Dual-directional CIM-based non-volatile SRAM for instant-on/off energy-constrained edge AI devices. [PDF]
Sci RepHemmasi SP +3 more
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High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area. [PDF]
Sci RepOh K +8 more
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Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System. [PDF]
Nanomaterials (Basel), 2023 Nanda S, Dhar RS, Awwad F, Hussein MI.
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Remarkably High Effective Mobility of 301 cm2/V·s in 3 nm Ultra-Thin-Body SnO2 Transistor by UV Annealing. [PDF]
Nanomaterials (Basel)Shih AC, Zhan YH, Chin A.
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Single event response of ferroelectric spacer engineered SOI FinFET at 14 nm technology node. [PDF]
Sci Rep, 2023 Liu B, Zhu J.
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Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel. [PDF]
Micromachines (Basel)Yugender P +5 more
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Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications. [PDF]
Micromachines (Basel)Karimi K, Fardoost A, Javanmard M.
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Effect of C<sub>2</sub>H<sub>2</sub>F<sub>4</sub>/CF<sub>4</sub>O with low global warming potentials on SiN<sub>x</sub> etching as a CHF<sub>3</sub> replacement. [PDF]
Sci RepKim KL +11 more
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Epitaxial Mixed-Dimensional MoS<sub>2</sub> Nanofin-Nanoribbon Hybrids and Their Integration into Electronic and Optoelectronic Devices. [PDF]
ACS Appl Mater InterfacesDanieli Y +7 more
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An Overview of Hot Carrier Degradation on Gate-All-Around Nanosheet Transistors. [PDF]
Micromachines (Basel)Zhou H.
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