Results 1 to 10 of about 18,840,038 (173)
Degradation Measurement and Modelling under Ageing in a 16 nm FinFET FPGA [PDF]
Most of the latest generation of integrated circuits use FinFET transistors for their performance, but what about their reliability? Does the architectural evolution from planar MOSFET to FinFET transistor have any effect on the integrated circuit ...
Justin Sobas, François Marc
doaj +3 more sources
At sub-3 nm nodes, the scaling of lateral devices represented by a fin field-effect transistor (FinFET) and gate-all-around field effect transistors (GAAFET) faces increasing technical challenges.
Zhuo Chen +14 more
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Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET
The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of ...
Soohyun Kim +9 more
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Ultra-Low-Power FinFETs-Based TPCA-PUF Circuit for Secure IoT Devices
Low-power and secure crypto-devices are in crucial demand for the current emerging technology of the Internet of Things (IoT). In nanometer CMOS technology, the static and dynamic power consumptions are in a very critical challenge.
Cancio Monteiro, Yasuhiro Takahashi
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Back-End, CMOS-Compatible Ferroelectric FinFET for Synaptic Weights
Building Artificial Neural Network accelerators by implementing the vector-matrix multiplication in the analog domain relies on the development of non-volatile and tunable resistances.
D. Falcone +3 more
semanticscholar +1 more source
Ultra-Low Power Oscillator Collapse Physical Unclonable Function Based on FinFET
The main purpose of this paper is to achieve ultra-low power Physical Unclonable Function (PUF) to meet the requirements for Internet of Things (IoT) applications.
Amin A. Zayed +3 more
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A 7-nm-Based 5R4W High-Timing Reliability Regfile Circuit
Register file (Regfile), as the bottleneck circuit for processor data interaction, directly determines the computing performance of the system. To address the read/write conflict and timing error problems of register heap, this paper proposes a 5R4W high-
Wanlong Zhao +3 more
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Improved electrical characteristics of CMOS inverters composed of Ge n- and p-finFETs were demonstrated by utilizing newly introduced Ge surface treatments.
M.-S. Yeh +18 more
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Diamond FinFET without Hydrogen Termination
In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective ...
Biqin Huang +3 more
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This study presents a novel CMOS self-gated flip flop for low power and area efficient applications. The low power operations are achieved by deactivating the clock signal when not required in the circuit.
Owais Ahmad Shah +2 more
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