Results 1 to 10 of about 18,840,038 (173)

Degradation Measurement and Modelling under Ageing in a 16 nm FinFET FPGA [PDF]

open access: yesMicromachines, 2023
Most of the latest generation of integrated circuits use FinFET transistors for their performance, but what about their reliability? Does the architectural evolution from planar MOSFET to FinFET transistor have any effect on the integrated circuit ...
Justin Sobas, François Marc
doaj   +3 more sources

High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale

open access: yesNanomaterials, 2023
At sub-3 nm nodes, the scaling of lateral devices represented by a fin field-effect transistor (FinFET) and gate-all-around field effect transistors (GAAFET) faces increasing technical challenges.
Zhuo Chen   +14 more
doaj   +1 more source

Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET

open access: yesApplied Sciences, 2020
The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of ...
Soohyun Kim   +9 more
doaj   +1 more source

Ultra-Low-Power FinFETs-Based TPCA-PUF Circuit for Secure IoT Devices

open access: yesSensors, 2021
Low-power and secure crypto-devices are in crucial demand for the current emerging technology of the Internet of Things (IoT). In nanometer CMOS technology, the static and dynamic power consumptions are in a very critical challenge.
Cancio Monteiro, Yasuhiro Takahashi
doaj   +1 more source

Back-End, CMOS-Compatible Ferroelectric FinFET for Synaptic Weights

open access: yesFrontiers in Electronic Materials, 2022
Building Artificial Neural Network accelerators by implementing the vector-matrix multiplication in the analog domain relies on the development of non-volatile and tunable resistances.
D. Falcone   +3 more
semanticscholar   +1 more source

Ultra-Low Power Oscillator Collapse Physical Unclonable Function Based on FinFET

open access: yesIEEE Access, 2021
The main purpose of this paper is to achieve ultra-low power Physical Unclonable Function (PUF) to meet the requirements for Internet of Things (IoT) applications.
Amin A. Zayed   +3 more
doaj   +1 more source

A 7-nm-Based 5R4W High-Timing Reliability Regfile Circuit

open access: yesIET Circuits, Devices and Systems, 2023
Register file (Regfile), as the bottleneck circuit for processor data interaction, directly determines the computing performance of the system. To address the read/write conflict and timing error problems of register heap, this paper proposes a 5R4W high-
Wanlong Zhao   +3 more
doaj   +1 more source

Ge FinFET CMOS Inverters With Improved Channel Surface Roughness by Using In-Situ ALD Digital O3 Treatment

open access: yesIEEE Journal of the Electron Devices Society, 2018
Improved electrical characteristics of CMOS inverters composed of Ge n- and p-finFETs were demonstrated by utilizing newly introduced Ge surface treatments.
M.-S. Yeh   +18 more
doaj   +1 more source

Diamond FinFET without Hydrogen Termination

open access: yesScientific Reports, 2018
In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective ...
Biqin Huang   +3 more
doaj   +1 more source

Low power area efficient self-gated flip flop: Design, implementation and analysis in emerging devices

open access: yesEngineering and Applied Science Research, 2022
This study presents a novel CMOS self-gated flip flop for low power and area efficient applications. The low power operations are achieved by deactivating the clock signal when not required in the circuit.
Owais Ahmad Shah   +2 more
doaj  

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