Results 11 to 20 of about 2,489 (207)

Individual forecasting of reliability of bipolar transistors by using electrical voltage as a simulation factor

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020
Individual forecasting of the reliability of semiconductor devices, taking into account gradual failures, is an urgent task, as it allows you to choose highly reliable instances for critical electronic devices of long-term functioning.
S. M. Borovikov, E. N. Shneiderov, A. I. Berasnevich, V. O. Kaziuchyts   +3 more
doaj   +1 more source

Graded-Gap Technology Formatting of High-Speed GaAs – Transistor Structures as the Basis for Modern of Large Integrated Circuits

Фізика і хімія твердого тіла, 2016
Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons, decrease transit time and the transition to a ballistic work. Power consumption is reduced too. Formation of large integrated circuits structures on Si-
S. P. Novosyadlyy, A. M. Bosats'kyy
doaj   +1 more source

Controlling of Differential Resistance of p–n-Junctions of Bipolar Transistor in Active Mode by Method of Impedance Spectroscopy

Приборы и методы измерений, 2019
Controlling of parameters of manufactured transistors and interoperational controlling during their production are necessary conditions for production of competitive products of electronic industry.
N. I. Gorbachuk, N. A. Poklonski, Ya. N. Marochkina, S. V. Shpakovski   +3 more
doaj   +1 more source

The Cryogenic Temperature Behavior of Bipolar, MOS, and DTMOS Transistors in Standard CMOS

IEEE Journal of the Electron Devices Society, 2018
Both CMOS bandgap voltage references and temperature sensors rely on the temperature behavior of either CMOS substrate BJTs or MOS transistors in weak inversion.
Harald Homulle, Lin Song, Edoardo Charbon, Fabio Sebastiano   +3 more
doaj   +1 more source

Design, Analysis and Experimental Verification of the Self-Resonant Inverter for Induction Heating Crucible Melting Furnace Based on IGBTs Connected in Parallel

Electricity, 2021
The object of this research was a self-resonated inverter, based on paralleled Insulated-Gate Bipolar Transistors (IGBTs), for high-frequency induction heating equipment, operating in a wide range of output powers, applicable for research and industrial ...
Borislav Dimitrov, Khaled Hayatleh, Steve Barker, Gordana Collier   +3 more
doaj   +1 more source

Formation of MOS-transistors with isolation of active elements by oxiden porous silicon [PDF]

Технологія та конструювання в електронній апаратурі, 2009
Ultrathin functional layers of MOS transistors require high-quality isolation of active elements. A new method for forming epitaxial structures for silicon-on-insulator technology based on porous silicon is proposed.
S. P. Novosyadlyi, V. M. Vivcharuk
doaj   +1 more source

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Micromachines, 2020
As the need for green and effective utilization of energy continues to grow, the advancements in the energy and power electronics industry are constantly driven by this need, as both industries are intertwined for obvious reasons. The developments in the
Immanuel N. Jiya, Rupert Gouws
doaj   +1 more source

Ion bipolar junction transistors [PDF]

Proceedings of the National Academy of Sciences, 2010
Dynamic control of chemical microenvironments is essential for continued development in numerous fields of life sciences. Such control could be achieved with active chemical circuits for delivery of ions and biomolecules. As the basis for such circuitry, we report a solid-state ion bipolar junction transistor (IBJT) based on conducting polymers and ...
Tybrandt, Klas, Larsson, Karin C, Richter-Dahlfors, Agneta, Berggren, Magnus   +3 more
openaire   +3 more sources

An Investigation of the Effects of Emitter Pre-Deposition Temperature in Double-Diffued Polysilicon Emitter Bipolar Transistors

ASEAN Journal on Science and Technology for Development, 2017
An Investigation of the Effects of Emitter Pre-Deposition Temperature in Double-Diffued Polysilicon Emitter Bipolar ...
E.F Chor, C.P Chen, L.S Tan
doaj   +1 more source

Accelerated Testing of High Power Transistors for Long Operation when Solving Problems of Prediction of their Reliability by the Method of Imitation Simulation

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022
When evaluating the individual reliability of semiconductor devices by gradual failures for a given operating time, the value of the electrical parameter of a particular instance for this operating time is predicted using the simulation method. To obtain
V. O. Kaziuchyts, E. V. Kalita, S. M. Borovikov, A. I. Berasnevich   +3 more
doaj   +1 more source