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Wide Band Gap Chalcogenide Semiconductors. [PDF]
Chemical Reviews, 2019 Wide band gap semiconductors are essential for today's electronic devices and energy applications because of their high optical transparency, controllable carrier concentration, and tunable electrical conductivity.
R. Woods‐Robinson +6 more
semanticscholar +7 more sources
Low Band Gap Conjugated Semiconducting Polymers
Advanced Materials & Technologies, 2021 Important parameters of an organic semiconductor material are the electronic band gap (Eg) and the position of highest occupied and lowest unoccupied bands versus vacuum.
M. Scharber, N. S. Sariçiftçi
semanticscholar +1 more source
AIP Advances, 2021 This work presents the temperature-dependent characteristics of the thin-barrier Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT), p-type CuO gate HEMT, and high-k HfO2 metal–insulator–semiconductor HEMT (MIS-HEMT).
Yaopeng Zhao +7 more
doaj +1 more source
Energy band-gap engineering of graphene nanoribbons. [PDF]
Physical Review Letters, 2007 We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point.
Melinda Y. Han +3 more
semanticscholar +1 more source
Nano-Micro Letters, 2020 Recent developments in the synthesis of graphene-based structures focus on continuous improvement of porous nanostructures, doping of thin films, and mechanisms for the construction of three-dimensional architectures.
Jing Ning +6 more
doaj +1 more source
Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility
Nanoscale Research Letters, 2021 High-mobility Ge nMOSFETs with ZrO2 gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O3) treatment, O3 post-treatment and without O3 treatment.
Lulu Chou +7 more
doaj +1 more source
Nanomaterials, 2021 Transition metal dichalcogenides (TMDs) have attracted widespread attention due to their excellent electrochemical and catalytic properties. In this work, a tungsten (W)-modulated molybdenum selenide (MoSe2)/graphene heterostructure was investigated for ...
Qixian Liu +8 more
doaj +1 more source
High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric
Functional Diamond, 2023 The high frequency H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on single diamond substrate using 300°C ALD grown Al2O3 as gate dielectric and passivation layer.
Ma Yuanchen +8 more
doaj +1 more source
ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior
Nanoscale Research Letters, 2021 Here we report the ZrO x -based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V V GS range, which can achieve new opportunities in future voltage-scalable NCFET applications.
Siqing Zhang +5 more
doaj +1 more source
Temperature-Dependent Optical Band Gap in CsPbBr3, MAPbBr3, and FAPbBr3 Single Crystals
Journal of Physical Chemistry Letters, 2020 Single crystals represent a benchmark for understanding the bulk properties of halide perovskites. We have indeed studied the dielectric function of lead bromide perovskite single crystals (MAPbBr3, CsPbBr3 and for the first time FAPbBr3) by ...
G. Mannino +6 more
semanticscholar +1 more source