Results 21 to 30 of about 22,526 (196)

Development of Fuses for Protection of Geiger-Mode Avalanche Photodiode Arrays [PDF]

, 2016
Current-limiting fuses composed of Ti/Al/Ni were developed for use in Geiger-mode avalanche photodiode arrays for each individual pixel in the array. The fuses were designed to burn out at ∼4.5 × 10[superscript −3] A and maintain post-burnout leakage ...
Ampe, James M., Bailey, Robert J., Grzesik, Michael J., Mahan, Joseph M   +3 more
core   +1 more source

Free-Running Single-Photon Detection via GHz Gated InGaAs/InP APD for High Time Resolution and Count Rate up to 500 Mcount/s

Micromachines, 2023
Free-running InGaAs/InP single-photon avalanche photodiodes (SPADs) typically operate in the active-quenching mode, facing the problems of long dead time and large timing jitter.
Wen Wu, Xiao Shan, Yaoqiang Long, Jing Ma, Kun Huang, Ming Yan, Yan Liang, Heping Zeng   +7 more
doaj   +1 more source

Surface passivation of random alloy AlGaAsSb avalanche photodiode

Electronics Letters, 2023
AlGaAsSb attracts significant interest for near‐infrared avalanche photodiodes (APD). The authors report a two‐order reduction in the dark current and a six‐time enhancement of gain in random alloy (RA) AlGaAsSb APD that is surface passivated by ...
Peng Cao, Hongling Peng, Tiancai Wang, Vibha Srivastava, Manoj Kesaria, Minghui You, Qiandong Zhuang, Wanhua Zheng   +7 more
doaj   +1 more source

Thin Al1−xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown [PDF]

Royal Society Open Science, 2017
When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies.
Xinxin Zhou, Chee Hing Tan, Shiyong Zhang, Manuel Moreno, Shiyu Xie, Salman Abdullah, Jo Shien Ng   +6 more
doaj   +1 more source

A Nearly Interference-Free and Depth-Resolution-Configurable Time-of-Flight System Based on a Mega-Pixel Vertical Avalanche Photodiodes CMOS Image Sensor

IEEE Open Journal of Circuits and Systems, 2022
We present a long range (~250 m) time-of flight (TOF) system with suppressed (nearly-free) mutual-interference. The system is based on a $1296\times960$ pixels vertical avalanche photodiodes (VAPD) CMOS image sensor (CIS).
Shota Yamada, Motonori Ishii, Shigetaka Kasuga, Masato Takemoto, Hiromu Kitajima, Toru Okino, Yusuke Sakata, Manabu Usuda, Yugo Nose, Hiroshi Koshida, Masaki Tamaru, Akito Inoue, Yuki Sugiura, Shigeru Saito, Taiki Kunikyo, Yusuke Yuasa, Kentaro Nakanishi, Naoki Torazawa, Takashi Shirono, Tatsuya Kabe, Shinzo Koyama, Mitsuyoshi Mori, Yutaka Hirose, Masayuki Sawada, Akihiro Odagawa, Tsuyoshi Tanaka   +25 more
doaj   +1 more source

3D Simple Monte Carlo Statistical Model for GaAs Nanowire Single Photon Avalanche Diode

IEEE Photonics Journal, 2020
GaAs based nanowire single photon avalanche diode (SPAD) has been demonstrated with extremely small afterpulsing probability and low dark count rate, and hence it has attracted wide attention for the near infrared applications.
Shiyu Xie, Haochen Li, Jamal Ahmed, Diana L. Huffaker   +3 more
doaj   +1 more source

Modeling of the characteristics of an avalanche photodiode taking into account the influence of the directed energy of the electromagnetic field [PDF]

International Journal of Electronics and Telecommunications
The paper presents and discusses the results of simulation of the current-voltage characteristics of an avalanche photodiode carried out in the SPICE program.
Jacek Dąbrowski, Janusz Zarębski
doaj   +1 more source

HgCdTe e-avalanche photodiode detector arrays

AIP Advances, 2015
Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A) product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 ...
Anand Singh, A. K. Shukla, Ravinder Pal
doaj   +1 more source

Photodetector device for fiber optical telecommunication systems

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019
The properties of a photodetector device with a balanced photodetector, which includes an avalanche silicon photodiode with the Schottky barrier, have been analyzed in this work. Considered here are advantages of the analyzed semiconductor photodetectors
N.O. Andreyeva
doaj   +1 more source

Research on the Metasurface for Single-Photon Avalanche Photodiode

Frontiers in Physics, 2020
As the core device of the quantum information field, the single photon avalanche photodiode (SPAD) is a solid-state single photon detector with a pico-second level time-resolution, low bias voltage, high signal-to-noise ratio, and a low cost.
Linyao Chen, Sunhao Zhang, Yuyang Ye, Chuang Liu, Tianqi Zhao, Yan Shi, Ying Tian, Rui Xu, Yi Chen   +8 more
doaj   +1 more source