Results 161 to 170 of about 1,566 (190)

Revealing the Effect of Crystalline Self-Assembled Monolayer in Biomimetic Photosynapse with Ultraviolet Light Protection Capability. [PDF]

ACS Appl Mater Interfaces
Wu YS, Chen WC, Lin YS, Liu CL, Lin YC, Chen WC.   +5 more
europepmc   +1 more source

Exploring the Interplay of Lattice Dynamics and Charge Transport in Organic Semiconductors: Progress Toward Rational Phonon Engineering. [PDF]

Angew Chem Int Ed Engl
Peluzo BMTC, Meena R, Catalano L, Schweicher G, Ruggiero MT.   +4 more
europepmc   +1 more source

Exploration and development of molecule-based printed electronics materials: an integrated approach using experimental, computational, and data sciences. [PDF]

Sci Technol Adv Mater
Hasegawa T, Inoue S, Tsuzuki S, Horiuchi S, Matsui H, Okada T, Kumai R, Yonekura K, Maki-Yonekura S.   +8 more
europepmc   +1 more source

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Photoemission studies of C8-BTBT/La0.67Sr0.33MnO3 interface

Synthetic Metals, 2020
Abstract The electronic structure and chemical reaction at the interface between 2,7-diocty[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) and La0.67Sr0.33MnO3 (LSMO) have been investigated using ultraviolet photoemission spectroscopy, X-ray photoemission spectroscopy, and atomic force microscopy.
Haipeng Xie, Dongmei Niu, Baoxing Liu
exaly   +2 more sources

Modulation of thermoelectric performance of Cn-BTBT molecular junctions by engineering contact geometry

Results in Physics, 2021
Organic molecular devices are promising candidates for thermoelectric applications. By using density functional theory combined with non-equilibrium Green’s function method, we have investigated the thermoelectric properties of a single-molecule junction, which is constructed by 2,7-dialkyl [1] benzothieno [3,2-b] [1] benzothiophene derivatives (Cn ...
, Xiaojiao Zhang, Yun-Peng Wang
exaly   +3 more sources

BTBT Transistor Scaling: Can they be Competitive with MOSFETs?

2008 Device Research Conference, 2008
The authors analysis shows the significant challenges facing the development of TFETs. Our simulation results show that it is unlikely that Si TFETs will be able to achieve the necessary ON-current to compete with MOSFETs. The exponential drain characteristic is a problem fundamental to TFET structures demonstrated so far.
Raymond Woo, H.-Y. Serene Koh, Caner Onal, P. B. Griffin, James D. Plummer   +4 more
openaire   +1 more source

Hybrid C8-BTBT/InGaAs nanowire heterojunction for artificial photosynaptic transistors

Journal of Semiconductors, 2022
Abstract The emergence of light-tunable synaptic transistors provides opportunities to break through the von Neumann bottleneck and enable neuromorphic computing. Herein, a multifunctional synaptic transistor is constructed by using 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) and indium gallium arsenide (InGaAs) nanowires
Yiling Nie, Pengshan Xie, Xu Chen, Chenxing Jin, Wanrong Liu, Xiaofang Shi, Yunchao Xu, Yongyi Peng, Johnny C. Ho, Jia Sun, Junliang Yang   +10 more
openaire   +1 more source

Organosilicon derivatives of BTBT for monolayer organic field effect transistors

Organic Field-Effect Transistors XVI, 2017
Synthesis of novel organosilicon derivatives of [1]benzothieno[3,2-b][1]-benzothiophene (BTBT) linked though flexible aliphatic spacers to a disiloxane anchor group is reported. They were successfully used in monolayer OFETs with the charge carrier mobilities up to 0.02 cm2 /Vs, threshold voltage close to 0 V and On/Off ratio up to 10,000. Influence of
Viktoria P. Chekusova, Askold A. Trul, Alexey S. Sizov, Marina S. Polinskaya, Elena V. Agina, Oleg V. Borshchev, Sergey A. Ponomarenko   +6 more
openaire   +1 more source

Predictivity of the non-local BTBT model for structure dependencies of tunnel FETs

2014 International Workshop on Computational Electronics (IWCE), 2014
The non-local band to band tunneling model developed and implemented into the three-dimensional device simulator by the authors is evaluated for the tunnel-FET modeling focused on device geometry effects. Measured characteristics of SOI, Fin, and parallel-plate silicon tunnel FETs fabricated by the authors are compared with simulations based on the non-
Koichi Fukuda, Takahiro Mori, Wataru Mizubayashi, Yukinori Morita, Akihito Tanabe, Meishoku Masahara, Tetsuji Yasuda, Shinji Migita, Hiroyuki Ota   +8 more
openaire   +1 more source