Results 231 to 240 of about 14,805 (258)

High breakdown voltage InGaAs/InP double heterojunction bipolar transistors withfmax= 256 GHz and BVCEO= 8.3 V

Journal of Semiconductors, 2012
An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1 × 15 μm2 exhibits a current cutoff frequency ft = 170 GHz and a maximum oscillation frequency fmax = 256 GHz.
Wei Cheng   +4 more
openaire   +1 more source

BV<inf>DSS</inf> (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs

2018 IEEE International Reliability Physics Symposium (IRPS), 2018
Jifa Hao   +4 more
openaire   +1 more source

Modeling and experimental study on breakdown voltage (BV) in low speed wire electrical discharge machining (LS-WEDM) of Ti-6Al-4V

The International Journal of Advanced Manufacturing Technology, 2016
Yadong Gong   +5 more
openaire   +1 more source

Integrative oncology: Addressing the global challenges of cancer prevention and treatment

Ca-A Cancer Journal for Clinicians, 2022
Jun J Mao,, Msce   +2 more
exaly  

Obesity and adverse breast cancer risk and outcome: Mechanistic insights and strategies for intervention

Ca-A Cancer Journal for Clinicians, 2017
Cynthia Morata-Tarifa   +1 more
exaly  

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