Results 51 to 60 of about 18,840,038 (173)

Design of 3C-SiC/Si vertical MOSFET [PDF]

, 2015
Metal-Oxide-Semiconductor Field Effect transistor (MOSFET) has undergone scaling to improve performance, and it is presently at the sub-100nm technology node.
Reddy Veesam, Vamshi Vardhan
core   +1 more source

Neuromorphic Device Based on Material and Device Innovation toward Multimode and Multifunction

Advanced Intelligent Systems, Volume 8, Issue 1, January 2026.
In the era of big data, multimodal and multifunctional neuromorphic devices offer significant opportunities in designing AI hardware. In this work, recent advances about emerging material systems and novel device structures in this field are summarized in detail. Potential applications are reviewed.
Feng Guo, Hongda Ren, Yang Zhang, Jianhua Hao   +3 more
wiley   +1 more source

A Comprehensive Study of Quantum Transport Effects on Graphene Nanoribbon Field‐Effect Transistors (GNRFET)

Micro &Nano Letters, Volume 21, Issue 1, January/December 2026.
This study presents a numerical quantum transport analysis of graphene nanoribbon field‐effect transistors (GNRFETs) using the non‐equilibrium Green's function (NEGF) formalism. The results show that reducing the channel length and optimizing dielectric materials, such as HfSiO4, significantly enhance ON‐state current and the Ion/Ioff ratio.
Mahamudul Hassan Fuad
wiley   +1 more source

Design of low delay low power hybrid logic based flip-flop using FinFET

e-Prime: Advances in Electrical Engineering, Electronics and Energy
The need for a low-power and high-speed technology for computation of digital signals is rising due to the fast growth of technological innovations. Flip-flops serve as fundamental elements in signal processing technologies.
Syed Sadiq Vali, Ashok kumar N
doaj   +1 more source

Advancing the Frontiers of HfO2‐Based Ferroelectric Memories: Innovative Concepts from Materials to Applications

Advanced Materials, Volume 37, Issue 50, December 17, 2025.
HfO2‐based ferroelectric materials are promising for next‐generation memory technologies by providing outstanding performance aligning with data‐centric computing needs. This review details recent advancements in materials, devices, and integration for HfO2‐based memories, with the goal of identifying both the technological opportunities and remaining ...
Zuopu Zhou, Lingqi Li, Yang Feng, Xiaolin Wang, Zijie Zheng, Leming Jiao, Haofei Zheng, Yufei Shi, Kah‐Wee Ang, Xiao Gong   +9 more
wiley   +1 more source

Simulating Scaling Effects in Fully Vertical GaN FinFETs

physica status solidi (a), Volume 222, Issue 23, December 2025.
Vertical GaN‐on‐GaN unipolar FinFETs have been analyzed and optimized using TCAD modeling. Simulations varying the device dimensions—fin width, height, spacing, and drift layer thickness—have been done. Device designs which optimize the Baliga's figure of merit, breakdown voltage, and switching losses are presented.
Alexander Simko, Navya Sri Garigapati, Adamantia Logotheti, Vanya Darakchieva, Erik Lind   +4 more
wiley   +1 more source

3나노 노드 소자에서 기들 측면의 스페이서 최적화 [PDF]

, 2019
학위논문(석사)--서울대학교 대학원 :공과대학 전기·정보공학부,2019. 8. 신형철.본 논문에서는 오프 상태 누설 전류의 관점에서 게이트 측벽 스페이서의 구조 및 물질 최적화를 3nm 노드 나노 플레이트 소자에서 수행했다. 첫째, 게이트 누설 전류의 주 요인 인 기들 (GIDL) 전류와 능동 성능 (온 전류, 온 / 오프 전류 비)가 게이트 측벽 스페이서와 게이트 및 소스.드레인과의 구조적 상관 관계에 따라 공동 최적화되었다.
류동현
core  

Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors

Small Science, Volume 5, Issue 12, December 2025.
This article reports a multiscale investigation of monolayer MoS2 field‐effect transistors, revealing a source/drain Schottky barrier of ≈0.21 eV and contact‐induced strain variations inside the channel. The impact of strain inhomogeneities on the electron effective mass (meff) distribution and their implications on carrier mobility and contact ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Marilena Vivona, Salvatore Di Franco, Fabrizio Roccaforte, Fiorenza Esposito, Matteo Bosi, Giovanni Attolini, Igor Píš, Federica Bondino, Maddalena Pedio, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +17 more
wiley   +1 more source

One Dimensional Metal Oxide Semiconductor Nanotransistors

Advanced Materials Technologies, Volume 10, Issue 21, November 6, 2025.
This review assesses one dimensional metal oxide NW‐FETs as promising alternatives to conventional transistors. It explores how advances in architecture, material composition, and fabrication processes expand device capabilities. Emphasis is placed on novel gate configurations, different metal oxide nanowires, and post‐treatment methods, which ...
Mariana D. Cortinhal, Ana I. B. Rovisco, Pedro M. C. Barquinha   +2 more
wiley   +1 more source

Process Integration of U‐Shape Ambipolar Schottky–Barrier Field‐Effect Transistors

Advanced Electronic Materials, Volume 11, Issue 18, November 4, 2025.
We demonstrate a U‐shape ambipolar Schottky barrier field‐effect transistor fabricated on silicon‐on‐insulator substrate. The geometry naturally enables gate‐all‐around operation and long channel lengths within a compact footprint, while simplifying self‐aligned contact formation compared to conventional 3D architectures. The current device is realized
Cigdem Cakirlar, Bruno Neckel Wesling, Konstantinos Moustakas, Giulio Galderisi, Sylvain Pelloquin, Oskar Baumgartner, Mischa Thesberg, Thomas Mikolajick, Guilhem Larrieu, Jens Trommer   +9 more
wiley   +1 more source