Results 171 to 180 of about 28,292 (242)

X-ray and γ-ray Sensing from Aqueous-Based Lead Sulfide Telluride Nanocomposites. [PDF]

Small
Le VD, Vecchio DA, Uyulur AD, Han IH, Ursu AM, Kim G, Hammig MD.   +6 more
europepmc   +1 more source

Neuroimaging with photon-counting computed tomography: A review of clinical applications. [PDF]

World J Radiol
Perera Molligoda Arachchige AS, Alves GAM, Fedorov D, Ressa G, Cappellini L, Levi R, Savini G, Catapano F, Francone M, Politi LS.   +9 more
europepmc   +1 more source

Role of anthropogenic mineral circularity in addressing dual challenges of resource supply and waste management in global photovoltaic development. [PDF]

Nat Commun
Yuan X, Song Q, Liu Y, Huang M, Wang Y, Xu Z.   +5 more
europepmc   +1 more source

Risk Factors Influencing Right and Left Ventricular Variables Assessed with Gated Cadmium-Zinc-Telluride Equilibrium Radionuclide Angiocardiography in Oncology Patients. [PDF]

Diagnostics (Basel)
Monsson O, Nielsen M, Kümler T, Haarmark C, Zerahn B.   +4 more
europepmc   +1 more source

Nanoelectronics: Materials, Devices, and Applications (Second Edition). [PDF]

Nanomaterials (Basel)
Wang C.
europepmc   +1 more source

Aqueous Continuous Flow Synthesis of Cadmium Chalcogenide Quantum Dots: Opportunities and Challenges. [PDF]

JACS Au
Campalani C, Petit G, Monbaliu JM.
europepmc   +1 more source

Investigation of inter-source and intra-source spectral variations in an electronic brachytherapy source using spectral measurements and Monte Carlo simulations. [PDF]

Med Phys
Esmaelbeigi A, Tomic N, Kalinowski J, Watson PGF, Rivard MJ, Devic S, Enger SA.   +6 more
europepmc   +1 more source

Adsorption on cadmium telluride and mercury telluride surfaces

, 1989
openaire   +2 more sources

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Mercury Cadmium Telluride/Cadmium Telluride Distributed Bragg Reflectors

Conference on Optoelectronic and Microelectronic Materials and Devices, 2004., 2006
A HgCdTe/CdTe system is investigated for use in distributed Bragg reflectors. The modelled performance is described, and compared to an as-grown structure. As-grown 15 layer structures with arithmetically varying layer thickness are also annealed at 250°C and performance re-evaluated at 2, 7 and 24 hours anneal times.
J.G.A. Wehner, R.H. Sewell, J. Antoszewski, C.A. Musca, J.M. Dell, L. Faraone   +5 more
openaire   +1 more source

Semiconducting Cadmium Telluride

Physical Review, 1954
Both $n$-type and $p$-type conductivity can be obtained in cadmium telluride. The intrinsic band gap of cadmium telluride is 1.45 ev. Electron and hole mobilities are at least 30 ${\mathrm{cm}}^{2}$/volt sec. The activation energies of $p$-type impurities are much larger than those of $n$-type impurities in cadmium telluride, indicating an explanation ...
Dietrich A. Jenny, Richard H. Bube
openaire   +1 more source