Results 31 to 40 of about 809 (169)

A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET

IEEE Journal of the Electron Devices Society, 2022
The origin of low-frequency noise (LFN) properties and the accuracy of LFN model were demonstrated in a fully depleted silicon-on-insulator p-type tunneling field-effect transistor (pTFET).
Hyun-Jin Shin, Sunil Babu Eadi, Seong-Hyun Kim, Tae-Gyu Ryu, Yeong-Jin An, Do-Woo Kim, Hi-Deok Lee, Hyuk-Min Kwon   +7 more
doaj   +1 more source

Revealing Ambipolar Charge Transport in BTBT‐Based D–A–D Molecules via Photo‐MIS‐CELIV Measurements

Advanced Electronic Materials
[1]Benzothieno[3,2‐b][1]benzothiophene (BTBT) and its tetraoxide derivative [1]benzothieno[3,2‐b]benzothiophene‐tetraoxide (BTBTOx4) are among the most interesting planar building blocks for constructing p‐type and n‐type transporting materials for ...
Salvatore Gambino, Maria Montrone, Piotr Pander, Marco Pugliese, Agostina Lina Capodilupo, Mauro Leoncini, Antonio Maggiore, Umberto Berardi, Giuseppe Gigli, Antonio Cardone, Vincenzo Maiorano   +10 more
doaj   +1 more source

Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor

Micromachines, 2020
In this paper, an investigation is performed to analyze the L-shaped tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV) with help of technology computer-aided design (TCAD) simulation.
Jang Hyun Kim, Hyun Woo Kim, Young Suh Song, Sangwan Kim, Garam Kim   +4 more
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Isomerized Conjugated Molecules as Hole‐Selective Contacts for Inverted Perovskite Solar Cells

Small Structures
Hole‐selective contacts, as a crucial component in perovskite solar cells (PSCs), have attracted significant research interest owing to their solution‐processability, high device performance, and long‐term stability.
Qingqing Liu, Ke Zhao, Lu Jin, Shaochen Zhang, Libing Yao, Qinggui Li, Jingjing Zhou, Xiaonan Wang, Yixin Luo, Yuan Tian, Caner Değer, Ilhan Yavuz, Zixuan Peng, Xuechun Sun, Jiahui Shen, Jiazhe Xu, Xu Zhang, Jingjing Xue, Rui Wang   +18 more
doaj   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors

Advanced Materials Interfaces, EarlyView.
We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei, Yimin Lei, Peixian Li, Hong Wang, Meisen Yi, Qing Zhu, Jiejie Zhu, Zhen Zhang, Yang Yang, Xiaohua Ma, Yue Hao   +10 more
wiley   +1 more source

Understanding the Role of Bulky Side Chains on Polymorphism of BTBT-Based Organic Semiconductors [PDF]

Crystal Growth & Design, 2020
Polymorphism plays a major role in organic electronics, since even the slightest change in packing can modulate electronic properties.
Hyunjoong Chung, Shanwen Chen, Bijal Patel, Guillaume Garbay, Yves H. Geerts, Ying Diao   +5 more
openaire   +1 more source

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

Nanoscale Research Letters, 2017
The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM).
Wei Li, Hongxia Liu, Shulong Wang, Shupeng Chen, Qianqiong Wang   +4 more
doaj   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source