Results 11 to 20 of about 4,726,512 (396)

Lithographic band gap tuning in photonic band gap crystals [PDF]

open access: yesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1996
We describe the lithographic control over the spectral response of three-dimensional photonic crystals. By precise microfabrication of the geometry using a reproducible and reliable procedure consisting of electron beam lithography followed by dry ...
Arbet-Engels, V.   +3 more
core   +3 more sources

Silicon Nanowire Band Gap Modification [PDF]

open access: yesNano Letters, 2006
Band gap modification for small-diameter (1 nm) silicon nanowires resulting from the use of different species for surface termination is investigated by density functional theory calculations. Because of quantum confinement, small-diameter wires exhibit a direct band gap that increases as the wire diameter narrows, irrespective of surface termination ...
Nolan, Michael   +4 more
openaire   +3 more sources

All‐in‐One Compression and Encryption Engine Based on Flexible Polyimide Memristor

open access: yesSmall Science, 2023
It is anticipated that the rapid development of the Internet of Things (IoT) will improve the quality of human life. Nonetheless, large amounts of data need to be replicated, stored, processed, and shared, posing formidable challenges to communication ...
Rui Wang   +11 more
doaj   +1 more source

Flexible Nanocomposite Conductors for Electromagnetic Interference Shielding

open access: yesNano-Micro Letters, 2023
Highlights Convincing candidates of flexible (stretchable/compressible) electromagnetic interference shielding nanocomposites are discussed in detail from the views of fabrication, mechanical elasticity and shielding performance.
Ze Nan   +4 more
doaj   +1 more source

The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors

open access: yesNanoscale Research Letters, 2020
In this paper, the hybrid β-Ga2O3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K.
Tao Zhang   +16 more
doaj   +1 more source

Memristor-Based Signal Processing for Compressed Sensing

open access: yesNanomaterials, 2023
With the rapid progress of artificial intelligence, various perception networks were constructed to enable Internet of Things (IoT) applications, thereby imposing formidable challenges to communication bandwidth and information security.
Rui Wang   +6 more
doaj   +1 more source

Lead‐Free Halide Double Perovskite Cs2AgBiBr6 with Decreased Band Gap

open access: yesAngewandte Chemie, 2020
Environmentally friendly halide double perovskites with improved stability are regarded as a promising alternative to lead halide perovskites. The benchmark double perovskite, Cs2AgBiBr6, shows attractive optical and electronic features, making it ...
Fuxiang Ji   +13 more
semanticscholar   +1 more source

Cs2InAgCl6: A New Lead-Free Halide Double Perovskite with Direct Band Gap. [PDF]

open access: yesJournal of Physical Chemistry Letters, 2016
A2BB'X6 halide double perovskites based on bismuth and silver have recently been proposed as potential environmentally friendly alternatives to lead-based hybrid halide perovskites. In particular, Cs2BiAgX6 (X = Cl, Br) have been synthesized and found to
G. Volonakis   +9 more
semanticscholar   +1 more source

Gapping Fragile Topological Bands by Interactions [PDF]

open access: yesPhysical Review Letters, 2022
10 pages, 6 figures. Added References, expanded Supplementary Information. See accompanying animation at https://youtu.be/78USiNqM8I0.
Turner, Ari M., Berg, Erez, Stern, Ady
openaire   +3 more sources

Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure

open access: yesCrystals, 2021
A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the UV-LED with stair-like Si-doping GaN layer possesses better ...
Xiaomeng Fan   +8 more
doaj   +1 more source

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