Results 61 to 70 of about 10,343 (214)
Advanced Sensor Research, Volume 4, Issue 8, August 2025.SARS‐CoV‐2 particles in complex cell culture medium are detected using high‐frequency electrical measurements. This is made possible through the use of large arrays of independently addressable nanoelectrodes implemented using complementary metal oxide semiconductor (CMOS), semiconductor technology.
Suryasnata Tripathy +7 more
wiley +1 more source
Systematic Comparison of HF CMOS Transconductors [PDF]
, 2003 Transconductors are commonly used as active elements in high-frequency (HF) filters, amplifiers, mixers, and oscillators. This paper reviews transconductor design by focusing on the V-I kernel that determines the key transconductor properties.
Klumperink, Eric A.M., Nauta, Bram
core +7 more sources
Energies, 2021 The conventional cascode structure for driving depletion-mode (D-mode) gallium nitride (GaN) high electron mobility transistors (HEMTs) raises reliability concerns.
Chih-Chiang Wu +5 more
doaj +1 more source
Low-Voltage Ultra-Low-Power Current Conveyor Based on Quasi-Floating Gate Transistors [PDF]
, 2012 The field of low-voltage low-power CMOS technology has grown rapidly in recent years; it is an essential prerequisite particularly for portable electronic equipment and implantable medical devices due to its influence on battery lifetime.
Khateb, F., Khatib, N., Kubanek, D.
core +1 more source
A 5.3mW, 2.4GHz ESD protected Low-Noise Amplifier in a 0.13μm RFCMOS technology [PDF]
, 2007 An Electrostatic Discharge (ESD) protected Low- Noise Amplifier (LNA) for the 2.4 GHz ISM band designed in a 0.13 mum standard RFCMOS technology is presented. The amplifier, including packaging effects, achieves 16.8 dB power gain, reflexion coefficients
Brandano, Davide +3 more
core +1 more source
physica status solidi (a), Volume 222, Issue 3, February 2025.An AlGaN/GaN lateral diode with the Schottky‐metal‐insulator‐semiconductor cascode anode (CALD) is proposed to optimize forward voltage drop (VF) and reverse leakage current (ILEAK) trade‐off. The fabricated CALD presents a low VF of 1.6 V and a low ILEAK of 5.2 × 10−8 A mm−1 (at reverse voltage of 400 V), suggesting an optimized VF‐ILEAK trade‐off ...
Fangzhou Wang +14 more
wiley +1 more source
IET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.Physically unclonable function‐based authentication is one of the widely accepted and promising hardware security primitives. For security applications, strong PUF circuits can generate a large number of challenge–response pairs (CRPs) for authentication.
Gisha Chittattukara Girijan +5 more
wiley +1 more source
A Folded Cascode CMOS Low Noise Amplifier with Transformer Feedback [PDF]
Journal of Electromagnetic Engineering and ScienceThis study proposes a folded cascode CMOS low noise amplifier (LNA) with transformer feedback, implemented using a 0.13-μm CMOS process for wireless local area network front-end module applications.
Dongmyeong Kim +3 more
doaj +1 more source
Electronics Letters, 2023 The dynamic on‐state resistance instability of a high‐current cascode multi‐GaN‐chip power module under high frequency and voltage switching conditions is demonstrated in this paper.
Surya Elangovan +3 more
doaj +1 more source
A low power 2 x 28 Gb/s electroabsorption modulator driver array with on-chip duobinary encoding [PDF]
, 2014 An integrated 2 x 28 Gb/s dual-channel duobinary driver IC is presented. Each channel has integrated coding blocks, transforming a non-return-to-zero input signal into a 3-level electrical duobinary signal to achieve an optical duobinary modulation.
Bauwelinck, Johan +6 more
core +2 more sources