Results 1 to 10 of about 562 (143)

Carrier Mapping in Sub-2nm Node Nanosheet Transistors with Scanning Spreading Resistance Microscopy. [PDF]

Small Methods
Within this work, advancements in scanning spreading resistance microscopy (SSRM) allow charge carrier mapping within 5.5 nm‐thick nanosheet channels. Devices subjected to rapid thermal annealing at 950°C show ∼ 5 nm enhanced phosphorus diffusion, with profiles in close agreement with semi‐atomistic process simulations.
Pondini A, Eyben P, Wouters L, Minj A, Hantschel T, Matagne P, Mitard J, Verhulst A.   +7 more
europepmc   +2 more sources

Remarkably High Effective Mobility of 301 cm²/V·s in 3 nm Ultra-Thin-Body SnO₂ Transistor by UV Annealing. [PDF]

Nanomaterials (Basel)
Shih AC, Zhan YH, Chin A.
europepmc   +1 more source

Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications. [PDF]

Micromachines (Basel)
Karimi K, Fardoost A, Javanmard M.
europepmc   +1 more source

Effect of C₂H₂F₄/CF₄O with low global warming potentials on SiN_x etching as a CHF₃ replacement. [PDF]

Sci Rep
Kim KL, Hong JW, Jeon YW, Jeong JW, Kim CH, Eoh HJ, Kim SH, Park JS, Cho NI, Kwak JH, Kim Y, Yeom GY.   +11 more
europepmc   +1 more source

Epitaxial Mixed-Dimensional MoS₂ Nanofin-Nanoribbon Hybrids and Their Integration into Electronic and Optoelectronic Devices. [PDF]

ACS Appl Mater Interfaces
Danieli Y, Houben L, Rechav K, Brontvein O, Kaplan-Ashiri I, Pinkas I, Vilan A, Joselevich E.   +7 more
europepmc   +1 more source

An Overview of Hot Carrier Degradation on Gate-All-Around Nanosheet Transistors. [PDF]

Micromachines (Basel)
Zhou H.
europepmc   +1 more source

Sub-THz communication systems: pushing the capabilities of silicon. [PDF]

Commun Eng
Gruber J, Alotaibi H, Tabatabavakili A, Chen L, Aghasi H, Naghavi SMH, Afshari E.   +6 more
europepmc   +1 more source

Design and analysis of high-k wrapped underlap induced GaN multi-channel GAA nanosheet FET for enhanced performance with cut-off frequency in THz range. [PDF]

Sci Rep
Singh S, Dhar RS, Banerjee A, Gupta V.
europepmc   +1 more source

Highly Selective Isotropic Etching of Si to SiGe Using CF₄/O₂/N₂ Plasma for Advanced GAA Nanosheet Transistor. [PDF]

Nanomaterials (Basel)
Li J, Sun X, Huang Z, Zhang DW.
europepmc   +1 more source

Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices. [PDF]

Micromachines (Basel)
Yu H, Zhou W, Liu H, Wang S, Chen S, Liu C.   +5 more
europepmc   +1 more source