   +1 more source

Dependence of Ge/Si Avalanche Photodiode Performance on the Thickness and Doping Concentration of the Multiplication and Absorption Layers

Inorganics, 2023
In this article, the performance and design considerations of the planar structure of germanium on silicon avalanche photodiodes are presented. The dependences of the breakdown voltage, gain, bandwidth, responsivity, and quantum efficiency on the reverse
Hazem Deeb, Kristina Khomyakova, Andrey Kokhanenko, Rahaf Douhan, Kirill Lozovoy   +4 more
doaj   +1 more source

Valence band engineering of GaAsBi for low noise avalanche photodiodes

Nature Communications, 2021
An avalanche photodiode is an opto-electronic amplifier that uses impact ionization to provide enhanced sensitivity at the expense of excess noise. In this manuscript, the authors demonstrate that a small amount of Bismuth (Bi) in Gallium Arsenide (GaAs)
Yuchen Liu, Xin Yi, Nicholas J. Bailey, Zhize Zhou, Thomas B. O. Rockett, Leh W. Lim, Chee H. Tan, Robert D. Richards, John P. R. David   +8 more
doaj   +1 more source

Inverted p-down Design for High-Speed Photodetectors

Photonics, 2021
We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling.
Masahiro Nada, Fumito Nakajima, Toshihide Yoshimatsu, Yasuhiko Nakanishi, Atsushi Kanda, Takahiko Shindo, Shoko Tatsumi, Hideaki Matsuzaki, Kimikazu Sano   +8 more
doaj   +1 more source

Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications

IEEE Journal of the Electron Devices Society, 2020
In optical sensors and imagers, high gain that leads to high sensitivity and high signal to noise ratio (SNR) is often desirable. One popular approach is avalanche photomultiplication initiated by impact ionization in an avalanche photodiode or similar ...
Kai Wang, Yihong Qi, Yunfeng Hu, Yangbing Xu, Yitong Xu, Jinming Liu, Xianda Zhou   +6 more
doaj   +1 more source

Free-Space Optical Data Receivers with Avalanche Detectors for Satellite Downlinks Regarding Background Light

Sensors, 2022
Data receiving frontends using avalanche photodiodes are used in optical free-space communications for their effective sensitivity, large detection area, and uncomplex operation.
Dirk Giggenbach
doaj   +1 more source

AlGaAsSb Avalanche Photodiodes

2018 IEEE Photonics Conference (IPC), 2018
Avalanche photodiodes are widely used in optical receivers for high-speed communication systems. We have been studying the material AlGaAsSb (lattice-matched to InP substrates) experimentally in recent years, evaluating its potential as an alternative avalanche material for these avalanche photodiodes. Our experimental studies cover key characteristics
Ng, J.S., Tan, C.H.
openaire   +2 more sources

Advances in near-infrared avalanche diode single-photon detectors

Chip, 2022
Avalanche-photodiode-based near-infrared single-photon detectors have seen rapid development in the last two decades because of their enormous internal gain, high sensitivity, fast response, small volume, and ease of integration.
Chen Liu, Hai-Feng Ye, Yan-Li Shi
doaj   +1 more source

High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit [PDF]

, 2011
High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to
David, John P. R., Ker, Pin Jern, Krysa, Andrey, Marshall, Andrew R. J., Tan, Chee Hing   +4 more
core   +1 more source