Results 71 to 80 of about 127,795 (313)

A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET

Tạp chí Khoa học Đại học Đà Lạt
Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs).
Huu Thai Bui, Chun-Hsing Shih, Dang Chien Nguyen   +2 more
doaj   +1 more source

Photon-assisted tunneling through a topological superconductor with Majorana bound states

AIP Advances, 2015
Employing the Keldysh Nonequilibrium Green’s function method, we investigate time-dependent transport through a topological superconductor with Majorana bound states in the presence of a high frequency microwave field.
Han-Zhao Tang, Ying-Tao Zhang, Jian-Jun Liu   +2 more
doaj   +1 more source

Spin-polarized tunneling currents through a ferromagnetic insulator between two metallic or superconducting leads

, 2007
Using the Keldysh formalism the tunneling current through a hybrid structure where a confined magnetic insulator (I) is sandwiched between two non-magnetic leads is calculated. The leads can be either normal metals (M) or superconductors (S). Each region
A. M. Zagoskin, D. A. Papaconstantopoulos, D. C. Langreth, H. Haug, L. V. Keldysh, L. V. Keldysh, N. Sandschneider, P. Wachter, W. Nolting, W. Nolting   +9 more
core   +1 more source

Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application

Advanced Functional Materials, EarlyView.
From a database of 170 pentagonal 2D materials, 4 candidates exhibiting altermagnetic ordering are screened. Furthermore, the spin‐splitting and unconventional boundary states in the pentagonal 2D altermagnetic monolayer MnS2 are investigated. A MnS2‐based altermagnetic tunneling junction is designed and, through ab initio quantum transport simulations,
Jianhua Wang, Xingyue Yang, Zongmeng Yang, Jing Lu, Pin Ho, Wenhong Wang, Yee Sin Ang, Zhenxiang Cheng, Shibo Fang   +8 more
wiley   +1 more source

Multiscale model for phonon-assisted band-to-band tunneling in semiconductors [PDF]

Journal of Applied Physics, 2013
We present a TCAD (Technology Computer Aided Design) compatible multiscale model of phonon-assisted band-to-band tunneling in semiconductors, which incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture the measured current-voltage data in silicon, for current transport along the [100 ...
Ajoy, Arvind, Laux, S. E., Murali, Kota V. R. M., Karmalkar, S.   +3 more
openaire   +2 more sources

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

Composition and Resulting Band Alignment at the TiO2/InP Heterointerface: A Fundamental Study Combining Photoemission Spectroscopy and Theory

Advanced Functional Materials, EarlyView.
The chemical composition and band alignment are systematically investigated at the TiO2/InP heterointerface. Thin TiO2 films are deposited by ALD on atomically ordered, P‐terminated p‐InP(100). By combining UPS, XPS, and ab initio molecular dynamics, the atomistic structure and electronic alignment are revealed.
Mohammad Amin Zare Pour, Muhammad Nawaz Qaisrani, Christian Höhn, Johannes Laurenz Wolf, Negin Mogharehabed, Jennifer Velazquez Rojas, Wolfram Jaegermann, Erich Runge, Roel van de Krol, Thomas Hannappel, Christian Dreßler, Agnieszka Paszuk   +11 more
wiley   +1 more source

Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain

IEEE Journal of the Electron Devices Society, 2015
In this paper a simulation study of the effect of conduction and valence band offsets on the subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate-overlapped source is presented.
Saurabh Sant, Andreas Schenk
doaj   +1 more source

Clean‐Limit 2D Superconductivity in a Thick Exfoliated Kagome Film

Advanced Functional Materials, EarlyView.
This study reports clean‐limit 2D superconductivity in a thick kagome system, analogous to the 3D case. It observes a drop in superfluid stiffness near the superconducting transition and a cusp‐like feature in the angular dependence of the upper critical field.
Fei Sun, Andrea Capa Salinas, Stephen D. Wilson, Haijing Zhang   +3 more
wiley   +1 more source

High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor

Micromachines, 2019
A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel ...
Xiaoling Duan, Jincheng Zhang, Jiabo Chen, Tao Zhang, Jiaduo Zhu, Zhiyu Lin, Yue Hao   +6 more
doaj   +1 more source