Results 11 to 20 of about 187,986 (268)
The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors
In this paper, the hybrid β-Ga2O3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K.
Tao Zhang +16 more
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Memristor-Based Signal Processing for Compressed Sensing
With the rapid progress of artificial intelligence, various perception networks were constructed to enable Internet of Things (IoT) applications, thereby imposing formidable challenges to communication bandwidth and information security.
Rui Wang +6 more
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Gapping Fragile Topological Bands by Interactions [PDF]
10 pages, 6 figures. Added References, expanded Supplementary Information. See accompanying animation at https://youtu.be/78USiNqM8I0.
Turner, Ari M., Berg, Erez, Stern, Ady
openaire +3 more sources
Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure
A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the UV-LED with stair-like Si-doping GaN layer possesses better ...
Xiaomeng Fan +8 more
doaj +1 more source
We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K.
Zhuangzhuang Hu +10 more
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In this work, we report on demonstrating lateral β-Ga2O3 Schottky barrier diodes (SBDs) fabricated on Fe-GaN/sapphire (0001) substrates by using the non-vacuum, low-cost mist chemical vapor deposition (mist CVD) method for the first time.
Yu Xu +10 more
doaj +1 more source
In this paper, a novel silicon carbide (SiC) trench metal oxide semiconductor field effect transistor (MOSFET) with improved reverse recovery charge and switching energy loss is proposed and investigated utilising ISE‐TCAD simulations.
Sicheng Liu +6 more
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Ultrathin wide band gap kesterites
Thickness reduction of kesterite CZTS solar cells down to 250 nm is performed showing relatively small performance loss. The introduction of oxide passivation layers improves performance and a NaF treatment is used to make such back contact conductive.
Charlotte Platzer Björkman +4 more
openaire +3 more sources
All-inorganic carbon-based CsPbIBr2 perovskite solar cells (PSCs) have attracted increasing interest due to the low cost and the balance between bandgap and stability.
Wensheng Lan +11 more
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Flexible ITO-Free Organic Solar Cells Based on
Flexible organic solar cells (OSCs) using our proposed MoO3 (2 nm)/Ag (9 nm) anode are fabricated on poly(ethylene terephthalate) (PET) substrates with poly(3hexylthiophene) (P3HT) and [6,6]-phenyl-C61 -butyric acid methyl ester (PCBM) films as the ...
Zhizhe Wang +8 more
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