Results 61 to 70 of about 562 (143)
Design of low delay low power hybrid logic based flip-flop using FinFET
e-Prime: Advances in Electrical Engineering, Electronics and EnergyThe need for a low-power and high-speed technology for computation of digital signals is rising due to the fast growth of technological innovations. Flip-flops serve as fundamental elements in signal processing technologies.
Syed Sadiq Vali, Ashok kumar N
doaj +1 more source
3나노 노드 소자에서 기들 측면의 스페이서 최적화 [PDF]
, 2019 학위논문(석사)--서울대학교 대학원 :공과대학 전기·정보공학부,2019. 8. 신형철.본 논문에서는 오프 상태 누설 전류의 관점에서 게이트 측벽 스페이서의 구조 및 물질 최적화를 3nm 노드 나노 플레이트 소자에서 수행했다. 첫째, 게이트 누설 전류의 주 요인 인 기들 (GIDL) 전류와 능동 성능 (온 전류, 온 / 오프 전류 비)가 게이트 측벽 스페이서와 게이트 및 소스.드레인과의 구조적 상관 관계에 따라 공동 최적화되었다.
류동현
core
Advanced Intelligent Systems, Volume 8, Issue 2, February 2026.A fully complementary metal–oxide–semiconductor process‐compatible novel 3‐T embedded NOR flash is demonstrated on a 28 nm fully depleted silicon‐on‐insulator platform. The proposed memory achieves record‐fast 28‐long‐term potentiation and depression , offering high‐speed and highly reliable synaptic behavior for online training in neuromorphic ...
Jae Seung Woo +4 more
wiley +1 more source
InfoMat, Volume 8, Issue 2, February 2026.Two‐dimensional MA2Z4 such as MoSi2N4 offer a new path to extend transistor scaling beyond the limits of silicon. Due to their exceptional properties, these 2D semiconductors are promising candidates for future Ångström‐scale CMOS technology. This review outlines the computational design and roadmap bridging materials discovery, device design and ...
Che Chen Tho +11 more
wiley +1 more source
Small Structures, Volume 7, Issue 2, February 2026.We present a unified analytic framework linking subthreshold and above‐threshold conduction in oxide field‐effect transistors by decomposing the drain current into band transport, tail‐state percolation, and interface‐trap diffusion components. Parameter correlation and identifiability analyses enable robust extraction of physical metrics, yielding ...
Mochamad Januar +3 more
wiley +1 more source
Ultra‐Fast, Low‐Resistance Nano Gap Electromechanical Switch for Power Gating Applications
Advanced Electronic Materials, Volume 12, Issue 2, 21 January 2026.An ultra‐small 20 nm air gap and a high‐stiffness architecture enable a MEMS power‐gating switch that combines 0.95 Ω on‐resistance with 30 ns switching while maintaining off‐state leakage below 100 fA. Fabricated below 200 °C, the device is compatible with BEOL and monolithic 3D integration, overcoming the long‐standing resistance–speed trade‐off ...
Tae‐Soo Kim +5 more
wiley +1 more source
Kolmogorov–Arnold Network for Transistor Compact Modeling
Advanced Intelligent Systems, Volume 8, Issue 1, January 2026.This work introduces Kolmogorov–Arnold network (KAN) for the transistor—an architecture that integrates interpretability with high precision in physics‐based function modeling. The results reveal that despite achieving superior prediction accuracy for critical figures of merit, KAN demonstrates unique inherent challenges for transistor modeling ...
Rodion Novkin, Hussam Amrouch
wiley +1 more source
Some Studies on Si-nanotube Based FETs [PDF]
, 2015 Silicon-nano-tube (SiNT) MOSFETs have been analyzed recently in order to investigate their suitability for future ultra-large scale integration (ULSI) applications.
Kumar, Mukesh
core
Doping of group IV semiconductor nanowires [PDF]
, 2020 As Moore’s Law predicted in the 1960s, advancements in technology have led to an exponential increase in the numbers of transistors required per square inch of integrated circuits, leading to an ever pressing need for smaller transistors. In turn, there
Game, Alexander
core
Neuromorphic Device Based on Material and Device Innovation toward Multimode and Multifunction
Advanced Intelligent Systems, Volume 8, Issue 1, January 2026.In the era of big data, multimodal and multifunctional neuromorphic devices offer significant opportunities in designing AI hardware. In this work, recent advances about emerging material systems and novel device structures in this field are summarized in detail. Potential applications are reviewed.
Feng Guo +3 more
wiley +1 more source