Results 131 to 140 of about 1,100 (152)

Leakage and Thermal Reliability Optimization of Stacked Nanosheet Field-Effect Transistors with SiC Layers. [PDF]

Micromachines (Basel)
Li C, Shao Y, Kuang F, Liu F, Wang Y, Li X, Zhuang Y.   +6 more
europepmc   +1 more source

Ultra-sensitive heterojunction double gate BioTFET device for SARS-CoV-2 biomolecules detection. [PDF]

Sci Rep
Vimala P, Geege AS, Mohankumar N, Arun Samuel TS, Ananth Kumar T, Dhanaselvam PS, Anand IV.   +6 more
europepmc   +1 more source

Pressure-dependent current transport in vertical BP/MoS₂ heterostructures. [PDF]

Heliyon
Durante O, De Stefano S, Mazzotti A, Viscardi L, Giubileo F, Kharsah O, Daniel L, Sleziona S, Schleberger M, Di Bartolomeo A.   +9 more
europepmc   +1 more source

Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection. [PDF]

Nanomaterials (Basel)
Tamersit K, Kouzou A, Rodriguez J, Abdelrahem M.   +3 more
europepmc   +1 more source

Electrical characterization of multi-gated WSe₂/MoS₂ van der Waals heterojunctions. [PDF]

Sci Rep
Chava P, Kateel V, Watanabe K, Taniguchi T, Helm M, Mikolajick T, Erbe A.   +6 more
europepmc   +1 more source

High performance and low leakage heterojunction 10 nm PZT NC-FinFET for low power application. [PDF]

Sci Rep
Tripathi SL, Prakash NN, Raj B, Hadiyoso S.   +3 more
europepmc   +1 more source

A Ternary Inverter Based on Hybrid Conduction Mechanism of Band-to-Band Tunneling and Drift-Diffusion Process. [PDF]

Micromachines (Basel)
Lu B, Ma X, Wang D, Chai G, Chen Y, Li Z, Dong L.   +6 more
europepmc   +1 more source

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Band-to-band tunnelling (BTBT) in HgCdTe-based nBn detectors for LWIR applications

2014 Conference on Optoelectronic and Microelectronic Materials & Devices, 2014
In this paper we present a theoretical study on the influence of band-to-band-tunnelling (BTBT) in HgCdTe-based nBn detectors for longwave infrared (LWIR) applications. Numerical modelling shows that BTBT strongly depends on the barrier parameters and degrades the detectivity of LWIR nBn detectors.
N. D. Akhavan, G. Jolley, G. Umana Membreno, J. Antoszewski, L. Faraone   +4 more
openaire   +1 more source

Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low band-to-band-tunneling (BTBT)

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 2005
For the first time, the tradeoffs between higher mobility (smaller bandgap) channel and lower band-to-band-tunneling (BTBT) leakage have been investigated through detailed experiments and simulations. The resulting optimal structure obtained was an ultra-thin, low defect, 2nm fully strained Ge epi channel on relaxed Si, with a 4nm Si cap layer.
T. Krishnamohan, Z. Krivokapic, K. Uchida, Y. Nishi, K.C. Saraswat   +4 more
openaire   +1 more source

Thermally Stable Organic Field‐Effect Transistors Based on Asymmetric BTBT Derivatives for High Performance Solar‐Blind Photodetectors

Advanced Science, 2022
Yanan Sun, Yuan-Ping Yi, Lin Fan
exaly