Results 51 to 60 of about 2,489 (207)

Recent Advances and Perspectives on Field‐Effect Transistors for Artificial Visual Neuromorphic Systems

Advanced Science, EarlyView.
This review presents a comprehensive overview of FET‐based visual neuromorphic systems, covering their semiconductor materials, core device architectures, and operating mechanisms. It further reviews their implementation in emulating biological visual functions, addresses current technological challenges, and outlines future development directions. The
Liu Yaqian, Lang Menghua, Xu Yihang, Zhang Manyu, Lei Chunkang, Lu Xiaozhou, Dou Yi, Wang Lingli, Jiang Liying, Hu Yuanyuan, Chen Huipeng, Jiang Lang   +11 more
wiley   +1 more source

Experimental Research of Pulse Gamma Ray Radiation Effect on Neutron Irradiated NPN Bipolar Transistors

Yuanzineng kexue jishu
In order to further elucidate the influence of neutron pre-irradiation on the pulse gamma ray radiation effect of NPN bipolar transistors, the photocurrent response experiments of transient ionizing radiation were performed after NPN bipolar transistors ...
LIU Weijian, LI Ruibin, GUO Xiaoqiang, LI Junlin, BAI Xiaoyan, YU Shilin
doaj   +1 more source

A Current-mode Logarithmic Function Circuit

Active and Passive Electronic Components, 2004
A new current-mode analog circuit configuration that implements the function ln (x/y) is proposed. The circuit uses bipolar transistors and resistors and is suitable for integration.
Muhammad Taher Abuelma'atti, Osama Oglah Faris   +1 more
doaj   +1 more source

Self-Powered Neuromorphic Touch Sensors Based on Triboelectric Devices: Current Approaches and Open Challenges. [PDF]

Small
This review outlines how triboelectric self‐powered tactile sensors can be integrated with neuromorphic devices to emulate human touch. It summarizes current coupling strategies, operational modes, and synaptic functions enabled by triboelectric nanogerator (TENG)‐based systems, while highlighting key mechanisms, performance considerations, and future ...
Torricelli F, Pace G.
europepmc   +2 more sources

In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications

Advanced Science, EarlyView.
By combining ionic nonvolatile memories and transistors, this work proposes a compact synaptic unit to enable low‐precision neural network training. The design supports in situ weight quantization without extra programming and achieves accuracy comparable to ideal methods. This work obtains energy consumption advantage of 25.51× (ECRAM) and 4.84× (RRAM)
Zhen Yang, Yuxiang Yang, Baiqian Wang, Yaoyu Tao, Zelun Pan, Lei Cai, Teng Zhang, Longhao Yan, Xianbin Li, Yuchao Yang   +9 more
wiley   +1 more source

Study on Total Ionize Dose Irradiation Damages of Silicon Epitaxial Planar NPN Bipolar Transistor

Yuanzineng kexue jishu, 2022
In this paper, the total ionize dose (TID) irradiations for NPN bipolar transistors were carried out by 60Co γ rays. Obvious degradations were observed after irradiation, which are manifested as the increase of base current and the decrease of current ...
PENG Chao;LEI Zhifeng;ZHANG Hong;ZHANG Zhangang;HE Yujuan
doaj  

Ion Crowding Effect in Unilaterally Downsized Perovskite Memristors

Advanced Science, EarlyView.
The downscaling of perovskite memristors incorporating monocrystalline nanoplates is accompanied by an ion crowding effect, which greatly enhances the local electric field in the vicinity of electrode. The highly controlled crowding of anions and vacancies results in anisotropic switching characteristics as well as unique morphology modification ...
Conghui Tan, Meiqi An, Weili Liu, Haotian Wang, Shuai Yang, Jing Li, Jianliang Li, Yingmin Luo, Chao Wang, Jiao Xu, Yaodan Chi, Yiming Yang   +11 more
wiley   +1 more source

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

Advanced Science, EarlyView.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal, Yeong‐Her Wang, Sanjay Kumar, Themis Prodromakis   +3 more
wiley   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
wiley   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
wiley   +1 more source