Results 61 to 70 of about 127,795 (313)
Synchrotron Radiation for Quantum Technology
Advanced Functional Materials, EarlyView.Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader +10 more
wiley +1 more source
Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se2 solar cells
AIP Advances, 2016 The carriers’ behavior in neutral region (NTR) and space charged region (SCR) of Cu(In,Ga)Se2 thin film based solar cells has been investigated by temperature dependent photoluminescence (PL-T), electroluminescence (EL-T) and current-voltage (IV-T) from ...
J. Yang +6 more
doaj +1 more source
Advanced Functional Materials, EarlyView.This study demonstrates an alternative method of creating charge‐stable negatively charged nitrogen vacancy (NV−) centers close to the diamond surface without high‐temperature annealing. By illuminating nitrogen‐implanted regions with a continuous‐wave 405 nm laser, NV− centers are induced, exhibiting electron spin coherence properties suitable for ...
Jens Fuhrmann +4 more
wiley +1 more source
Optimization of Tunnel Field-Effect Transistor-Based ESD Protection Network
Crystals, 2021 The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing a secondary path in a whole-chip electrostatic discharge (ESD) protection network.
Zhihua Zhu +5 more
doaj +1 more source
Orbital physics of polar Fermi molecules
, 2012 We study a system of polar dipolar fermions in a two-dimensional optical lattice and show that multi-band Fermi-Hubbard model is necessary to discuss such system.
Dutta, O., Lewenstein, M., Sowiński, T.
core +1 more source
Advanced Functional Materials, EarlyView.An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source
IEEE Access, 2017 In this paper, we have performed a comprehensive analysis of the gate-induced drain leakage (GIDL) in emerging nanotube (NT) and nanowire (NW) FET architectures.
Shubham Sahay, Mamidala Jagadesh Kumar
doaj +1 more source
Discover Nano, 2023 This article presents a new line tunneling dominating metal–semiconductor contact-induced SiGe–Si tunnel field-effect transistor with control gate (CG-Line SiGe/Si iTFET). With a structure where two symmetrical control gates at the drain region are given
Jyi-Tsong Lin, Shao-Cheng Weng
doaj +1 more source
Accessing nanotube bands via crossed electric and magnetic fields [PDF]
, 2009 We investigate the properties of conduction electrons in single-walled armchair carbon nanotubes in the presence of mutually orthogonal electric and magnetic fields transverse to the tube's axis.
A. Atland +5 more
core +2 more sources
Advanced Functional Materials, EarlyView.Multifunctional atomic layer deposited coatings and interface treatments enhance direct solar water splitting on GaAs/GaInP tandem cells. Optimized TiO2/Pt nanoparticle bilayers ensure durability and catalytic efficiency with minimal optical losses, while H2 plasma pretreatments maximize photovoltage and interfacial charge extraction.
Tim F. Rieth +8 more
wiley +1 more source