Results 241 to 250 of about 1,327,189 (298)
Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh +9 more
wiley +1 more source
Poly(Alkoxythiophene) Rod‐Coil Block Copolymers for Organic Electrochemical Transistors
We present the first synthesis of poly(3‐alkoxythiophene) rod‐coil block copolymers as a new architecture for OMIECs. Incorporating PEG and PLLA coils can enhance device performance beyond the homopolymer. The figure‐of‐merit depends uniquely on coil length.
Junfu Tian +23 more
wiley +1 more source
Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics
Conductive MOF thin films are integrated as gate electrodes in semiconductor devices through a photolithography‐compatible patterning strategy. CVD‐grown 2D MOF thin films enable stable operation across bottom‐gate MoS2/MoTe2 field‐effect transistors and top‐gate IGZO arrays, highlighting the potential of conductive MOFs as functional electronic ...
Hyeonwoo Lee +9 more
wiley +1 more source
Controlled Growth of Boron Nitride in Various Phases
Phase‐selective boron nitride growth is presented as a unified materials‐design problem across hexagonal, rhombohedral, cubic, and amorphous phases. By linking synthesis routes to thermodynamic stability, kinetic accessibility, surface diffusion, interfacial templating, and energetic activation, this review clarifies how bonding and stacking are ...
Pan Wu +6 more
wiley +1 more source
Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley +1 more source
Gate‐Induced Critical Current Modulation in W–C Nanowires: The Role of Fabrication
Focused ion beam induced deposition (FIBID) enables precise control of superconducting W–C nanowire devices. Introducing a Ga+ focused ion beam (FIB) cleaning step reduces substrate damage and suppresses leakage currents, shifting gating thresholds to higher voltages.
Alba Arroyo‐Fructuoso +2 more
wiley +1 more source
Dynamic coupling of fast channel gating with slow ATP-turnover underpins protein transport through the Sec translocon. [PDF]
Crossley JA +7 more
europepmc +1 more source
Aerosol Jet Printing (AJP) has emerged as a versatile additive manufacturing technique for high‐resolution, conformal, and multi‐material printing. This review highlights advances in printable materials, substrate compatibility, post‐processing, characterization, and process innovations, while critically discussing current challenges and future ...
Chandrachur Chatterjee +2 more
wiley +1 more source

