Results 91 to 100 of about 562 (143)

Structurally optimized SiC CMOS FinFET for high-temperature and low-power SoC logic integration. [PDF]

Sci Rep
Kwon TS, Yoon YJ, Park DY, Bae JH, Song YS, Kim HW, Seo JH, Woo SY.   +7 more
europepmc   +1 more source

3-Levels Vertically Stacked Si Nanosheet GAA pFETs with Low-Temperature Interface Treatment for Cryogenic Application. [PDF]

Nanomaterials (Basel)
Qian L, Liu T, Liao M, Guo X, Xu S, Xu M, Zhang DW.   +6 more
europepmc   +1 more source

High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET. [PDF]

Nanomaterials (Basel), 2023
Yao YJ, Yang CR, Tseng TY, Chang HJ, Lin TJ, Luo GL, Hou FJ, Wu YC, Chang-Liao KS.   +8 more
europepmc   +1 more source

From Field Effect Transistors to Spin Qubits: Focus on Group IV Materials, Architectures and Fabrications. [PDF]

Nanomaterials (Basel)
Petkov N, Fagas G.
europepmc   +1 more source

Design of low power and high speed approximate multipliers utilizing current mode 4 to 2 compressors based on CNTFET technology. [PDF]

Sci Rep
Foroutan P, Navi K.
europepmc   +1 more source

ELECTRICAL PROPERTIES OF FINFET STRUCTURES

, 2007
A. N. Nazarov, D. Flandre, M. Jurczak, N. Collaert, T. E. Rudenko, V. I. Kilchytska, V. S. Lysenko   +6 more
core   +1 more source

Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal Effects. [PDF]

Nanomaterials (Basel)
Yugender P, Singh S, Kumar K, Dhar RS, Seteikin AY, Banerjee A, Samusev IG.   +6 more
europepmc   +1 more source

Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. [PDF]

Sci Rep
Severin B, Lennon DT, Camenzind LC, Vigneau F, Fedele F, Jirovec D, Ballabio A, Chrastina D, Isella G, de Kruijf M, Carballido MJ, Svab S, Kuhlmann AV, Geyer S, Froning FNM, Moon H, Osborne MA, Sejdinovic D, Katsaros G, Zumbühl DM, Briggs GAD, Ares N.   +21 more
europepmc   +2 more sources

High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area. [PDF]

Sci Rep
Oh K, Kim H, Kim Y, Yoo H, Choi M, Maeng W, Kim S, Lee HJ, Baek CK.   +8 more
europepmc   +1 more source

Dual-directional CIM-based non-volatile SRAM for instant-on/off energy-constrained edge AI devices. [PDF]

Sci Rep
Hemmasi SP, Moaiyeri MH, Eslami N, Ebrahimi B.   +3 more
europepmc   +1 more source