Results 21 to 30 of about 1,566 (190)

Transistor-Level Activation Functions via Two-Gate Designs: From Analog Sigmoid and Gaussian Control to Real-Time Hardware Demonstrations. [PDF]

Adv Mater
Screen gate‐based transistors are presented, enabling tunable analog sigmoid and Gaussian activations. The SA‐transistor improves MRI classification accuracy, while the GA‐transistor supports precise Gaussian kernel tuning for forecasting. Both functions are implemented in a single device, offering compact, energy‐efficient analog AI processing ...
Cho J, Han Y, Lee WW, Yoo Y, Mohanan KU, Kim CH, Choi J, Kim YJ, Shin W, Yoo H.   +9 more
europepmc   +2 more sources

Molecular interplay at the PMMA dielectric and C13-BTBT semiconductor interface

Physical Chemistry Chemical Physics
A growing interest towards all-organic electronics emphasized the importance of interfaces between the functional components of such devices. In particular, the interaction between the dielectric and semiconductor plays a critical role in device ...
Brzhezinskaya, M., Vivod, D., Gubanov, K., Fink, Rainer H., Brzhezinskaya, Maria, Sauer, Christiane, Fink, R.H., Vivod, Dustin, Gubanov, Kirill, Zahn, D., Sauer, C., Zahn, Dirk   +11 more
core   +4 more sources

Directional crystallization of C8-BTBT-C8 thin films in a temperature gradient [PDF]

Materials Chemistry Frontiers, 2021
A directional crystallization of the compound 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8) based on a temperature gradient approach has been used as a post-deposition process to control the crystalline morphology of thin films.
Geerts, Yves, Schweicher, Guillaume, Fastres, Pierre, Resel, Roland, Abbas, Mamatimin, Liu, Guangfeng, Fastré, Pierre, Wantz, Guillaume, Geerts, Yves Henri   +8 more
core   +3 more sources

Structural Order and Thermal Behavior of Ph-BTBT-10 Monolayer Phases

The Journal of Physical Chemistry C
IR and Raman spectroscopy investigations are carried out on single crystals of the organic semiconductor 7-decyl-2-phenyl[1]­benzothieno­[3,2-b]­[1]­benzothiophene (Ph-BTBT-10) subjected to thermal cycling through the boundaries of its Smectic E (SmE ...
Yves Geerts (2179024), Elisabetta Venuti (1291371), Elena Ferrari (30903), Lorenzo Pandolfi (9196971), Guillaume Schweicher (2179034), Tommaso Salzillo (1417756), Matteo Masino (1417753)   +6 more
core   +6 more sources

Critical band-to-band-tunnelling based optoelectronic memory [PDF]

Light: Science & Applications
Neuromorphic vision hardware, embedded with multiple functions, has recently emerged as a potent platform for machine vision. To realize memory in sensor functions, reconfigurable and non-volatile manipulation of photocarriers is highly desirable ...
Hangyu Xu, Runzhang Xie, Jinshui Miao, Zhenhan Zhang, Haonan Ge, Xuming Shi, Min Luo, Jinjin Wang, Tangxin Li, Xiao Fu, Johnny C. Ho, Peng Zhou, Fang Wang, Weida Hu   +13 more
doaj   +2 more sources

Design and TCAD Simulation of p+–n+ InAs‐Based TFET

Nano Select
Tunnel field‐effect transistors (TFETs) are promising for ultra‐low‐power electronics, yet their practical adoption is hindered by limited ON‐current and strong sensitivity of band‐to‐band tunneling (BTBT) to geometry, doping, and quantum confinement ...
Muhammad Elgamal, Mona El Sabbagh, Fatma Shokry, Ahmed Shaker, Mohammed El‐Banna, Mohamed Abouelatta   +5 more
doaj   +2 more sources

Gate‐Dielectric Surface Engineering With Fluorinated Monolayers: Minimizing Contact Resistance and Nonidealities in OFETs

Advanced Electronic Materials
Organic field‐effect transistors (OFETs) hold great potential for flexible, large‐area electronics, but face challenges related to hysteresis in the transfer characteristics, contact resistance, and charge trapping.
Shaghayegh Mesforush, Alba Cazorla, Hayley Melville, Philippe Blanchard, Hagen Klauk, Ute Zschieschang, Min Zhang, Lamiaa Fijahi, Marta Mas‐Torrent, Esther Barrena   +9 more
doaj   +2 more sources

Template‐Guided C8‐BTBT/MAPbBr₃/C8‐BTBT Heterostructures for Broadband Bipolar Phototransistors

Advanced Materials Interfaces, 2022
AbstractBipolar junction transistor (BJT) has had an unprecedented impact on the electronic industry and helped to usher in the digital revolution prominently. However, the critical part of BJT, p–n junction, is formed by carefully incorporating substitutional impurities in traditional bulk semiconductors and it is difficult to implement in ...
Zhongpu Wang, Jia Liu, Xiaosong Liu, Jiyou Jin, Hui Liu, Kang Peng, Zhisheng Peng, Haonan Wei, Weiguo Chu, Weimin Fan, Changchun Yang, Lianfeng Sun, Yong Jun Li   +12 more
openaire   +1 more source

Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications

Advanced Electronic Materials, 2023
Band‐to‐band tunneling (BTBT) devices with superior subthreshold swing directly related to on/off switching speed and power consumption efficiency have emerged as a breakthrough of the limitation in conventional metal‐oxide‐semiconductor field‐effect ...
Gunhoo Woo, Taesung Kim, Hocheon Yoo
doaj   +1 more source

Low clearing asymmetric BTBT mesogens with perfect ambipolar charge transport

Journal of Materials Chemistry C
International audienceTwo new asymmetrically substituted BTBT mesogens were successfully synthesised. These mesogens were designed to achieve low melting and clearing temperatures via the decoration with swallow-tailed chains containing peripheral ...
Singh, Dharmendra Pratap, Fink, Leonard, Mager, Loïc, Lehmann, Matthias   +3 more
core   +2 more sources