Results 31 to 40 of about 562 (143)
IEEE Journal of the Electron Devices Society, 2015 This paper presents the results of a systematic theoretical investigation on the impact of gate height on the analog and radio-frequency (RF) performances of underlap-FinFET devices.
Sayani Ghosh +3 more
doaj +1 more source
Review on suitable eDRAM configurations for next nano-metric electronics era [PDF]
, 2018 We summarize most of our studies focused on the main reliability issues that can threat the gain-cells eDRAM behavior when it is simulated at the nano-metric device range has been collected in this review. So, to outperform their memory cell counterparts,
Amat, Esteve +3 more
core +3 more sources
Silicon-Based Micromachining Process for Flexible Electronics [PDF]
, 2019 In this chapter, we introduce silicon-based micromachining process and devices for flexible electronics application. Silicon-based flexible electronics have the unique advantage over other polymer-based process that leverage the traditional standard CMOS
Wu, Tao, Yang, Jiye
core +2 more sources
Benchmarking the screen-grid field effect transistor (SGrFET) for digital applications
, 2010 Continuous scaling of CMOS technology has now reached a state of evolution, therefore, novel device structures and new materials have been proposed for this purpose.
Shadrokh, Yasaman, Shadrokh, Yasaman
core +1 more source
Memories - Materials, Devices, Circuits and SystemsIn this work, a high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs–SOI–FinFET) is presented for high-switching and ultra-low power applications at 7 nm gate length.
Priyanka Agrwal, Ajay Kumar
doaj +1 more source
High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
AIP Advances, 2014 Two high-k dielectric materials (Al2O3 and HfO2) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (Dit).
C. H. Wang +18 more
doaj +1 more source
Out-of-Equilibrium Carrier Dynamics in Graphene and Graphene-based Devices for High-Performance Electronics [PDF]
, 2019 [ES]Con los límites tecnológicos de las tecnologías de semiconductores tradicionales alcanzando los límites de escalado y integración en chip, el descubrimiento del grafeno y sus impresionantes propiedades supuso una prometedora alternativa para el ...
Iglesias Pérez, José Manuel
core +2 more sources
Silicon- and Graphene-based FETs for THz technology [PDF]
, 2019 [EN] This Thesis focuses on the study of the response to Terahertz (THz) electromagnetic radiation of different silicon substrate-compatible FETs. Strained-Si MODFETs, state-of- the-art FinFETs and graphene-FETs were studied.
Delgado Notario, Juan Antonio
core +2 more sources
Advanced Materials, EarlyView.Enhancement‐mode monolayer MoS2 FETs with low threshold voltage are essential for low‐power electronics. The threshold voltage can be tuned by the gate metal work function when the semiconductor/dielectric interface is clean. Interfaces between monolayer MoS2 and ZrO2 or hBN allow effective work‐function modulation of the threshold voltage, in contrast
Lixin Liu +10 more
wiley +1 more source
High Performance Electronics on Flexible Silicon [PDF]
, 2016 Over the last few years, flexible electronic systems have gained increased attention from researchers around the world because of their potential to create new applications such as flexible displays, flexible energy harvesters, artificial skin, and ...
Sevilla, Galo T.
core +1 more source