Results 61 to 70 of about 1,120,876 (247)
Fractional charge perspective on the band-gap in density-functional theory
, 2007 The calculation of the band-gap by density-functional theory (DFT) methods is examined by considering the behavior of the energy as a function of number of electrons.
A. Ruzsinszky +4 more
core +1 more source
Band Structure Engineering of Multinary Chalcogenide Topological Insulators
, 2011 Topological insulators (TIs) have been found in strained binary HgTe and ternary I-III-VI2 chalcopyrite compounds such as CuTlSe2 which have inverted band structures. However, the non-trivial band gaps of these existing binary and ternary TIs are limited
Chen, Shiyou +8 more
core +1 more source
, 2019 High-doping induced Urbach tails and band gap narrowing play a significant role in determining the performance of tunneling devices and optoelectronic devices such as tunnel field-effect transistors (TFETs), Esaki diodes and light-emitting diodes.
Charles, James +3 more
core +1 more source
Definitive experimental evidence for two-band superconductivity in MgB2
, 2003 The superconducting gap of MgB2 has been studied by high-resolution angle-resolved photoemission spectroscopy (ARPES). The momentum(k)-resolving capability of ARPES enables us to identify the s- and p-orbital derived bands predicted from band structure ...
A. Matsushita +16 more
core +1 more source
Band structure of honeycomb photonic crystal slabs
, 2006 Two-dimensional (2D) honeycomb photonic crystals with cylinders and connecting walls have the potential to have a large full band gap. In experiments, 2D photonic crystals do not have an infinite height, and therefore, we investigate the effects of the ...
Guo, G. Y., Weng, Tai-I
core +1 more source
A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance
Nanoscale Research Letters, 2020 In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced.
Shupeng Chen +5 more
doaj +1 more source
AIP Advances, 2018 Metal oxide semiconductor field effect transistors (MOSFETs) with Al2O3 passivation layer grown by atomic layer deposition (ALD) at 200 oC and 300 oC were fabricated on hydrogen-terminated polycrystalline diamond by using gold mask technology. The device
Zeyang Ren +6 more
doaj +1 more source
AIP Advances, 2020 In this study, normally off AlN/Al0.05Ga0.95N high-electron-mobility transistors (HEMTs) on a Si substrate were fabricated by adjusting the surface states of the heterostructure.
Weihang Zhang +5 more
doaj +1 more source
Ferromagnetic redshift of the optical gap in GdN
, 2007 We report measurements of the optical gap in a GdN film at temperatures from 300 to 6K, covering both the paramagnetic and ferromagnetic phases. The gap is 1.31eV in the paramagnetic phase and red-shifts to 0.9eV in the spin-split bands below the Curie ...
A. R. H. Preston +11 more
core +1 more source