Results 1 to 10 of about 187,986 (268)
Wide Band Gap Chalcogenide Semiconductors [PDF]
Chemical Reviews, 2020 Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent
Rachel Woods-Robinson +6 more
openaire +5 more sources
AIP Advances, 2021 This work presents the temperature-dependent characteristics of the thin-barrier Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT), p-type CuO gate HEMT, and high-k HfO2 metal–insulator–semiconductor HEMT (MIS-HEMT).
Yaopeng Zhao +7 more
doaj +1 more source
Nano-Micro Letters, 2020 Recent developments in the synthesis of graphene-based structures focus on continuous improvement of porous nanostructures, doping of thin films, and mechanisms for the construction of three-dimensional architectures.
Jing Ning +6 more
doaj +1 more source
Silicon Nanowire Band Gap Modification [PDF]
Nano Letters, 2006 Band gap modification for small-diameter (1 nm) silicon nanowires resulting from the use of different species for surface termination is investigated by density functional theory calculations. Because of quantum confinement, small-diameter wires exhibit a direct band gap that increases as the wire diameter narrows, irrespective of surface termination ...
Nolan, Michael +4 more
openaire +3 more sources
High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric
Functional Diamond, 2023 The high frequency H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on single diamond substrate using 300°C ALD grown Al2O3 as gate dielectric and passivation layer.
Ma Yuanchen +8 more
doaj +1 more source
Nanomaterials, 2021 Transition metal dichalcogenides (TMDs) have attracted widespread attention due to their excellent electrochemical and catalytic properties. In this work, a tungsten (W)-modulated molybdenum selenide (MoSe2)/graphene heterostructure was investigated for ...
Qixian Liu +8 more
doaj +1 more source
Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility
Nanoscale Research Letters, 2021 High-mobility Ge nMOSFETs with ZrO2 gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O3) treatment, O3 post-treatment and without O3 treatment.
Lulu Chou +7 more
doaj +1 more source
ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior
Nanoscale Research Letters, 2021 Here we report the ZrO x -based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V V GS range, which can achieve new opportunities in future voltage-scalable NCFET applications.
Siqing Zhang +5 more
doaj +1 more source
All‐in‐One Compression and Encryption Engine Based on Flexible Polyimide Memristor
Small Science, 2023 It is anticipated that the rapid development of the Internet of Things (IoT) will improve the quality of human life. Nonetheless, large amounts of data need to be replicated, stored, processed, and shared, posing formidable challenges to communication ...
Rui Wang +11 more
doaj +1 more source
Flexible Nanocomposite Conductors for Electromagnetic Interference Shielding
Nano-Micro Letters, 2023 Highlights Convincing candidates of flexible (stretchable/compressible) electromagnetic interference shielding nanocomposites are discussed in detail from the views of fabrication, mechanical elasticity and shielding performance.
Ze Nan +4 more
doaj +1 more source