Results 31 to 40 of about 18,840,038 (173)

Silicon- and Graphene-based FETs for THz technology [PDF]

, 2019
[EN] This Thesis focuses on the study of the response to Terahertz (THz) electromagnetic radiation of different silicon substrate-compatible FETs. Strained-Si MODFETs, state-of- the-art FinFETs and graphene-FETs were studied.
Delgado Notario, Juan Antonio
core   +2 more sources

Engineered Strain in 2D Materials by Direct Growth on Deterministically Patterned Grayscale Topographies

Advanced Science, EarlyView.
ABSTRACT Strain is a proven technique for modifying the bandgap and enhancing carrier mobility in 2D materials. Most current strain engineering techniques rely on the post‐growth transfer of these atomically thin materials from growth substrates to target surfaces, limiting their integration into nanoelectronics.
Berke Erbas, Arindam Bala, Hernan Furci, Anushree Dutta, Naresh Kumar, Renato Zenobi, Giovanni Boero, Andras Kis, Juergen Brugger   +8 more
wiley   +1 more source

High Performance Electronics on Flexible Silicon [PDF]

, 2016
Over the last few years, flexible electronic systems have gained increased attention from researchers around the world because of their potential to create new applications such as flexible displays, flexible energy harvesters, artificial skin, and ...
Sevilla, Galo T.
core   +1 more source

Machine Learning‐Based Standard Compact Model Binning Parameter Extraction Methodology for Integrated Circuit Design of Next‐Generation Semiconductor Devices

Advanced Intelligent Systems, EarlyView.
This study presents a neural network‐based methodology for Berkeley Short‐Channel IGFET Model–Common Multi‐Gate parameter extraction of gate‐all‐around field effect transistors, integrating binning adaptive sampling and transformer neural networks to efficiently capture current–voltage and capacitance–voltage characteristics.
Jaeweon Kang, Johyeon Kim, Sueyeon Kim, Hyunbo Cho, Jongwook Jeon   +4 more
wiley   +1 more source

Design and investigation of a delay controlled ALU employing FinFET& CNTFET technologies

e-Prime: Advances in Electrical Engineering, Electronics and Energy
The Arithmetic and Logic Unit (ALU) is a crucial logical element of real-time semiconductor devices. Conventional ALUs that are built using Complementary Metal Oxide Semiconductor (CMOS) technology exhibit increased power usage and processing delays ...
Ch JayaPrakash, Ashok Battula, SurendraBabu Velagaleti   +2 more
doaj   +1 more source

Fully CMOS‐Compatible 3‐T Embedded NOR Flash Memory Achieving 28 ns Long‐Term Potentiation/Long‐Term Depression for High‐Speed Online Training Accelerators

Advanced Intelligent Systems, EarlyView.
A fully complementary metal–oxide–semiconductor process‐compatible novel 3‐T embedded NOR flash is demonstrated on a 28 nm fully depleted silicon‐on‐insulator platform. The proposed memory achieves record‐fast 28‐long‐term potentiation and depression , offering high‐speed and highly reliable synaptic behavior for online training in neuromorphic ...
Jae Seung Woo, Kyoung Min Choi, Geun Tae Park, Jin Ho Chang, Woo Young Choi   +4 more
wiley   +1 more source

CMOS λογική οικογένεια με χρήση διοδικού τρανζίστορ με χαμηλή δυναμική κατανάλωση ενέργειας [PDF]

, 2012
165 ...
Κατσαρού, Αικατερίνη
core   +1 more source

Ternary Content‐Addressable Memory Using One Capacitor and One Nanoelectromechanical Memory Switch for Data‐Intensive Applications

Advanced Intelligent Systems, EarlyView.
A charge‐domain ternary content‐addressable memory using one capacitor one nanoelectromechanical memory switch (1C‐1N TCAM) is proposed for energy‐efficient, high‐reliability computations. Integrated with the back‐end‐of‐line process, the 1C‐1N TCAM leverages the air gap capacitance to achieve a high capacitance ratio and ternary functionality.
Jin Wook Lee, Changha Kim, Geun Tae Park, Seung Hun Baek, Myeong Su Shin, Woo Young Choi   +5 more
wiley   +1 more source

Hybrid Convolutional Neural Network‐Analytical Model for Prediction of Line Edge Roughness‐Induced Performance Variations in Fin‐Shaped Field‐Effect Transistor Devices and SRAM

Advanced Intelligent Systems, EarlyView.
This work presents a hybrid model for predicting the electrical characteristics of fin‐shaped field‐effect transistor devices and SRAM with line edge roughness. The model consists of a convolutional neural network (CNN) and an analytical model that simulates the electrical characteristics of transistors using the outputs of CNN, enabling fast and ...
Jaehyuk Lim, Myongjin Kim, Changwoo Han, Hyoung Won Baac, Changhwan Shin   +4 more
wiley   +1 more source

III-V Nanowire MOSFET High-Frequency Technology Platform [PDF]

, 2021
This thesis addresses the main challenges in using III-V nanowireMOSFETs for high-frequency applications by building a III-Vvertical nanowire MOSFET technology library.
Andric, Stefan
core